研究目的
Investigating the orientation and reorientation behavior of quantum Hall stripes (QHSs) in high-density GaAs/AlGaAs quantum wells under the influence of an in-plane magnetic field.
研究成果
High electron density alone is not a decisive factor for the native orientation of QHSs or their alignment with respect to an in-plane magnetic field. Quantum confinement plays a crucial role in determining QHS alignment, suppressing mechanisms that favor alignment along the in-plane magnetic field.
研究不足
The study is limited to GaAs/AlGaAs quantum wells with specific widths and carrier densities. The effect of quantum confinement on QHS orientation and reorientation behavior is not fully understood.
1：Experimental Design and Method Selection:
The study involved measuring the longitudinal resistances, Rxx and Ryy, in GaAs/AlGaAs quantum wells with high carrier density under perpendicular and in-plane magnetic fields.
2：Sample Selection and Data Sources:
Two samples (A and B) with different quantum well widths and carrier densities were used.
3：List of Experimental Equipment and Materials:
GaAs/AlGaAs quantum wells, in-plane magnetic field setup, low-temperature measurement setup.
4：Experimental Procedures and Operational Workflow:
Measurements were conducted at T ≈ 20 mK using a four-terminal, low-frequency lock-in technique with an in-plane magnetic field introduced by tilting the sample.
5：Data Analysis Methods:
The resistance anisotropy AR ≡ (Rxx ? Ryy)/(Rxx + Ryy) was calculated to analyze the orientation and reorientation of QHSs.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
