- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Backside-illuminated CMOS Photodiodes with Embedded Polysilicon Grating Reflectors
摘要： In this study, we investigated the feasibility of replacing metal mirrors with polysilicon gratings to serve as compact optical back reflectors in thin backside-illuminated CMOS photodiodes (BSI CPDs). The unique reflective properties of polysilicon grating reflectors can be implemented within a very small area (12 μm2); i.e., between the contact vias of BSI CPDs. The proposed scheme achieves high optical reflectivity for TE-polarized light at wavelengths exceeding 100 nm, while improving responsivity at near-infrared wavelengths. The resulting BSI CPDs were shown to enhance photocurrent by 1.45x in a polarization-dependent manner (ITE/ITM =1.148) at a wavelength of 980 nm.
关键词： complementary metal oxide semiconductor (CMOS),backside-illuminated photodiode,polysilicon grating reflector
更新于2025-09-23 15:22:29
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92.5% Average Power Efficiency Fully Integrated Floating Buck Quasi-Resonant LED Drivers Using GaN FETs
摘要： LEDs are highly energy ef?cient and have substantially longer lifetimes compared to other existing lighting technologies. In order to facilitate the new generation of LED devices, approaches to improve power ef?ciency with increased integration level for lighting device should be analysed. This paper proposes a fully on-chip integrated LED driver design implemented using heterogeneous integration of gallium nitride (GaN) devices atop BCD circuits. The performance of the proposed design is then compared with the conventional fully on-board integration of power devices with the LED driver integrated circuit (IC). The experimental results con?rm that the fully on-chip integrated LED driver achieves a consistently higher power ef?ciency value compared with the fully on-board design within the input voltage range of 4.5–5.5 V. The maximal percentage improvement in the ef?ciency of the on-chip solution compared with the on-board solution is 18%.
关键词： fully on-chip,gallium nitride (GaN),?oating buck converter,complementary-metal-oxide-semiconductor (CMOS),quasi resonance,integrated LED driver,heterogeneous integration
更新于2025-09-23 15:21:01
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[IEEE 2018 IEEE Photonics Conference (IPC) - Reston, VA, USA (2018.9.30-2018.10.4)] 2018 IEEE Photonics Conference (IPC) - Crack-Free Silicon-Nitride-on-Insulator Nonlinear Circuits for Continuum Generation in the C-Band
摘要： We report on the fabrication and testing of silicon-nitride-on-insulator nonlinear photonic circuits for complementary metal–oxide–semiconductor (CMOS) compatible monolithic co-integration with silicon-based optoelectronics. In particular, a process has been developed to fabricate low-loss crack-free Si3N4 730-nm-thick ?lms for Kerr-based nonlinear functions featuring full process compatibility with existing silicon photonics and front-end Si optoelectronics. Experimental evidence shows that 2.1-cm-long nanowires based on such crack-free silicon nitride ?lms are capable of generating a frequency continuum spanning 1515–1575 nm via self-phase modulation. This work paves the way to time-stable power-ef?cient Kerr-based broad-band sources featuring full process compatibility with Si photonic integrated circuits on CMOS lines.
关键词： frequency continuum,photonic integrated circuits (PICs),Complementary metal–oxide–semiconductor (CMOS),nonlinear optics,silicon-nitride-on-insulator (SiNOI)
更新于2025-09-23 15:21:01
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[IEEE 2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) - Xiamen, China (2019.12.17-2019.12.20)] 2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) - Plasmonic Band-pass/stop Filters Based on Metal-Insulator-Metal Slit Waveguides
摘要： Nanoelectronics comprises a variety of devices whose electrical properties are more complex as compared to CMOS, thus enabling new computational paradigms. The potentially large space for innovation has to be explored in the search for technologies that can support large-scale and high-performance circuit design. Within this space, we analyze a set of emerging technologies characterized by a similar computational abstraction at the design level, i.e., a binary comparator or a majority voter. We demonstrate that new logic synthesis techniques, natively supporting this abstraction, are the technology enablers. We describe models and data-structures for logic design using emerging technologies and we show results of applying new synthesis algorithms and tools. We conclude that new logic synthesis methods are required to both evaluate emerging technologies and to achieve the best results in terms of area, power and performance.
