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- 2018
- energy distribution
- graphene edge
- vacuum transistor
- Field emission
- Optoelectronic Information Science and Engineering
- Naval Research Laboratory
- KeyW Corporation
- Pohang University of Science and Technology (POSTECH)
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Low-Temperature Graphene Growth by Forced Convection of Plasma-Excited Radicals
摘要： We developed the forced convection (FC)-PECVD method for the synthesis of graphene in which a specially designed blowing plasma source is used at moderate gas pressure (1-10 Torr) and the distribution of reactive radicals reaching the substrate surface can be controlled by forced convection. Self-limiting growth of graphene occurs on copper foil and monolayer graphene growth with few defects is achieved even at low temperature (<400 °C). We also demonstrated the enlargement of growth area using the scalable blowing plasma source. We expect that the FC-PECVD method overcomes the limitations of conventional low-temperature PECVD and provides a breakthrough for the achievement of industrial applications based on graphene.
关键词： low temperature growth,self-limiting growth,Graphene,forced-convection plasma CVD
更新于2025-09-23 15:23:52
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Wafer-scale Fabrication of Nitrogen-doped Reduced Graphene Oxide with Enhanced Quaternary-N for High-Performance Photodetection
摘要： We demonstrated a simple and scalable fabrication route of nitrogen-doped reduced graphene oxide (N-rGO) photodetector on 8-inch wafer-scale. The N-rGO was prepared through in-situ plasma-treatment in an acetylene-ammonia atmosphere to achieve n-type semiconductor with substantial formation of quaternary-N substituted into the graphene lattice. The morphology, structural, chemical composition and electrical properties of the N-rGO was carefully characterized and being used for the device fabrication. The N-rGO devices were fabricated in a simple metal-semiconductor-metal (MSM) structure with unconventional metal-on-bottom configuration to promote high-performance photodetection. The N-rGO devices exhibited enhanced photoresponsivity as high as 0.68 A W?1 at 1.0 V, which is about two orders of magnitude higher compared to a pristine graphene and wide-band photo-induced response from visible to near-infrared (NIR) region with increasing sensitivity in the order of 785 nm, 632.8 nm and 473 nm excitation wavelengths. We also further demonstrated a symmetric characteristic of photo-induced response to any position of local laser excitation with respect to the electrodes. The excellent features of wafer-scale N-rGO devices suggest a promising route to merge the current silicon technology and two-dimensional materials for future optoelectronic devices.
关键词： photodetector,plasma treatment,quaternary-N,wafer-scale fabrication,Nitrogen-doped reduced graphene oxide
更新于2025-09-23 15:23:52
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Maximizing the Current Output in Self-Aligned Graphene–InAs–Metal Vertical Transistors
摘要： With finite density of states and electrostatically tunable work function, graphene can function as a tunable contact for semiconductor channel to enable vertical field effect transistors (VFET). However, the overall performance, especially the output current density is still limited by the low conductance of the vertical semiconductor channel, as well as large series resistance of graphene electrode. To overcome these limitations, we construct a VFET by using single crystal InAs film as the high conductance vertical channel and self-aligned metal contact as the source-drain electrodes, resulting a record high current density over 45,000 A/cm2 at a low bias voltage of 1 V. Furthermore, we construct a device-level VFET model using resistor network method, and experimentally validate the impact of each geometry parameter on device performance. Importantly, we found the device performance is not only a function of intrinsic channel material, but also greatly influenced by device geometries and footprint. Our study not only pushes the performance limit of graphene VFETs, but also sheds light on van der Waals integration between two-dimensional material and conventional bulk material for high performance VFETs and circuits.
关键词： resistor network model,high current density,vertical transistor,graphene,van der Waals heterostructure,InAs film
更新于2025-09-23 15:23:52
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Preparation of graphene nanoribbons (GNRs) from twisted structure carbon nanotubes using unzipping technique
摘要： This work deals with the preparation of graphene nano ribbons (GNRs), which are small bars or strips of graphene with narrow range width less than 50 nm and one atom thick sheet (approximately 140 °A). This material has many applications in electronics, polymer composite, contrast agent bio-imaging and others. This material was prepared from twisted structure of carbon nanotubes CNTs using oxidation process by acids and breaking down by high frequency ultrasonication (sonochemical unzipping). Pre-prepared twisted CNTs were characterized by scanning electron microscope (HRSEM) before treatment. The size, morphology, crystallinity of prepared graphene nanoribbons was also investigated using transmission electron microscope, high resolution transmission electron microscope, and X-ray diffraction and particle size analyzer. The results showed of formation of GNRs with narrow width as lower than 29 nm and uniform sizes. X-ray diffraction reveals Bragg reflections corresponding to the lattice planes (002), (100), (101), (004), and (110) matched with hexagonal system of graphite.
