- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Strategically Modulating Carriers and Excitons for Efficient and Stable Ultrapurea??Green Fluorescent OLEDs with a Sterically Hindered BODIPY Dopant
摘要： Ultrapure colors are vital for displays to obtain the highly desired wide color-gamut. Till now, only boron-dipyrromethene derivatives (BODIPYs) have demonstrated ultrapure full-colors but suffer from low excitons utilization efficiency as dopants in organic light-emitting diodes. It is proposed here that with a thermally activated delayed fluorophore to sensitize BODIPYs, all excitons can be recycled, which, still, is challenged by exciton loss through Dexter energy transfer (DET) from sensitizer to dopant and direct charge trapping on BODIPYs. Hence, a sterically hindered BODIPY-type dopant with a bulk substituent on the meso-position is developed to suppress DET, exhibiting a high photo-luminance quantum yield of 98% and a small full width at half maximum of 28 nm. Moreover, the device structure is elaborately designed, successfully modulating carriers and excitons to avoid charge trapping on dopant and also trigger multiple-sensitizing processes to reduce exciton loss. Consequently, a state-of-the-art maximum external quantum efficiency/power efficiency of 19.0%/85.7 lm W?1 are realized together with an ultrapure-green emission of Commission Internationale de l’Eclairage coordinates of (0.26, 0.67) and a long half-lifetime of 2947 h at an initial luminance of 1000 cd m?2.
关键词： carrier modulation,ultrapure green emission,exciton modulation,high-efficiency devices,fluorescent organic light-emitting diodes,long-lifetime devices
更新于2025-09-23 15:21:01
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Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates
摘要： Controlled growth of InGaN quantum dots (QDs) using photoelectrochemically (PEC) etched InGaN QD templates is demonstrated. The InGaN QDs are grown by a self-assembly (SA) method using metal-organic chemical vapor deposition on templates consisting of planar GaN and PEC etched InGaN QDs for comparison. The InGaN QD templates are formed using quantum-size-controlled PEC etching of planar InGaN layers on GaN, which produces controlled QD radiuses with a statistical mean (μ) of 17.3 nm and standard deviation (σ) of 6.2 nm, and densities of 1.2 × 1010 cm?2. The PEC etched QDs are capped with an AlGaN interlayer and GaN barrier layer to recover a planar surface morphology for subsequent SA growth of QDs. The PEC QD templates behave as seeds via localize strain near the PEC QDs which provide improved control of the SA QD growth. The SA grown QDs on PEC QD templates are smaller and have controlled radiuses with μ = 21.7 nm and σ = 11.7 nm compared to the SA QDs on planar GaN templates with radiuses of μ = 37.8 nm and σ = 17.8 nm. Additionally, the dot densities of the SA QDs on PEC QD templates are ~3 times higher and more closely match the underlying densities of the template (8.1 × 109 cm?2). Multiple quantum dots (MQDs) are also grown on both templates that consist of 4 periods of SA QDs and AlGaN/GaN interlayer/barrier layers. The MQDs grown on PEC QD templates better retain their planarized smooth surfaces after barrier layer growth, and exhibit ~3 times stronger PL intensity at room temperature compared to MQDs grown on planar GaN.
关键词： Metalorganic chemical vapor deposition,Nitrides,Quantum dots,Light emitting diodes,Atomic force microscopy,Photoelectrochemical etching
更新于2025-09-23 15:21:01
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Mn-doped 2D Sn-based perovskites with energy transfer from self-trapped excitons to dopants for warm white light-emitting diodes
摘要： Mn-doped 2D perovskite powders are promising phosphors for warm white light-emitting diodes (LEDs). However, it remains a challenge to solve the problem of lead toxicity and improve photoluminescence quantum yields (PLQYs). Here, we have successfully prepared Mn-doped 2D Sn-based perovskite materials ((C8H17NH2)2Sn1-xMnxBr4). The PLQYs of (C8H17NH2)2Sn1-xMnxBr4 (x = 0.26) powders reach up to 42%. The as-prepared (C8H17NH2)2Sn1-xMnxBr4 exhibit a single broad photoluminescence (PL) band, differing from the dual peaks of Mn-doped lead halide perovskite quantum dots. Theoretical conclusions and experimental results show the competitive relationship between self-trapped excitons (STEs) emission from the host crystal and dopant Mn d-d transition emission. With Mn dopant concentration increasing, the PL spectra exhibit red shifts and the full width at half-maximum (FWHM) turns larger, which is constructive for warm white LEDs. The fabricated warm white LEDs based on (C8H17NH2)2Sn1-xMnxBr4 show warm white light correlated color temperature (CCT, 3542 K) and high color-rendering index (Ra, 88.12). Our work provides new possibilities for optoelectronic devices based on lead-free perovskite materials.
