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Parallel domain decomposition methods for a quantum-corrected drift–diffusion model for MOSFET devices
摘要： In this paper, we describe parallel domain decomposition methods based on the restricted additive Schwarz (RAS) method for a quantum-corrected drift-diffusion (QCDD) model for MOSFET devices. We have developed hybrid Message Passing Interface (MPI)/OpenMP parallelization algorithms of the QCDD system. For internode parallelization, two extensions of the RAS method are newly developed for the QCDD model. For intranode parallelization, we combine the conjugate gradient (CG) and BiCGSTAB procedures with a splitting-up operator method to realize parallelization of the incomplete factorization. The parallel numerical results for a three-dimensional Si bulk n-MOSFET on a multi-core NEC SX-ACE parallel computer are demonstrated. The intranode parallel numerical results are further evaluated on a many-core Cray XC40 parallel computer.
关键词： Restricted additive Schwarz method,Domain decomposition method,Numerical methods,Device simulation,Semiconductor,quantum-corrected drift–diffusion model
更新于2025-09-23 15:21:21
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Two different types of S-shaped J-V characteristics in organic solar cells
摘要： In this paper, S-shaped characteristics of organic solar cells (OSCs) are analyzed by a drift–diffusion model which includes charge carrier surface recombination and thermal injection on the anode and cathode through boundary conditions. By varying surface recombination velocities (SRVs) for electrons and holes on both contacts and the injection barrier heights for majority carriers, two different S-shaped deviations in OSCs J-V characteristics were observed. The first type of S-shaped J-V characteristic manifests the S-shape bending in the vicinity of the voltage axis, after which it rises almost exponentially. This kind of S-shape deformation was found to arise from the finite SRVs. The second type of the S-shaped J-V characteristic also makes a kink near the voltage axis but proceeds to grow monotonically, having only one saddle point. The S-shaped J-V curve of this kind turned out to be the consequence of the electron injection barrier height larger than 0.2 eV. The validity of our model is confirmed by comparing the simulated J-V curves with the experimentally obtained data. The model has been applied to the ITO/PEDOT:PSS/P3HT:PCBM/Al and ITO/PEDOT:PSS/P3HT:ICBA/Al solar cells. For the P3HT:PCBM based solar cells, the regular J-shaped J-V curves were measured, while for the P3HT:ICBA solar cells, the J-V curves with anomalous S-shape behavior were recorded. All experimentally obtained J-V curves were reproduced very well with our model. It seems that the ITO/PEDOT:PSS/ P3HT:ICBA/Al solar cell S-shaped J-V curve originates from the electron barrier height on the cathode contact, rather than from the low surface recombination on the electrodes.
关键词： Solar cells,Drift–diffusion model,Organic materials,S-shaped J-V curve
更新于2025-09-19 17:13:59
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Three-Dimensional Drift-Diffusion Model for Simulation and Investigation of Bordering Effects in Silicon Solar Cells
摘要： In this paper, the influence of bordering effects on solar cells parameters is investigated through a three-dimensional model, which these effects are ignored in one dimensional model cases. They are incorporated in two and three-dimensional models by an additional recombination term in the drift-diffusion equations. The additional recombination term is calculated via the Schockley-Red-Hall theory. The model includes also radiative recombination process and neglects auger recombination (considered only in heavily doped p-n junctions). This model is based on the solution of Poisson’s equation and continuity equations of electrons and holes. At metallic contacts, Dirichlet-type boundary conditions are applied, while Neumann-type boundary conditions are used in other interfaces of the device. This modified model was tested on a simple Silicon p-n junction to show the contribution of the bordering effects in the carrier and currents densities.
关键词： Shockley-Read-Hall,p-n junction,3D model simulation,Solar cells,Bordering effects,Drift-diffusion model,Boundary conditions
更新于2025-09-16 10:30:52
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The improved performance of BHJ organic solar cells by random dispersed metal nanoparticles through the active layer
摘要： In this paper, the performance of bulk heterojunction (BHJ) organic solar cells (OSCs) in the presence of random dispersed Ag nanoparticles (NPs) into the active layer is investigated. By the well-known Maxwell-Garnett effective medium theory, we have analyzed the optical absorption of P3HT:PCBM and PCDTBT:PCBM photoactive blends when spherical Ag NPs are randomly embedded in them. The photocurrent enhancement of OSCs based on the blend:AgNP composites has been examined by an analytical drift-diffusion method. Our theoretical analysis demonstrates a considerable enhancement in the optical absorption of the blends with Ag NPs resulted in the power conversion efficiency (PCE) improvement of the devices up to 65.6% in comparison with the reference blends. In addition, the spectrally correlation of simulated external quantum efficiency (EQE) and the absorption coefficient enhancements proves the influence of localized surface plasmon resonance (LSPR) of the Ag NPs in boosting the performance of the OSC devices.
关键词： plasmonic enhancement,drift-diffusion model,Organic solar cells,effective medium theory,Random distribution
更新于2025-09-16 10:30:52