关键词： sonochemical unzipping,Twisted carbon nanotubes,graphene nanoribbons
更新于2025-09-23 15:23:52
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Electron Transport Properties of Graphene-Based Quantum Wires
摘要： We study the electronic transport in quantum wire structures made of graphene. By using the nonequilibrium Green function method, the transmission is studied for varies sizes samples. Our results show that the transmission sensitive depends on the size of the system and exhibits fluctuations due to the mismating of propagating modes between the central region and the leads. The number of resonant transmission peaks increases with the increase of length of the wire, while the width of the leads mainly affect the transmission in the region of low energy. A central energy gap in the transmission spectrum is more likely to appear in the quantum wire system than in the uniform armchair graphene nanoribbons. Moreover, the energy gap can be widened for a certain size of the quantum wire system by changing the width of the leads. These results may have potential applications in designing graphene-based devices.
关键词： graphene,quantum wire,transmission
更新于2025-09-23 15:23:52
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Edge-dependent reflection and inherited fine structure of higher-order plasmons in graphene nanoribbons
摘要： We investigate higher-order plasmons in graphene nanoribbons, and we present how electronic edge states and wave-function fine structure influence the graphene plasmons. Based on nearest-neighbor tight-binding calculations, we find that a standing-wave model based on nonlocal bulk plasmon dispersion is surprisingly accurate for armchair ribbons of widths even down to a few nanometers, and we determine the corresponding phase shift upon edge reflection and an effective ribbon width. Wider zigzag ribbons exhibit a similar phase shift, whereas the standing-wave model describes few-nanometer zigzag ribbons less satisfactorily, to a large extent because of their edge states. We directly confirm that also the larger broadening of plasmons for zigzag ribbons is due to their edge states. Furthermore, we report a prominent fine structure in the induced charges of the ribbon plasmons, which for armchair ribbons follows the electronic wave-function oscillations induced by intervalley coupling. Interestingly, the wave-function fine structure is also found in our analogous density-functional theory calculations, and both these and tight-binding numerical calculations are explained quite well with analytical Dirac theory for graphene ribbons.
关键词： plasmons,edge states,tight-binding,density-functional theory,Dirac theory,graphene nanoribbons
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP) - Auckland (2018.8.5-2018.8.8)] 2018 IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP) - Anisotropic HIE-FDTD Scheme to Analyze Magnetically Biased Graphene
摘要： An anisotropic hybrid implicit-explicit finite-difference time-domain (HIE-FDTD) scheme is developed to investigate the magnetically biased graphene. The anisotropic conductivity of the graphene is calculated in this scheme. The time increment in proposed method is not related with the fine meshes in the graphene sheet, so this scheme has much higher simulation efficiency than the conventional FDTD scheme.
关键词： magnetically biased,graphene,Terahert time-domain finite-difference
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE International Conference on Computational Electromagnetics (ICCEM) - Chengdu (2018.3.26-2018.3.28)] 2018 IEEE International Conference on Computational Electromagnetics (ICCEM) - The HIE-FDTD Method for Simulating Graphene
摘要： The hybrid implicit-explicit finite-difference time domain (HIE-FDTD) method is presented to simulate the graphene layer. By using the auxiliary differential equation (ADE) and Pade fitting method, both the interband and intraband conductivity of the graphene are incorporated into the HIE-FDTD method. The time step increment in the proposed method is not determined by the fine meshes in the graphene layer, so the computational efficiency of this method is greatly improved from that of the conventional finite-difference time domain (FDTD) method, which is well validated by numerical examples. Besides, the numerical simulation also shows that the interband conductivity of the graphene has important effects on the performance of the graphene, especially at higher Terahertz (THz) spectra.
关键词： HIE-FDTD,graphene,FDTD
更新于2025-09-23 15:23:52
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Carbon Allotropes: Metal-Complex Chemistry, Properties and Applications || Classic Carbon Nanostructures
摘要： The era of carbon-based nanotechnology, as it is well-known, started from 1985 when the fullerene C60 was discovered. The rediscovery of carbon nanotubes and unexpected discovery of graphene gave a powerful impulse to the further development of carbon nanostructures. At present, these nanocarbons, as well as nanodiamonds or nanofibers, can already be considered as 'conventional' carbon nanostructures.
关键词： nanofibers,nanodiamonds,carbon nanotubes,graphene,carbon nanostructures,fullerenes
更新于2025-09-23 15:23:52
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Growth and Self-Assembly of Silicon–Silicon Carbide Nanoparticles into Hybrid Worm-Like Nanostructures at the Silicon Wafer Surface
摘要： This work describes the growth of silicon–silicon carbide nanoparticles (Si–SiC) and their self-assembly into worm-like 1D hybrid nanostructures at the interface of graphene oxide/silicon wafer (GO/Si) under Ar atmosphere at 1000 °C. Depending on GO film thickness, spread silicon nanoparticles apparently develop on GO layers, or GO-embedded Si–SiC nanoparticles self-assembled into some-micrometers-long worm-like nanowires. It was found that the nanoarrays show that carbon–silicon-based nanowires (CSNW) are standing on the Si wafer. It was assumed that Si nanoparticles originated from melted Si at the Si wafer surface and GO-induced nucleation. Additionally, a mechanism for the formation of CSNW is proposed.
关键词： nanoparticles,thermal reduction,silicon carbide,graphene oxide,self-assembly,silicon,nanowires
更新于2025-09-23 15:23:52