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The Effect of Transparent Conductive Oxide Substrate on the Efficiency of SnGe-perovskite Solar Cells
摘要： The efficiency of Sn-perovskite solar cells has been dramatically improved by adopting the inverted structure solar cells and is expected to reach the efficiency of lead-based perovskite solar cell. We have observed fluctuations in the efficiency of the same perovskite material due to the type of TCO substrates. In this study, we investigated the influence of TCO substrates on the solar cell characteristics of SnGe-perovskite solar cells. It was found that the efficiency of the SnGe-perovskite solar cell is better with fluorine-doped tin oxide (FTO) substrate (9.24%) than indium-doped tin oxide (ITO) substrate (7.72%). The improvement of the efficiency of the cell with FTO substrate is contributed by the improvement in the short-circuit current Jsc and Voc. The high transmittance of FTO substrate enhanced the Jsc while the Voc is influenced by the Fermi level of the transparent conductive oxide film. Although there is a difference in the surface roughness between TCO substrates, there is no direct influence on the device performance that can be observed.
关键词： Fluorine-doped tin oxide,Transparent conductive film,Inverted structure,Indium-doped tin oxide,Perovskite solar cells,Pb free
更新于2025-09-12 10:27:22
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An efficient cadmium free inverted red quantum dot light emitting diodes
摘要： Here, we report an efficient inverted red indium phosphide (InP) comprised QD (InP/ZnSe/ZnS, core/shell structure) light-emitting diode (QLED) by modulating an interfacial contact between the electron transport layer and emissive InP-QDs and applying self-aging approach. The red InP-QLED with optimized interfacial contact exhibits a significant improvement in maximum external quantum efficiency and current efficiency from 4.42% to 10.2% and 4.70 cd/A to 10.8 cd/A, respectively, after 69 days of self-aging, which is an almost 2.3-fold improvement compared with the fresh device. The analysis indicates the consecutive reduction in electron injection and accumulation in the emissive QD due to changes in the conduction band minimum of ZnMgO (0.1 eV after 10 days of storage times) through a downward vacuum level shift according to the aging times. During the device aging periods, the oxygen vacancies of ZnMgO reduces, which leads to lower the conductivity of ZnMgO. As a result, the improvement of charge balance in the device with the suppression of exciton quenching at the interface of ZnMgO and InP-QD.
关键词： Cadmium-free quantum dots,charge balance,charge carrier injection layers,inverted structure,light emitting diode
更新于2025-09-11 14:15:04
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Optimization of a Solution-Processed Quantum-Dot Light-Emitting-Diode with an Inverted Structure
摘要： Colloidal quantum-dot based light-emitting diodes (QD-LEDs) are attractive for use in display devices because of the remarkable electrical and optical characteristics of colloidal quantum dots. An inverted structure may be one method to achieve the necessary multilayer device structures in QD-LEDs. In this study, each layer of an inverted-structure QD-LED was optimized. The effect of the solvent on the hole transfer layer was investigated, along with the effect of the concentration of the electron transfer layer, the effect of the co-solvent on the hole transfer layer, and the effect of the concentration and solvent of quantum dot layer. The quantum dots and ZnO NPs were synthesized as the emitting layer and carrier transporting layer using a solution-mediated process. The inverted QD-LED device showed a luminance of 3,762 cd/m2, current ef?ciency of 1.86 cd/A, and EQE of 1.18%.
关键词： Inverted Structure,Solution-Process,Quantum Dot Light Emitting Diode (QD-LED)
更新于2025-09-04 15:30:14