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Isotropic silicon etch characteristics in a purely inductively coupled SF <sub/>6</sub> plasma
摘要： The characteristics of isotropic etching of silicon in a purely inductively coupled SF6 plasma are quantitatively studied. Since the etch results are strongly dependent on mask features, the authors investigated both large area and narrow trench etch characteristics. Circles of diameter 500 μm were used as a proxy for unpatterned surfaces and etched for different durations to establish the material etch rate and surface roughness. The average etch rate using the chosen recipe was found to be 2.27 μm/min. Arrays of narrow trenches ranging from 8 to 28 μm were also etched to analyze the effect of trench size on etch rate and degree of anisotropy. The etch rate of the trenches was found to strongly decrease with decreasing trench width. The results demonstrate that isotropic SF6 etch can be readily used as a replacement for more exotic silicon vapor phase etch chemistries such as XeF2.
关键词： etch rate,silicon,isotropic etching,SF6 plasma,inductively coupled plasma,anisotropy
更新于2025-09-12 10:27:22
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A multi-step etch method for fabricating slightly tapered through-silicon vias based on modified Bosch process
摘要： In this paper, a multi-step etching method based on Bosch process was investigated to fabricate a slightly tapered via. The diameter of vias was scaled from 40 to 100 lm. Isotropic etching step was added into Bosch process to control the angle of the tapered vias. The slope angle could be adjusted by changing the time settings of isotropic etching step. The in?uence of the platen temperature was also studied. The passivation and etching steps are extremely sensitive to temperature. Silicon grass could be formed at low temperature. The two different processes of isotropic SF6 etching and Cl2/HBr etching were also compared. The wrinkles and cracks were observed on the surface after treatment with isotropic SF6 etching. The Cl2/HBr etching method is much better for removing the scallops.
关键词： platen temperature,Cl2/HBr etching,slightly tapered through-silicon vias,multi-step etch method,SF6 etching,isotropic etching,modified Bosch process
更新于2025-09-04 15:30:14