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Hole spin in tunable Ge hut wire double quantum dot
摘要： Holes in germanium (Ge) exhibit strong spin-orbit interaction, which can be exploited for fast and all-electrical manipulation of spin states. Here, we report transport experiments in a tunable Ge hut wire hole double quantum dot. We observe the signatures of Pauli spin blockade (PSB) with a large singlet-triplet energy splitting of ~1.1 meV and extract the g factor. By analyzing the the PSB leakage current, we obtain a spin-orbit length ?????? of ~ 40–100 nm. Furthermore, we demonstrate the electric dipole spin resonance. These results lay a solid foundation for implementing high quality tunable hole spin-orbit qubits.
关键词： Pauli spin blockade,electric dipole spin resonance,germanium,spin-orbit interaction,quantum dots
更新于2025-09-23 15:19:57
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Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot
摘要： Electrical tunability of the g-factor of a confined spin is a long-time goal of the spin qubit field. Here we utilize the electric dipole spin resonance (EDSR) to demonstrate it in a gated GaAs double-dot device confining a hole. This tunability is a consequence of the strong spin-orbit interaction (SOI) in the GaAs valence band. The SOI enables a spin-flip interdot tunneling, which, in combination with the simple spin-conserving charge transport leads to the formation of tunable hybrid spin-orbit molecular states. EDSR is used to demonstrate that the gap separating the two lowest energy states changes its character from a charge-like to a spin-like excitation as a function of interdot detuning or magnetic field. In the spin-like regime, the gap can be characterized by the effective g-factor, which differs from the bulk value owing to spin-charge hybridization, and can be tuned smoothly and sensitively by gate voltages.
关键词： g-factor,spin qubit,electric dipole spin resonance,hole spin,quantum dot,GaAs,spin-orbit interaction
更新于2025-09-12 10:27:22