研究目的
Investigating the impact of SAM (Self-assembled monolayer)-based gate dielectric on channel mobility in MoS2 field-effect transistors (FETs).
研究成果
The formation of SAM significantly improves the channel mobility in MoS2 FETs by enhancing the interfacial properties. A gated four-probe method effectively eliminates the effect of contact resistance, revealing a channel mobility as high as 19 cm2/Vs with SAM/AlOx gate dielectric.
研究不足
The study does not mention the control over the layer number of the MoS2 flakes, which could affect the results. Also, the impact of SAM on devices with different layer numbers of MoS2 is not explored.
1：Experimental Design and Method Selection:
The study implemented a gated four-probe method to evaluate the channel mobility and contact resistance in FET architecture, concurrently.
2：Sample Selection and Data Sources:
Mechanically exfoliated MoS2 flakes were used.
3：List of Experimental Equipment and Materials:
Heavily-doped p-type silicon (p+-Si) substrate, SiO2, AlOx, Al, Au, ODPA (octadecylphosphonic acid), PDMS (poly(dimethylsiloxane)).
4：Experimental Procedures and Operational Workflow:
The fabrication process included cleaning, oxidation, deposition, lift-off, plasma exposure, SAM formation, MoS2 transfer, and annealing.
5：Data Analysis Methods:
The channel conductivity and mobility were evaluated using specific equations derived from the gated four-probe method measurements.
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p+-Si substrate
Used as the base substrate for device fabrication.
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SiO2
Formed by dry oxidation on the p+-Si substrate, serves as an insulating layer.
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AlOx
Deposited on SiO2 by RF sputtering, acts as a seed layer for SAM formation.
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Al
Used for gate electrode and as an adhesion layer between Au and AlOx.
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Au
Used for source/drain contacts and voltage probes.
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ODPA
Used for SAM formation on AlOx surface.
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PDMS
Used for transferring MoS2 flakes onto the substrate.
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