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- 摘要
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- 实验方案
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[IEEE 2019 IEEE 13th International Conference on ASIC (ASICON) - Chongqing, China (2019.10.29-2019.11.1)] 2019 IEEE 13th International Conference on ASIC (ASICON) - Design of the admittance detecting circuit for silicon waveguides using the capacitor-integration method
摘要： The in?uences of the intermediate band (IB) ?lling, the absorption coef?cient constants, and the IB position on the ef?ciency of a quantum dot intermediate band solar cell (QD-IBSC) are investigated considering the spatial variation of subbandgap generation rates. A new de?nition of optimal intermediate band ?lling is proposed. A mathematical model is developed to optimize the intermediate band solar cell (IBSC) structure under idealized conditions, which calculates the optimal ratio of the subbandgap absorption coef?cient constants and the optimal position of IB.
关键词： optimal ?lling,Intermediate band solar cell (IBSC),absorption coef?cients,IB position,conversion ef?ciency
更新于2025-09-23 15:21:01
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[IEEE IGARSS 2019 - 2019 IEEE International Geoscience and Remote Sensing Symposium - Yokohama, Japan (2019.7.28-2019.8.2)] IGARSS 2019 - 2019 IEEE International Geoscience and Remote Sensing Symposium - GLRT Detectors for Airborne Radar Based on Knowledge-Aided and Compressive Sensing
摘要： The influences of the intermediate band (IB) filling, the absorption coefficient constants, and the IB position on the efficiency of a quantum dot intermediate band solar cell (QD-IBSC) are investigated considering the spatial variation of subbandgap generation rates. A new definition of optimal intermediate band filling is proposed. A mathematical model is developed to optimize the intermediate band solar cell (IBSC) structure under idealized conditions, which calculates the optimal ratio of the subbandgap absorption coefficient constants and the optimal position of IB.
关键词： optimal filling,conversion efficiency,Intermediate band solar cell (IBSC),IB position,absorption coefficients
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - High-Efficiency InAs-InGaAs Quantum Dash Solar Cells Developed Through Current Constraint Engineering
摘要： In principle, quantum-dot intermediate band solar cell (QD-IBSC) operates at a higher current density than a III-V multijunction solar cell (MJSC). Due to this inherent property, heat management becomes important when it is operated under a high concentrated illumination. In this work, we propose one way to circumvent this issue, where a wide bandgap cell is placed on top of QD-IBSC, which acts as a current constraint cell, but instead leads to a higher VOC. We demonstrate a 32.1% efficiency under 225 suns with a bonded InGaP/GaAs widegap cell // InAs-InGaAs QDSC configuration.
关键词： wide bandgap cell,efficiency,VOC,III-V multijunction solar cell,concentrated illumination,quantum-dot intermediate band solar cell,MJSC,QD-IBSC,current constraint cell,heat management
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Investigation on Temperature Coefficients of Crystalline Silicon Solar Modules before and after Potential-induced Degradation
摘要： The influences of the intermediate band (IB) filling, the absorption coefficient constants, and the IB position on the efficiency of a quantum dot intermediate band solar cell (QD-IBSC) are investigated considering the spatial variation of subbandgap generation rates. A new definition of optimal intermediate band filling is proposed. A mathematical model is developed to optimize the intermediate band solar cell (IBSC) structure under idealized conditions, which calculates the optimal ratio of the subbandgap absorption coefficient constants and the optimal position of IB.
关键词： optimal filling,conversion efficiency,Intermediate band solar cell (IBSC),IB position,absorption coefficients
更新于2025-09-19 17:13:59
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Advanced material system for the design of an intermediate band solar cell: Type-II CdTe quantum dots in a ZnCdSe matrix
摘要： We explore CdTe fractional monolayer quantum dots (QDs) in a ZnCdSe host matrix for potential application in an intermediate band solar cell device. Careful consideration has been taken during the initiation of the growth process of QDs by migration enhanced epitaxy, in order to avoid the formation of undesirable interfacial layers that can form due to the lack of common anion between the two materials. A superlattice structure of 100 periods of alternating QD and spacer layers is analyzed by high-resolution X-ray diffraction (XRD) and photoluminescent (PL) spectroscopy. Simple arguments are used following continuum elastic theory to deduce the size of the dots and the strain within the superlattice from XRD data. This is further verified using PL and used in the energy calculations that yield the values of the intermediate band energy. The results suggest that the optimized materials are highly suitable for these high efficiency solar cells.
关键词： migration enhanced epitaxy,ZnCdSe,CdTe,quantum dots,photoluminescent spectroscopy,intermediate band solar cell,high-resolution X-ray diffraction
更新于2025-09-12 10:27:22
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Intermediate band solar cell materials through the doping of group-VA elements (N, P, As and Sb) in Cu <sub/>2</sub> ZnSiSe <sub/>4</sub>
摘要： The electronic structure and optical properties of group-VA (N, P, As, and Sb)-doped Cu2ZnSiSe4 alloys have been studied using a hybrid functional through density functional theory calculations. The minor lattice distortion and small formation energy indicate that synthesis of these alloys is highly possible in experiment. For each doped alloy, an isolated and partially filled intermediate band (IB) appears in its band structure. The doping-induced IB is mainly contributed by the s states of the doped group-VA atom and the p states of four neighboring Se atoms, and slightly by the d states of eight Cu atoms. The existence of an IB obviously enhances the absorption coefficient with two additional absorption peaks in the visible light range. For P, As and Sb-doped Cu2ZnSiSe4 alloys, not only the bandgap between the valence band maximum and the conduction band minimum but also the sub bandgap between the valence band maximum and the IB are very close to the optimal values for visible light absorption. Therefore, these alloys are recommended as good candidates for IB solar cell materials.
关键词： intermediate band solar cell,optical properties,Cu2ZnSiSe4,group-VA elements,density functional theory
更新于2025-09-11 14:15:04
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New strategies for colloidal-quantum-dot-based intermediate-band solar cells
摘要： The intermediate-band solar cell (IBSC) concept promises to increase the efficiency limit in a single-junction solar cell through the absorption of below-bandgap-energy photons. Despite their operating principle having been proposed over 20 years ago, IBSCs have not delivered on this promise yet, and the devices fabricated so far, mainly based on embedded epitaxial quantum dots, have instead operated with lower efficiency than conventional solar cells. A new paradigm, based on the exploitation as the intermediate band of the intragap states naturally occurring in the density functional theory description of colloidal (i.e., chemically synthesized) quantum dots, was suggested recently. Here, we revisit this intriguing concept unveiling its shortcomings and propose two alternative schemes: in the first, the localized electron surface trap states, ubiquitously found in commonly synthesized colloidal quantum dots, are used as intermediate bands in strongly coupled films made of small InAs nanocrystals and, in the second scheme, the intermediate band is provided by the conduction-band-minimum-derived miniband in films of larger InAs nanocrystals. Both schemes yield estimated limiting IBSC efficiencies exceeding Shockley-Queisser’s limit for a single absorber.
关键词： efficiency,InAs nanocrystals,intermediate-band solar cell,colloidal quantum dots,Shockley-Queisser limit
更新于2025-09-11 14:15:04