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[IEEE 2019 IEEE Photonics Conference (IPC) - San Antonio, TX, USA (2019.9.29-2019.10.3)] 2019 IEEE Photonics Conference (IPC) - O-Band Quantum Dot Semiconductor Optical Amplifier Directly Grown on CMOS Compatible Si Substrate
摘要: We report the first demonstration of the O-band quantum dot semiconductor optical amplifier (QD-SOA) that is directly grown on CMOS compatible on-axis silicon substrate. The QD-SOA has a length of 3600 ????, tapered from 4 ???? to 5.5 ????, which can offer 29 dB on-chip gain and 22.8 dBm saturation output power with a minimum 7 dB fiber to fiber noise figure.
关键词: semiconductor optical amplifiers,molecular beam epitaxy,direct growth on silicon,Quantum dot devices
更新于2025-09-11 14:15:04