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Site-controlled formation of single Si nanocrystals in a buried SiO <sub/>2</sub> matrix using ion beam mixing
摘要： For future nanoelectronic devices – such as room-temperature single electron transistors – the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-energy Si+ or Ne+ ion beam mixing of Si into a buried SiO2 layer followed by thermally activated phase separation. Binary collision approximation and kinetic Monte Carlo methods are conducted to gain atomistic insight into the influence of relevant experimental parameters on the Si NC formation process. Energy-filtered transmission electron microscopy is performed to obtain quantitative values on the Si NC size and distribution in dependence of the layer stack geometry, ion fluence and thermal budget. Employing a focused Ne+ beam from a helium ion microscope, we demonstrate site-controlled self-assembly of single Si NCs. Line irradiation with a fluence of 3000 Ne+/nm2 and a line width of 4 nm leads to the formation of a chain of Si NCs, and a single NC with 2.2 nm diameter is subsequently isolated and visualized in a few nanometer thin lamella prepared by a focused ion beam (FIB). The Si NC is centered between the SiO2 layers and perpendicular to the incident Ne+ beam.
关键词： phase separation,Monte Carlo simulations,single electron transistor,ion beam mixing,helium ion microscopy
更新于2025-11-21 11:20:48
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Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup
摘要： We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films. The AlN thin films were deposited by a reactive sputtering technique at substrate temperatures up to 330 °C using a dual Kaufman ion-beam source setup. We deposited the AlN on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film and compared their crystallographic, optical, and piezoelectric properties. The AlN thin films deposited on the (001) preferentially oriented Ti thin films have the highest crystallographic quality. The stress-free AlN reached a high value of the piezoelectric coefficient d33 = (7.33 ± 0.08) pC·N?1. The properties of the AlN thin film prepared at such low temperatures are suitable for numerous microelectromechanical systems, piezoelectric sensors, and actuators monolithically integrated with complementary metal-oxide-semiconductor signal-processing circuits.
关键词： Ellipsometry,Aluminum nitride thin film,Optical properties,d33 piezoelectric coefficient,Kaufman ion-beam source,Ion-beam sputtering deposition,(001) preferential orientation,X-ray diffraction
更新于2025-09-23 15:23:52
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Focused Ion Beam
摘要： Hybrid superconducting-spin systems offer the potential to combine highly coherent atomic quantum systems with the scalability of superconducting circuits. To fully exploit this potential requires a high-quality-factor microwave resonator, tunable in frequency and able to operate at magnetic fields optimal for the spin system. Such magnetic fields typically rule out conventional Al-based Josephson-junction devices that have previously been used for tunable high-Q microwave resonators. The larger critical field of Nb allows microwave resonators with large field resilience to be fabricated. Here we demonstrate how constriction-type weak links, patterned in parallel into the central conductor of a Nb coplanar resonator with a neon focused ion beam, can be used to implement a frequency-tunable resonator. We study transmission through two such devices and show how they realize high-quality-factor, tunable, field-resilient devices that hold promise for future applications coupling to spin systems.
关键词： magnetic field resilience,focused ion beam,superconducting,tunable resonator,Nb,nano-SQUID
更新于2025-09-23 15:23:52
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The role of incidence angle in the morphology evolution of Ge surfaces irradiated by medium-energy Au ions
摘要： Germanium (Ge) surfaces have been irradiated with 26 keV gold (Au) ions at a constant fluence and at incidence angles varying from 0° to 85°. The evolution of the emerging nanostructures is studied by atomic force microscopy (AFM), scanning electron microscopy, x-ray photoelectron spectroscopy (XPS), and cross-sectional transmission electron microscopy. The obtained results are compared with findings reported in the literature. Periodic rippled patterns with the wave vector parallel to the projection of the ion beam direction onto the Ge surface develop between 30° and 45°. From 75° the morphology changes from parallel-mode ripples to parallel-mode terraces, and by further increasing the incidence angle the terraces coarsen and show a progressive break-up of the front facing the ion beam. No perpendicular-mode ripples or terraces have been observed. The analysis of the AFM height profiles and slope distributions shows in the 45°–85° range an angular dependence of the temporal scale for the onset of nonlinear processes. For incidence angles below 45°, the surface develops a sponge-like structure, which persists at higher incidence angles on the top and partially on the face of the facets facing the ion beam. The XPS and the energy-dispersive x-ray spectroscopy evidence the presence of Au nano-aggregates of different sizes for the different incidence angles. This study points out the peculiar behavior of Ge surfaces irradiated with medium-energy Au ions and warns about the differences to be faced when trying to build a universal framework for the description of semiconductor pattern evolution under ion-beam irradiation.
关键词： ion beam irradiation,gold ions,terraces,germanium,binary system,sponge-like structures,ripples
更新于2025-09-23 15:23:52
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Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs
摘要： This paper presents the impact of a short-circuit event on the gate reliability in planar SiC MOSFETs, which becomes more critical with increased junction temperature and higher bias voltages. The electrical waveforms indicate that a gate degradation mechanism takes place, showing a large gate leakage current that increases as the gate degrades more and more. A failure analysis has been performed on the degraded SiC MOSFET and then compared to the structure of a new device to identify possible defects/abnormalities. A Focused-Ion Beam cut is performed showing a number of differences in comparison to the new device: (i) cracks between the poly-silicon gate and aluminium source, (ii) metal particles near the source contact, and (iii) alterations in the top surface of the aluminium source. The defects have been correlated with the increase in gate-leakage current and drain-leakage current.