关键词： self-trapped excitons,Mn-doped,photoluminescence quantum yields,2D Sn-based perovskites,warm white light-emitting diodes
更新于2025-09-23 15:21:01
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850 nm Pure Near-Infrared Emitting Iridium Complex for Solution-processed Organic Light-Emitting Diodes
摘要： High-performance pure near-infrared organic light-emitting materials and devices with full emission over 700 nm are still rare, though urgently needed. Iridium(III) complexes have been proven to be an important class of NIR emitters. Herein, we report a new NIR homoleptic Ir(III) complex, tris[1,4-di(5-n-octylthiophen-2-yl)benzo[g]phthalazine] iridium(III) (Ir(dotbpa)3), with full emission beyond 700 nm and Iridium mass content as low as 10 wt%. Thanks to the introduction of flexible n-octyl groups, Ir(dotbpa)3 shows greatly improved solubility and excellent solution-processability in comparison with its counterpart Ir(dtbpa)3. By employing a multifunctional host, solution-processed NIR-OLEDs were fabricated with a simple structure of only three organic layers and demonstrated pure NIR emission starting from 725 nm and peaking at 850 nm with maximum external quantum efficiency of 0.17%, which is the first example to achieve pure NIR-OLEDs based on Ir(III) emitters.
关键词： Pure NIR emission,Near-infrared,Solution-processed,Iridium(III) complex,Organic light-emitting diodes
更新于2025-09-23 15:21:01
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Synergetic interface and morphology modification to achieve highly efficient solution-processed sky-blue organic light-emitting diodes
摘要： Solution-processed organic light-emitting diodes (OLEDs), especially blue OLEDs, generally suffer from the low efficiency. Herein, we report an efficient approach to achieve high efficiency by synergetic interface and morphology modification with a polymer, Poly(9-vinylcarbazole) (PVK). Sky-blue thermally activated delayed fluorescent (TADF) material, 10-(4-(4,6-diphenyl-1,3,5- triazin-2-yl)phenyl)-10H- spiro[acridine-9,9-fluorene] (SpiroAC-TRZ), is used as the emitter. The incorporation of PVK thin layer at the hole injection layer/emission layer (EML) interface and a small amount of PVK inner the EML modify the carrier behaviors at the interface and improve the EML morphology. As a result, balanced carrier distribution and reduced carrier recombination are realized at the interface and inner the EML. Through these strategies, the maximum external quantum efficiency and current efficiency of the optimal OLED achieve 25.1% and 53.5 cd/A. To the best of our knowledge, the efficiencies are the highest values ever achieved by the solution-processed sky-blue TADF OLEDs.
关键词： Blue organic light-emitting diodes,Thermally activated delayed fluorescence,High efficiency,All-solution process,Film morphology
更新于2025-09-23 15:21:01
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Low-temperature growth of n<sup>++</sup>-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes
摘要： We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n++-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (< 800 °C) was used to hinder Mg-passivation by hydrogen in the p++-GaN top surface. This allows achieving low-resistivity TJs without the need for post-growth Mg activation. TJs are further improved by inserting a 5 nm thick In0.15Ga0.85N interlayer (IL) within the GaN TJ thanks to piezoelectric polarization induced band bending. Eventually, the impact of InGaN IL on the internal quantum efficiency of blue LEDs is discussed.
