- 标题
- 摘要
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Device noise reduction for silicon nanowire field-effect-transistor based sensors by using a Schottky junction gate
摘要： The sensitivity of metal-oxide-semiconductor field-effect transistor (MOSFET) based nanoscale sensors is ultimately limited by noise induced by carrier trapping/detrapping processes at the gate oxide/semiconductor interfaces. We have designed a Schottky junction gated silicon nanowire field-effect transistor (SiNW-SJGFET) sensor, where the Schottky junction replaces the noisy oxide/semiconductor interface. Our sensor exhibits significantly reduced device noise, 2.1×10-9 V2μm2/Hz at 1 Hz, compared to reference devices with the oxide/semiconductor interface operated at both inversion and depletion modes. Further improvement can be anticipated by wrapping the nanowire by such a Schottky junction thereby eliminating all oxide/semiconductor interfaces. Hence, a combination of the low-noise SiNW-SJGFET device with a sensing surface of the Nernstian response limit holds promises for future high signal-to-noise ratio sensor applications.
关键词： Noise reduction,field-effect transistor,ion sensor,low frequency noise,schottky junction gate,silicon nanowire
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Analysis of 1/f Noise for Organic TFTs Considering Mobility Power-Law Parameter
摘要： Based on carrier number fluctuation model, 1/f noise is analyzed for organic thin-film transistors (TFTs) at low drain voltage. The carrier mobility is gate-voltage-dependent, and is described by a power-law function. The mobility power-law parameter α determines the relationship between drain current noise power spectral density (PSD) SIDS and drain current IDS, and it is found that SIDS /I 2 DS when α = 1. It is different from the well-known rule for the MOSFETs with the constant carrier mobility: When SIDS /I 2 DS , Hooge’s mobility fluctuation model dominates the 1/f noise.
关键词： carrier mobility,Thin-film transistor (TFT),analytical model,low frequency noise
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC) - Shenzhen, China (2018.11.4-2018.11.7)] 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC) - Investigation of Temperature-Dependent Electrical Behavior and Trap Effect in AlGaN/GaN HEMT
摘要： Temperature-dependent electrical behavior and trap effect in AlGaN/GaN high-electron mobility transistors (HEMT) were investigated at temperatures ranging from 25°C to 125°C. The experiment results show that transfer curves negatively shift and transconductance degrades with the increase in temperature at DC and pulsed conditions, meanwhile, gate leakage current increases significantly. Besides, the shift variation of pulsed transfer curves becomes larger at the elevated temperature and static bias states. This mechanism could be attributed to the enhancement of electron-assisted tunneling ability and easily escaping from the traps for trapped electrons at higher temperature. These traps were confirmed on the base of low frequency noise technique under different temperatures, and the extracted activation energy is 0.521eV for the present devices. The above results may provide useful guidance for design and application of the AlGaN/GaN HEMT.
关键词： Trap Effect,GaN,HEMT,Low Frequency Noise,Temperature
更新于2025-09-23 15:23:52
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INVESTIGATION OF FREQUENCY NOISE AND SPECTRUM LINEWIDTH IN SEMICONDUCTOR OPTICAL AMPLIFIER
摘要： The characteristics of FM noise and linewidth of semiconductor optical amplifier without facet mirrors were theoretically analyzed and experimentally confirmed. The concept of discrete longitudinal mode for the spontaneous emission was introduced as the basis of quantum mechanical characteristics, allowing the quantitative examination of noise sources. The continuously broaden output spectrum profile of the amplified spontaneous emission (ASE) was well explained as a spectrum broadening of each longitudinal mode. We found that the linewidth of the inputted signal light hardly changes by the optical amplification in the SOA. The FM noise increases proportional to square value of the noise frequency and less affected by the electron density fluctuation, the linewidth enhancement factor and the ASE. The higher FM noise in the higher noise frequency is caused by the intrinsic phase fluctuation on the optical emission. The characteristics of the linewidth and the noise frequency dependency were experimentally confirmed.
关键词： noise,frequency noise,Optical fiber communication,linewidth,semiconductor optical amplifier
更新于2025-09-23 15:22:29
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Estimation of Zero-Frequency Noise Power Density in Digital Imaging
摘要： Noise power spectrum (NPS) at zero frequency can efficiently represent noise properties of imaging systems. However, estimations of zero-frequency NPS are susceptible to distortion due to several factors leading to low-estimate precisions. In this letter, a high-precision estimate algorithm for zero-frequency NPS is proposed. The proposed estimate is a compensated sum of signal variances and covariances. The accuracy and precision of the proposed approach were first observed with synthetic data. A flat panel radiography detector based on CsI(Tl)-scintillator was then used to experimentally observe the improved estimate precision of the proposed algorithm. Experiment results showed that the estimation precision was improved to 14 times compared to that of the conventional method.
