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Benchmark of Disilane and Liquid Si for the Low Temperature Epitaxial Growth of Si, SiGe and SiGeB
摘要： We have benchmarked Liquid Silicon and Disilane for SiGe(:B) growth with Digermane and Diborane in the 450-550°C range (P=20 Torr). The Si growth rate exponentially increased with temperature (Ea = 37 kcal.mol.-1) and was, at 500°C, ten time higher with LS than with SiH4 (although the Si flow was 9 times lower). At 500°C, the SiGe GR (the Ge content) increased linearly (sub-linearly) with the Ge2H6 flow and was higher (definitively lower) with LS than with Si2H6. The SiGe growth rate exponentially increased with temperature (Ea = 10.5 kcal.mol-1) while the Ge content decreased (-1.95%/10°C). SiGe:B layers grown at 500°C with LS were pseudomorphic for all save the highest B2H6 flow. The SiGe:B GR and the atomic Boron concentration increased with F(B2H6), while the resistivity decreased (down to 3.1×10-4Ω.cm). Islands becoming less dense and smaller as the B2H6 flow increases were present on the SiGe:B surfaces which were atomically smooth.
关键词： SiGe,SiGeB,Liquid Silicon,Disilane,low temperature epitaxial growth
更新于2025-09-23 15:21:01
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A Benchmark of 300mm RP-CVD Chambers for the Low Temperature Epitaxy of Si and SiGe
摘要： we have assessed, in 300 mm Reduced Pressure – Chemical Vapour Deposition chambers from major suppliers, the advantages and drawbacks of disilane for the low temperature growth of Si and SiGe. Si growth rates are, for T < 575°C, approximately ten times higher with Si2H6 than with SiH4, which are in turn roughly ten times higher than with SiH2Cl2. For given GeH4 and Si precursor mass-flow ratios, lower Ge contents and much higher SiGe growth rates are obtained at 550°C, 20 Torr with Si2H6 than with SiH4 and especially SiH2Cl2. Growth rates (Ge concentrations) are with SiH4 and SiH2Cl2 lower (slightly lower) in Supplier A than in Supplier B chamber. The situation is the opposite with Si2H6. This is assigned to (i) a ~ 5°C offset between the two and (ii) effective precursor flows which are different, most likely due to chamber geometry differences. Growth rate activation energies and relationships linking Ge concentration to precursor mass-flow ratios are quite similar, however, making process transfer between the two rather easy. Finally, we have compared ex-situ “HF-Last” wet cleanings and in-situ surface preparation processes for Si surface conditioning prior to epitaxy. Surfaces are after the latter always under high purity N2. This results in a threshold H2 bake temperature (above which there is no O interfacial contamination anymore) which is shifted downwards by ~ 25°C (from 775°C down to 750°C). Below that threshold, O sheet concentrations are with in-situ processes typically one third those associated with “HF-Last” wet cleanings and epitaxial surfaces are smoother.
关键词： surface preparation,SiGe,silane,disilane,RP-CVD,low temperature growth,Si,dichlorosilane
更新于2025-09-23 15:21:01