关键词： Focused-Ion Beam,Short circuit,Gate-oxide breakdown,Gate oxide,Degradation,Defects,Reliability,SiC MOSFET,Failure analysis,SEM
更新于2025-09-23 15:22:29
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Voids in Kesterites and the Influence of Lamellae Preparation by Focused Ion Beam for Transmission Electron Microscopy Analyses
摘要： Kesterite solar cells based on Cu2 ZnSnS4 and Cu2 ZnSnSe4 (CZTSe) are potential future candidates to be used in thin-film solar cells. The technology still has to be developed to a great extent and for this to happen, high levels of confidence in the characterization methods are required, so that improvements can be made on solid interpretations. In this study, we show that the interpretations of one of the most used characterization techniques in kesterites, scanning transmission electron microscopy (STEM), might be affected by its specimen preparation when using focused ion beam (FIB). Using complementary measurements based on scanning electron microscopy and Raman scattering spectroscopy, compelling evidence shows that secondary phases of ZnSe mixed in the bulk of CZTSe are the likely cause of the appearance of voids in STEM lamellae. Sputtering simulations support this interpretation by showing that Zn in a ZnSe matrix is preferentially sputtered compared with any metal atom in a CZTSe matrix.
关键词： Cu2 ZnSn(S, Se)4 (CZTSSe),thin-film solar cells,transmission electron microscopy (TEM),focused ion beam (FIB),kesterite
更新于2025-09-23 15:22:29
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Laser and ion beams graphene oxide reduction for microelectronic devices
摘要： Reduced graphene oxide (rGO) is a two-dimensional material, which is attracting increasing attention due to its special properties. It can be obtained by laser or ion beam irradiations of pristine graphene oxide (GO). It shows high mechanical resistance, considerable electric and thermal conductivity. All these rGO characteristics together with the high number of molecular species that can be embedded between its layers, make graphene oxide a potential material for electronic sensors or efficient support on which conductive strips, condensers, and micrometric electronic devices can be designed. In particular, as it is described in this paper, it is possible to carry out high spatial resolution lithography in GO by using a focused laser or micro ion beam in order to design macro, micro, and submicron geometrical structures. The use of the reduced graphene oxide for the laser and ion beam fabrication of electrical resistances and capacitances is presented.
关键词： ion beam,lithography,ion beam reduction,electronic device,Graphene oxide,laser
更新于2025-09-23 15:21:01
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Influence of ion species of AuSi liquid metal alloy source-focused ion beam on SiO2/Si nanopatterning
摘要： This work investigates the influence of the ion source (Au+ and Si+2 ions) of liquid metal alloy source-focused ion beam on the nanopattering. Two sets of SiO2/Si nanopatterns with a width of 450 nm on Silicon on insulator (SOI) substrate are fabricated by 30 keV Au+ and Si+2 ions, respectively. To study this effect, the sputtering yield is calculated using the volume loss method from atomic force microscopy (AFM) profiles obtained for each set. The results of the sputtering yield were compared with theoretical results calculated from Yamamura model for normal incidence for validation. The comparison showed a good agreement between the two results with a relative difference of about 5.3 % obtained using Si+2 ions.
关键词： Liquid metal alloy source-focused ion beam,Milling,Sputtering yield,Nanopattering
更新于2025-09-23 15:21:01
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Amorphous Silicon with Extremely Low Absorption: Beating Thermal Noise in Gravitational Astronomy
摘要： Amorphous silicon has ideal properties for many applications in fundamental research and industry. However, the optical absorption is often unacceptably high, particularly for gravitational-wave detection. We report a novel ion-beam deposition method for fabricating amorphous silicon with unprecedentedly low unpaired electron-spin density and optical absorption, the spin limit on absorption being surpassed for the first time. At low unpaired electron density, the absorption is no longer correlated with electron spins, but with the electronic mobility gap. Compared to standard ion-beam deposition, the absorption at 1550 nm is lower by a factor of ≈100. This breakthrough shows that amorphous silicon could be exploited as an extreme performance optical coating in near-infrared applications, and it represents an important proof of concept for future gravitational-wave detectors.
关键词： amorphous silicon,thermal noise,gravitational-wave detection,ion-beam deposition,optical absorption
更新于2025-09-23 15:21:01
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All-optical cascaded ion acceleration in segmented tubes driven by multiple independent laser pulses
摘要： A scheme to achieve all-optical cascaded ion acceleration driven by intense laser pulses is proposed, where a series of segmented tubes are used. First, the high-flux ion beam is produced via collisionless shock acceleration in the first tube segment driven by an intense picosecond laser, and then undergoes successive post-accelerations in a cascaded manner via magnetic vortex acceleration driven by low-power terawatt-femtosecond lasers when it propagates through each subsequent tube segment into the vacuum gaps between them. By controlling the delay of the femtosecond lasers as well as the vacuum gap between the tube segments, not only the maximum energy of the ion beam can be boosted, but also its energy spectrum can be tuned to be quasi-monoenergetic. Two-dimensional particle-in-cell simulations show that the maximum energy of the primary proton beam, produced by the picosecond laser at intensity 8.8 × 1019 W cm?2, can be boosted from 123 to 181 MeV with only two post-accelerations by using 100 fs lasers at the same intensities.
关键词： magnetically-induced ion acceleration,all-optical cascaded ion acceleration,laser-driven ion acceleration,ion beam spectrum tuning
更新于2025-09-23 15:19:57