研究目的
To investigate the temperature-dependent electrical behavior and trap effect in AlGaN/GaN high-electron mobility transistors (HEMT) at temperatures ranging from 25°C to 125°C, and to understand the underlying mechanisms such as electron-assisted tunneling and trap escape at elevated temperatures.
研究成果
The electrical properties of AlGaN/GaN HEMTs degrade with increasing temperature, characterized by negative shifts in transfer curves, reduced transconductance, and increased gate leakage current. Pulsed measurements show larger shifts at higher temperatures and bias states, attributed to reduced virtual gate effect and enhanced electron escape from traps. The activation energy of traps was determined to be 0.521eV using low-frequency noise analysis. These findings provide insights for improving HEMT design and reliability in high-temperature applications.
研究不足
The study is limited to temperatures up to 125°C and specific bias conditions; it does not explore higher temperatures or other stress factors. The devices used have fixed dimensions and passivation, which may not represent all HEMT variants. The low-frequency noise technique might not capture all trap types or depths.
1：Experimental Design and Method Selection:
The study involved measuring DC and pulsed current-voltage (I-V) characteristics and low-frequency noise of AlGaN/GaN HEMTs at temperatures from 25°C to 125°C to analyze electrical behavior and trap effects. Theoretical models like the Arrhenius equation were used for trap analysis.
2：Sample Selection and Data Sources:
AlGaN/GaN HEMT devices with a gate length of 0.1 μm and gate width of 0.84 μm, passivated with an 80 nm SiNx layer, were used as samples.
3：1 μm and gate width of 84 μm, passivated with an 80 nm SiNx layer, were used as samples.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Semiconductor device analyzer (Agilent B1500A), SR785 dynamic signal analyzer, filters and amplifiers (Proplus 9812B), temperature box (GWS).
4：Experimental Procedures and Operational Workflow:
DC characteristics were measured with varying VGS and VDS. Pulsed I-V measurements were conducted at bias states (0V,0V), (-8V,0V), and (-8V,10V) with pulse width of 1ms and period of 50ms. Low-frequency noise measurements were performed, and data were analyzed using power spectral density and Arrhenius plots.
5：Data Analysis Methods:
Data were analyzed to extract parameters like activation energy from noise spectra using Arrhenius equations, and shifts in transfer curves and transconductance were quantified.
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