研究目的
Investigating the emission behavior of single gated p-type Si-tips with different tip radii for stable and low noise field emission.
研究成果
Gated p-type single Si-tips can achieve stable and low noise field emission with currents in the μA-range. The emission stability is influenced by the tip radius, with larger radii showing more pronounced saturation regions. The study suggests the potential for arrays of individually addressable single p-type Si-tips.
研究不足
The study is limited to p-type Si-tips with specific doping levels and geometries. The vacuum conditions and setup may not represent all possible operational environments.
1：Experimental Design and Method Selection:
Fabrication of gated p-type single Si-tips with B-doping and integrated Au gate-electrode. Investigation of FE properties under vacuum conditions.
2：Sample Selection and Data Sources:
Two emitter tips with different geometric tip radii (sample A with approx. 55 nm and sample B with approx. 15 nm).
3：List of Experimental Equipment and Materials:
SEM for imaging, vacuum setup with mica spacer and grid-anode.
4：Experimental Procedures and Operational Workflow:
I-V measurements at an anode voltage of 400 V with varying gate voltage from 0 to 150 V (sample A) and 0 to 170 V (sample B).
5：Data Analysis Methods:
Analysis of emission current stability and fluctuations over time.
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