研究目的
To demonstrate the electrical tunability of the g-factor of a confined spin in a gated GaAs double-dot device confining a hole, utilizing the electric dipole spin resonance (EDSR) and the strong spin-orbit interaction (SOI) in the GaAs valence band.
研究成果
The study successfully demonstrates the electrical tunability of the effective g-factor in a gated GaAs double-dot device confining a hole, using the electric dipole spin resonance (EDSR). The tunability is a result of the strong spin-orbit interaction (SOI) in the GaAs valence band, which enables the formation of tunable hybrid spin-orbit molecular states. This finding paves the way for local addressability of spin qubits in multi-qubit systems and simplifies the coherent control protocol of double-dot systems.
研究不足
The study is limited to a specific type of quantum dot device (GaAs double-dot) and focuses on the electrical tunability of the g-factor for a confined hole spin. The applicability to other systems or spin types is not explored.
