Quantum Hall stripes in high-density GaAs/AlGaAs quantum wells

摘要： We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density (ne > 4 × 1011 cm?2) which is expected to favor QHS orientation along the unconventional (cid:2)1ˉ10(cid:3) crystal axis and along the in-plane magnetic ?eld B(cid:4). Surprisingly, we ?nd that at B(cid:4) = 0 QHSs in our samples are aligned along the (cid:2)110(cid:3) direction and can be reoriented only perpendicular to B(cid:4). These ?ndings suggest that high density alone is not a decisive factor for either abnormal native QHS orientation or alignment with respect to B(cid:4), while quantum con?nement of the 2DEG likely plays an important role.