关键词： Radiography imaging,sample mean of periodograms,zero-frequency noise power density
更新于2025-09-23 15:22:29
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[IEEE 2018 33rd Symposium on Microelectronics Technology and Devices (SBMicro) - Bento Gon?alves, Brazil (2018.8.27-2018.8.31)] 2018 33rd Symposium on Microelectronics Technology and Devices (SBMicro) - Low-Frequency Noise Investigation in Long-Channel Fully Depleted Inversion Mode n-type SOI Nanowire
摘要： This work presents a Low-Frequency Noise (LFN) investigation in fully depleted n-type Silicon-On-Insulator (SOI) nanowire transistors working in linear region with VDS=50mV. Long-channel devices of 1μm and 10μm are evaluated. A wide range of fin width is considered in the LFN analysis, from 15nm up to 105nm. The results showed a flicker noise (1/fγ) behavior with gate voltage and a decrease of normalized noise SID/IDS overdrive increase for frequencies bellow 500Hz. Above this frequency, that generation and recombination noise with 1/f2 decay overlaps the flicker noise, becoming the predominant noise source. The cut-off frequency increases with gate voltage overdrive while the gamma exponent decreases. Gamma reduces from 1.3 to 0.9 and from 0.95 to 0.65 for devices with channel length of 1μm and 10μm, respectively. A major noise variation of about one order of magnitude with gate voltage overdrive increase was observed in devices of 1μm long in comparison to channel length of 10μm. The devices showed weak noise dependence on fin width due to mobility decrease as nanowires become narrower.
关键词： fully depleted SOI,low-frequency noise,nanowire
更新于2025-09-23 15:21:21
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[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - Mid-infrared photoresponse and robotic fabrication of graphene/h-BN van der Waals heterostructures
摘要： This paper introduces the parabolic variance (PVAR), a wavelet variance similar to the Allan variance (AVAR), based on the linear regression (LR) of phase data. The companion article arXiv:1506.05009 [physics.ins-det] details the Ω frequency counter, which implements the LR estimate. The PVAR combines the advantages of AVAR and modified AVAR (MVAR). PVAR is good for long-term analysis because the wavelet spans over 2τ, the same as the AVAR wavelet, and good for short-term analysis because the response to white and flicker PM is 1/τ3 and 1/τ2, the same as the MVAR. After setting the theoretical framework, we study the degrees of freedom and the confidence interval for the most common noise types. Then, we focus on the detection of a weak noise process at the transition—or corner—where a faster process rolls off. This new perspective raises the question of which variance detects the weak process with the shortest data record. Our simulations show that PVAR is a fortunate tradeoff. PVAR is superior to MVAR in all cases, exhibits the best ability to divide between fast noise phenomena (up to flicker FM), and is almost as good as AVAR for the detection of random walk and drift.
关键词： atomic frequency standard,frequency noise,measurement uncertainty,oscillator,frequency stability,Allan variance,flicker,phase noise
更新于2025-09-23 15:19:57
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Coherence of a Driven Electron Spin Qubit Actively Decoupled from Quasistatic Noise
摘要： The coherence of electron spin qubits in semiconductor quantum dots suffers mostly from low-frequency noise. During the past decade, efforts have been devoted to mitigate such noise by material engineering, leading to substantial enhancement of the spin dephasing time for an idling qubit. However, the role of the environmental noise during spin manipulation, which determines the control fidelity, is less understood. We demonstrate an electron spin qubit whose coherence in the driven evolution is limited by high-frequency charge noise rather than the quasistatic noise inherent to any semiconductor device. We employ a feedback-control technique to actively suppress the latter, demonstrating a π-flip gate fidelity as high as 99.04 (cid:1) 0.23% in a gallium arsenide quantum dot. We show that the driven-evolution coherence is limited by the longitudinal noise at the Rabi frequency, whose spectrum resembles the 1=f noise observed in isotopically purified silicon qubits.
关键词： gallium arsenide quantum dot,low-frequency noise,Rabi frequency,1=f noise,semiconductor quantum dots,π-flip gate fidelity,isotopically purified silicon qubits,feedback-control technique,high-frequency charge noise,electron spin qubits
更新于2025-09-19 17:13:59
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Shaped Accelerating Beams for Materials Processing
摘要： This paper introduces the parabolic variance (PVAR), a wavelet variance similar to the Allan variance (AVAR), based on the linear regression (LR) of phase data. The companion article arXiv:1506.05009 [physics.ins-det] details the Ω frequency counter, which implements the LR estimate. The PVAR combines the advantages of AVAR and modified AVAR (MVAR). PVAR is good for long-term analysis because the wavelet spans over 2τ, the same as the AVAR wavelet, and good for short-term analysis because the response to white and flicker PM is 1/τ3 and 1/τ2, the same as the MVAR. After setting the theoretical framework, we study the degrees of freedom and the confidence interval for the most common noise types. Then, we focus on the detection of a weak noise process at the transition—or corner—where a faster process rolls off. This new perspective raises the question of which variance detects the weak process with the shortest data record. Our simulations show that PVAR is a fortunate tradeoff. PVAR is superior to MVAR in all cases, exhibits the best ability to divide between fast noise phenomena (up to flicker FM), and is almost as good as AVAR for the detection of random walk and drift.
关键词： atomic frequency standard,frequency noise,measurement uncertainty,oscillator,frequency stability,Allan variance,flicker,phase noise
更新于2025-09-19 17:13:59
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Room temperature low frequency noise in n <sup>+</sup> -InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes
摘要： Low frequency forward current noise as well as the photocurrent noise are studied in InAsSbP/InAs double heterostructure (DH) photodiodes, in the frequency range 1–104 Hz. The photocurrent noise in DH photodiodes is signi?cantly lower than in single heterostructure (SH) photodiodes. The forward current noise in a DH diode exhibiting the 1/f frequency dependence is also much lower than that in SH diodes. However, in some DH diodes, it is the generation-recombination mechanism that provides the dominant contribution to the forward current noise; in this case the noise level is signi?cantly higher. At suf?ciently high forward current densities, the noise decreases with current. The observed generation-recombination noise spectrum cannot be described within the conventional theory.
关键词： InAs photodiodes,low frequency noise,forward bias,photocurrent noise,Mid-IR photodetectors
更新于2025-09-19 17:13:59