研究目的
Investigating the characteristics of isotropic etching of silicon in a purely inductively coupled SF6 plasma, focusing on etch rate, surface roughness, and degree of anisotropy.
研究成果
The isotropic SF6 etching of silicon is a viable alternative to other isotropic etch processes, offering comparable or faster etch rates than XeF2 vapor etch processes. The etch characteristics are strongly dependent on mask features, with etch rates decreasing with decreasing trench width.
研究不足
The study focuses on a specific set of etching parameters and does not explore the effects of varying these parameters. The use of chromium-on-oxide masks may introduce additional complexities not present with other mask materials.
1：Experimental Design and Method Selection:
The study was conducted in three parts to measure the etch rate in large area circles, investigate the effect of feature size on the etch, and obtain the etch rate without the balancing effect of the carrier wafer.
2：Sample Selection and Data Sources:
Thermally oxidized 4 in. silicon wafers with a 290 nm oxide thickness were used. Samples were prepared with chromium-on-oxide masks and patterned with circles and lines.
3：List of Experimental Equipment and Materials:
Oxford Instruments PlasmaPro 100 Cobra300 ICP-RIE system, Bruker Dektak profilometer, Veeco Atomic Force Microscope.
4：Experimental Procedures and Operational Workflow:
Samples were etched using the same recipe in the ICP-RIE system, with parameters set to 30 mT chamber pressure, 20°C substrate temperature, 2000 W ICP power, 0 V bias, and 50 SCCM SF6 flow rate.
5：Data Analysis Methods:
The width and depth of features were measured before and after etching to obtain postetch dimensions. Surface roughness measurements were conducted using AFM.
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