1：Experimental Design and Method Selection:

The study involves thermal annealing of GO-coated silicon wafers at 1000°C under Ar atmosphere to promote the growth and self-assembly of Si-SiC nanoparticles. The method is based on previous research on graphite-encapsulated nanoparticles and utilizes the modified Hummers' method for GO preparation.

2：Sample Selection and Data Sources:

p-type silicon (100)-oriented wafers were used as substrates. GO films of different thicknesses (samples A and B) were deposited using GO dispersions of varying concentrations.

3：List of Experimental Equipment and Materials:

Materials include graphite flakes, sodium nitrate, potassium permanganate, hexane, sulfuric acid, hydrogen peroxide, acetone, ethanol. Equipment includes a quartz tube furnace for annealing, Raman spectrometer (WITec alpha 300 RA+), FT-IR spectrometer (Perkin-Elmer Spectrum 100), profilometer (KLA-Tencor P-15), FE-SEM (Zeiss Auriga, Hitachi STEM-5500), HR-TEM (JEOL ARM 200F, JEOL 2010).

4：0). Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: GO was prepared and deposited on cleaned Si wafers. Samples were dried and annealed at 1000°C for 1 hour under Ar. Characterization was performed using Raman spectroscopy, FT-IR, profilometry, FE-SEM, and HR-TEM.

5：Data Analysis Methods:

Raman and FT-IR spectra were analyzed for band shifts and intensity changes to assess GO reduction and nanoparticle formation. FE-SEM and HR-TEM images were used to study morphology and structure, with interplanar spacing measured via FFT analysis.