关键词： logic expressive power,nanotechnology,emerging devices,enhanced functionality,CMOS,Beyond-complementary metal-oxide semiconductor (CMOS),CAD for nanotechnology,logic synthesis
更新于2025-09-19 17:13:59
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[IEEE 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Rome, Italy (2019.6.17-2019.6.20)] 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Graphene Based Tunnel Field Effect Transistor for RF Applications
摘要： Nanoelectronics comprises a variety of devices whose electrical properties are more complex as compared to CMOS, thus enabling new computational paradigms. The potentially large space for innovation has to be explored in the search for technologies that can support large-scale and high-performance circuit design. Within this space, we analyze a set of emerging technologies characterized by a similar computational abstraction at the design level, i.e., a binary comparator or a majority voter. We demonstrate that new logic synthesis techniques, natively supporting this abstraction, are the technology enablers. We describe models and data-structures for logic design using emerging technologies and we show results of applying new synthesis algorithms and tools. We conclude that new logic synthesis methods are required to both evaluate emerging technologies and to achieve the best results in terms of area, power and performance.
关键词： logic expressive power,CMOS,CAD for nanotechnology,Beyond-complementary metal-oxide semiconductor (CMOS),enhanced functionality,nanotechnology,logic synthesis,emerging devices
更新于2025-09-19 17:13:59
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Integrated color photodetectors in 40 nm standard CMOS technology
摘要： For the further integration of receivers in multi-color visible light communication systems, a novel color photodetector (PD) was designed and fabricated by using a 40 nm standard complementary metal oxide semiconductor (CMOS) process without any process modifications. The PD consists of CMOS photodiode and two-dimensional (2D) polysilicon subwavelength grating above the photodiode. The 2D polysilicon grating is controlled in structural parameters to realize color filtering, based on guided-mode resonance, for the first time in a standard CMOS process. Here three kinds of color PDs were designed to respond to the three primary colors. The measured results demonstrate that the color PDs exhibit wavelength selectivity in the visible range (400-700 nm) and the maximum peaks in the spectral response curves of them are at 660 nm (red), 585 nm (green) and 465 nm (blue), respectively. In addition, the added 2D polysilicon grating almost does not reduce the responsivity of the photodiodes.
关键词： two-dimensional polysilicon subwavelength grating,Color photodetector,visible light communication,complementary metal oxide semiconductor (CMOS)
更新于2025-09-12 10:27:22
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Wearable SiPM-based NIRS Interface Integrated with Pulsed Laser Source
摘要： We present the design of a miniaturized probe integrating silicon photomultiplier and light-pulsing electronics in a single 2x2mm2 CMOS chip which includes functional blocks such as a fast pulse-laser driver and synchronized single-photon detection circuit. The photon pulses can be either counted on-chip or processed by an external high-speed electronic module such as time-corelated single photon counting (TCSPC) unit. The integrated circuit was assembled on a printed circuit board (PCB) and also on a 2.5D silicon interposer platform of size 1 cm and interfaced with a silicon photomultiplier (SiPM), vertical cavity surface emitting laser (VCSEL) and other ancillary components such as capacitors and resistors. Our approach of integrating an optical interface to optimize light collection on the small active area and light emission from the vertical-cavity surface-emitting laser (VSCEL) will facilitate clinical adoption in many applications and change the landscape of Near Infrared Spectroscopy (NIRS) hardware commercially due to significant optode-size reduction and the elimination of optical fibers.
关键词： Near-Infrared Spectroscopy (NIRS),Time-Domain (TD),complementary metal-oxide-semiconductor (CMOS),Vertical Cavity Surface Emitting Laser (VCSEL),Silicon Photomultiplier (SiPM),Optical Probe
更新于2025-09-11 14:15:04