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oe1(光电查) - 科学论文

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  • Novel boron doped p-type Cu2O thin film as hole selective contact in c-Si solar cell

    摘要： P-type Cu2O thin film doped with trivalent cation Boron is demonstrated for the first time as an efficient hole selective layer for c-Si heterojunction solar cell. Cu2O and Cu2O:B films were deposited by rf- magnetron sputtering and the optical and electrical properties of the doped and undoped films were investigated. Boron doping enhanced the carrier concentration and the electrical conductivity of the Cu2O film. The band alignment of the Cu2O:B/Si heterojunction was investigated using XPS and UPS measurements. The Cu2O:B/Si interface has a valance band offset of 0.08 eV which facilitates hole transport and a conduction band offset of 1.35 eV which block the electrons. A thin SiOx tunnel oxide interlayer was also explored as the passivation layer. The initial trials of incorporating this Cu2O:B layer as hole transporting layer in a single heterojunction solar cell with the structure, ITO/Cu2O:B/n-Si/Ag, and cell area of 1 cm2 yielded an open-circuit voltage of 370 mV, short-circuit current density of 36.5 mA/cm2 and an efficiency of 5.4 %. This p-type material could find potential applications in various optoelectronic applications like organic solar cells, TFTs, and LEDs.

    关键词： Silicon heterojunction,Photovoltaics,Carrier selective solar cells,Sputtering,Copper Oxide,Hole Selective layer

    更新于2025-09-23 15:19:57

  • Effects of oxidation state on photovoltaic properties of reactively magnetron sputtered hole-selective WO<sub>x</sub> contacts in silicon heterojunction solar cells

    摘要： The stoichiometry value x of WOx, or its oxidation state, is crucial for improving performances of the hole-selective contact heterojunction silicon solar cell. However, it is challenging to tune the films’ oxidation state using the well-known evaporation method. In this study, a simulation was performed to analyze the effect of x on short-circuit current (Jsc) loss, attributed to the hole-selective contact in the device. Compared to the thickness of WOx layer, x has a more important role in minimizing Jsc loss. Based on the simulation, the WOx/c-Si heterojunction solar cells having hole-selective WOx contacts with tuned x to vary its oxidation state were fabricated using reactive magnetron sputtering. The relationships of the open-circuit voltage (Voc) and Jsc with respect to x were similar. The experimentally determined Jsc increased from 34.7 to 36.6 mA/cm2 when x was increased from 2.72 to 2.77; this result is consistent with the simulation. Nevertheless, fill factor (FF) reduced with the increase of x, owing to the reduced conductivity of WOx. Both oxidation state and film conductivity must be as high as possible to simultaneously achieve high Voc, Jsc, and FF. The lowest x yielded a solar cell efficiency of 13.3%.

    关键词： Current loss,Tungsten oxide,Hole-selective contact,Heterojunction solar cell

    更新于2025-09-19 17:13:59

  • [IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Photon Management for Silicon Solar Cells featuring Hole-Selective Molybdenum Oxide Rear Contacts: An Optical Simulation Study

    摘要： Passivated, hole-selective contacts play important role in reducing surface recombination by lowering the concentration of electrons in the rear side of a solar cell. However, parasitic optical losses in these contacts can still limit the performance of the cell. In this work, the long wavelength optical losses of silicon solar cells featuring hole-selective molybdenum oxide (MoOx) rear contacts are investigated using optical simulations. The potential of these selective contacts for possible enhancement of photogenerated current density was also investigated for their use with nanostructured dielectric layers.

    关键词： photon management,FDTD simulation,grating nanostructure,silicon solar cell,hole selective contact

    更新于2025-09-16 10:30:52

  • Transmission Electron Microscopy and Electron Energy-Loss Spectroscopy Studies of Hole-Selective Molybdenum Oxide Contacts in Silicon Solar Cells

    摘要： In this study, sub-stochiometric hole-selective molybdenum oxide (MoOx) contacts in crystalline silicon (c-Si) solar cells were investigated by a combination of transmission electron microscopy (TEM) and spatially-resolved electron energy-loss spectroscopy (SR-EELS). It was observed that a ≈ 4 nm SiOx interlayer grows at the MoOx/c-Si interface during the evaporation of MoOx over c-Si substrate. SR-EELS analyses revealed the presence of 1.5 nm diffused MoOx/ITO (indium tin oxide) interface in both as-deposited and annealed samples. Moreover, the presence of a 1 nm thin layer with a lower oxidation state of Mo was detected at SiOx/MoOx interface in as-deposited state which disappears upon annealing. Overall, it was evident that no hole-blocking interlayer is formed at MoOx/ITO interface during annealing and homogenization of the MoOx layer takes place during the annealing process. Furthermore, device simulations revealed that efficient hole collection is dependent on MoOx work function and that reduction in work function of MoOx results in loss of band bending and negatively impacts hole-selectivity.

    关键词： silicon,electron energy-loss spectroscopy (EELS),hole-selective,transmission electron microscopy (TEM),molybdenum oxide (MoOx)

    更新于2025-09-12 10:27:22