- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Effects of postmetallization annealing on interface properties of Al <sub/>2</sub> O <sub/>3</sub> /GaN structures
摘要： In this study, we investigated the e?ects of postmetallization annealing (PMA) on the interface properties of GaN metal–oxide–semiconductor (MOS) structures using Al2O3 prepared by atomic layer deposition. Excellent capacitance–voltage (C–V ) characteristics without frequency dispersion were observed in the MOS sample after PMA in N2 ambient at 300–400 °C. The PMA sample showed state densities of only at most 4 ' 1010 cm%1 eV%1. A geometric phase analysis of transmission electron microscopy images after PMA revealed a uniform distribution of the lattice constant near the Al2O3/GaN interface, leading to the improved bond termination and bonding order con?guration along the interface.
关键词： atomic layer deposition,capacitance–voltage characteristics,Al2O3/GaN structures,interface properties,postmetallization annealing
更新于2025-09-23 15:21:01
-
[IEEE ESSDERC 2018 - 48th European Solid-State Device Research Conference (ESSDERC) - Dresden, Germany (2018.9.3-2018.9.6)] 2018 48th European Solid-State Device Research Conference (ESSDERC) - Gated Four-Probe Method to Evaluate the Impact of SAM Gate Dielectric on Mobility in MoS2 FET
摘要： This study reports the interfacial engineering by means of SAM (Self-assembled monolayer)-based gate dielectric on channel mobility in molybdenum disulfide (MoS2) field-effect transistors (FETs). A gated four-probe method was implemented to eliminate the effect of contact resistance on channel mobility. The formation of SAM significantly plays an important role in the improvement of channel mobility as high as 19 cm2/Vs in MoS2 FETs because the superior interfacial properties can be realized in MoS2/SAM structure. This study opens up interesting direction of interface engineering for research in the applications and developments of 2-dimensional materials-based thin film devices.
关键词： FETs,Interface properties,Channel mobility,Self-assembled monolayer,MoS2
更新于2025-09-23 15:21:01
-
Controlling ZnSe/GaAs interface properties: The role of elemental exposure and photon irradiation during growth initiation
摘要： Incorporating dissimilar semiconductors into a single platform can offer additional degrees of freedom for optoelectronic device design. However, bonding of elements with mixed valence at heterovalent interfaces often leads to defect formation and poor material quality. Using ZnSe/GaAs as a model system, we investigate the use of above-bandgap photon irradiation in combination with elemental surface treatments as a route to modify the interface properties. We find that this approach produces large changes in the behavior of the interfaces. Specifically, treating the GaAs surface with light and a short exposure to Se flux results in strong excitonic emission from both layers and an abrupt interface between them. We propose that these improvements arise from controlled desorption of As atoms from the GaAs surface and the subsequent Se enrichment of the interface. These results suggest that illumination with above-bandgap photons and proper choice of elemental exposure prior to heterovalent epitaxial layer growth may aid the synthesis of heterovalent semiconductor heterostructures.
关键词： interface properties,photon irradiation,heterovalent interfaces,elemental exposure,ZnSe/GaAs
更新于2025-09-04 15:30:14