摘要： we have assessed, in 300 mm Reduced Pressure – Chemical Vapour Deposition chambers from major suppliers, the advantages and drawbacks of disilane for the low temperature growth of Si and SiGe. Si growth rates are, for T < 575°C, approximately ten times higher with Si2H6 than with SiH4, which are in turn roughly ten times higher than with SiH2Cl2. For given GeH4 and Si precursor mass-flow ratios, lower Ge contents and much higher SiGe growth rates are obtained at 550°C, 20 Torr with Si2H6 than with SiH4 and especially SiH2Cl2. Growth rates (Ge concentrations) are with SiH4 and SiH2Cl2 lower (slightly lower) in Supplier A than in Supplier B chamber. The situation is the opposite with Si2H6. This is assigned to (i) a ~ 5°C offset between the two and (ii) effective precursor flows which are different, most likely due to chamber geometry differences. Growth rate activation energies and relationships linking Ge concentration to precursor mass-flow ratios are quite similar, however, making process transfer between the two rather easy. Finally, we have compared ex-situ “HF-Last” wet cleanings and in-situ surface preparation processes for Si surface conditioning prior to epitaxy. Surfaces are after the latter always under high purity N2. This results in a threshold H2 bake temperature (above which there is no O interfacial contamination anymore) which is shifted downwards by ~ 25°C (from 775°C down to 750°C). Below that threshold, O sheet concentrations are with in-situ processes typically one third those associated with “HF-Last” wet cleanings and epitaxial surfaces are smoother.