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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - High performance x-ray source using point-typed CNT field emitter
摘要： The high performance cold cathode x-ray source was fabricated by using the point-typed CNT field emitter. The cold cathode x-ray source consists of the CNT point emitter, the metal mesh gate electrode, the metal hole focusing lens and the tungsten target anode electrode. To fabricate x-ray source, such components were mounted in a SUS vacuum chamber. The fabricated CNT x-ray source showed a good resolution of x-ray images at a low anode current and at a low anode voltage, and also indicated stable operation. We evaluated x-ray images according to the tube voltage and the tube current, respectively.
关键词： point-typed field emitter,carbon nanotube field emitter,metal mesh gate electrode,x-ray image,cold cathode x-ray source,tungsten anode electrode
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Stable and low noise field emission from single p-type Si-tips
摘要： Single gated p-type Si-tips with two different tip radii were fabricated. An emission current of 2.40 μA was measured for the sharp-edged tip at a voltage of 170 V. In contrast, a stable and reproducible emission behavior was observed with an increased tip radius resulting in a pronounced saturation region between 90 V and 150 V, but merely an emission current of 0.55 μA at 150 V. More remarkable is the stable emission behavior with fluctuation of ± 4 % during a measurement period of 30 minutes. The integral emission current in a homogeneous tip array (16 emitters) showed nearly the same I-V characteristics compared to the single tip and is therefore, most dominated by only a stable single tip in the array.
关键词： gate-electrode,p-type Si-tips,low current fluctuations,emission stability,field emission
更新于2025-09-23 15:21:21