研究目的
Investigating the effects of the stoichiometry value x of WOx on the performances of the hole-selective contact heterojunction silicon solar cell.
研究成果
The combination of high x and high film conductivity of WOx is required for higher device performances. The lowest x yielded a solar cell efficiency of 13.3%.
研究不足
The high stoichiometry x could lead to a low film conductivity which is detrimental for the FF, and the efficiency of the WOx/c-Si heterojunction solar cell is still considerably smaller than that of the state-of-the-art device.
1：Experimental Design and Method Selection:
The study involved a simulation to analyze the effect of x on short-circuit current (Jsc) loss and the fabrication of WOx/c-Si heterojunction solar cells with hole-selective WOx contacts using reactive magnetron sputtering.
2：Sample Selection and Data Sources:
Commercial Czochralski-grown n-type c-Si wafers were used as absorber materials.
3：List of Experimental Equipment and Materials:
A tungsten target for dc reactive magnetron sputtering, a commercial Czochralski-grown n-type c-Si wafer, and a hydrogenated intrinsic amorphous silicon layer.
4：Experimental Procedures and Operational Workflow:
The WOx films were deposited using reactive magnetron sputtering, and the stoichiometry of WOx was controlled by O2/Ar gas ratios.
5：Data Analysis Methods:
The thicknesses and optical constants of WOx films were characterized by spectroscopic ellipsometry, and the quantum efficiencies (QE) of the cells were measured using a QE measurement system.
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