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oe1(光电查) - 科学论文

42 条数据
?? 中文(中国)
  • Synthesis of amorphous carbon nanofibers on a surface of commercial polymers under the action of a high power ion beam of nanosecond duration

    摘要: The irradiation of various commercial polymers (chlorinated polyvinyl chloride, polyvinyl chloride, polyvinyl alcohol, polymethyl methacrylate) by a high-power ion beam of nanosecond duration has been investigated. The amorphous carbon nanofibers formation was detected on the surface of low-cost commercial polymers (chlorinated polyvinyl chloride, polyvinyl chloride) containing a catalyst under the high power ion beam irradiation at room temperature. Various iron compounds (organic and inorganic) were used as catalytic additions. The electron microscopy (scanning and transmission) with an energy dispersive analyzer and Raman spectroscopy were used to investigate the morphologies and structure of irradiated polymers. Carbon nanofibers (CNFs) had a most probable diameter in the range 50-90 nm and a maximum length of up to 10 μm. The maximum CNFs growth rate was estimated as 160 μm/μs. A possible growth mechanism for CNFs is discussed.

    关键词: electron microscopy,amorphous carbon nanofibers,catalytic additions,Raman spectroscopy,high-power ion beam,commercial polymers

    更新于2025-09-04 15:30:14

  • Atomic layer etching of chrome using ion beams

    摘要: In this study, two Cr atomic layer etching (ALE) methods have been applied for the precise control of Cr etching. The first one involves O radical adsorption followed by Cl+ ion desorption (ALE with chemical ion desorption; chemical anisotropic ALE), and the second one involves Cl/O radical adsorption followed by Ar+ ion desorption (ALE with physical ion desorption; physical anisotropic ALE). Their effects on Cr etch characteristics were also investigated. For both the ALE methods, saturated Cr etch depth/cycle of 1.1 and 1.5 ? /cycle were obtained for the chemical and physical anisotropic ALE, respectively, while maintaining near-infinite etch selectivities with various Si-based materials like silicon, silicon dioxide, and silicon nitride. The ALE technique can be used to precisely control the thickness of materials, including metals such as Cr, without any surface damage.

    关键词: etch selectivity,adsorption,atomic layer etching,x-ray photoelectron spectroscopy,ion beam,chrome

    更新于2025-09-04 15:30:14