关键词： metalorganic chemical vapor deposition,GaN tunnel junctions,blue light-emitting diodes
更新于2025-09-23 15:21:01
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Hybrid perovskite light emitting diodes under intense electrical excitation
摘要： Hybrid perovskite semiconductors represent a promising platform for color-tunable light emitting diodes (LEDs) and lasers; however, the behavior of these materials under the intense electrical excitation required for electrically-pumped lasing remains unexplored. Here, we investigate methylammonium lead iodide-based perovskite LEDs under short pulsed drive at current densities up to 620 A cm?2. At low current density (J < 10 A cm?2), we ?nd that the external quantum ef?ciency (EQE) depends strongly on the time-averaged history of the pulse train and show that this curiosity is associated with slow ion movement that changes the internal ?eld distribution and trap density in the device. The impact of ions is less pronounced in the high current density regime (J > 10 A cm?2), where EQE roll-off is dominated by a combination of Joule heating and charge imbalance yet shows no evidence of Auger loss, suggesting that operation at kA cm?2 current densities relevant for a laser diode should be within reach.
关键词： ion movement,electrical excitation,lasers,Auger loss,light emitting diodes,Hybrid perovskite semiconductors,Joule heating,external quantum efficiency,charge imbalance
更新于2025-09-23 15:21:01
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Systematic studies on Sr4La6(SiO4)6M2:Eu3+ (M?=?F/Cl) phosphors: effects of the halogen anions on photoluminescence
摘要： We successfully prepared Sr4La6(SiO4)6F2:Eu3+ (SLSOF:Eu3+) and Sr4La6(SiO4)6Cl2:Eu3+ (SLSOC:Eu3+) oxyapatite phosphors via the traditional solid-state method. The phosphors’ structure and photoluminescence properties were investigated by scanning electron microscope (SEM), X-ray powder diffraction (XRD), photoluminescence (PL) spectroscopy, ultraviolet–visible spectra and temperature-dependent emission spectra. Among them, the irregular morphology of SLSOF and SLSOC particles was displayed by SEM images, and the phase formation of both sets of phosphors was illustrated by XRD analysis. Additionally, PL spectra indicated that the phosphor could be efficiently excited by the near ultraviolet (NUV) light, and then emitted shining red light, agreeing well with that the calculated color coordinates are within the red region. Comparatively, the luminescence intensity of SLSOF:Eu3+ is higher than that of SLSOC:Eu3+ on the basis of the greater electronegativity of F?, which directly leads to the enhancement of 5D0→7F2 transition. The temperature-dependent emission spectra indicated that samples have excellent thermal stability. Internal quantum efficiency value of phosphors were calculated. These results indicated that the halogen anions of these Sr4La6(SiO4)6M2:Eu3+ play important roles in their PL properties and both phosphors have great potential to serve as red emitting phosphor for NUV white light emitting diodes.
关键词： oxyapatite phosphors,Sr4La6(SiO4)6Cl2:Eu3+,white light emitting diodes,photoluminescence,Sr4La6(SiO4)6F2:Eu3+
更新于2025-09-23 15:21:01
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Highly Efficient Tandem White OLED Using a Hollow Structure
摘要： A simple fabrication method for a light extraction layer is required. In this report, an internal light extraction layer composed of a high refractive index material and an air void is fabricated in five steps. A direct printing process followed by annealing of the randomly arrayed poly(benzyl methacrylate) pillars after a planarization process using TiO2-nanoparticle dispersed resist and sol is used. These substrates are used for light extraction in white tandem organic light emitting diodes (WOLEDs). By combining the hollow structure and hemi-spherical lens, WOLEDs without and with the light extraction structures are found to show maximum external quantum efficiencies of 35.6% and 103%, respectively. The power efficiencies at 100 cd m?2 of the WOLEDs without and with the light extraction structures are found to be 26.5 and 93.2 lm W?1, respectively. A color rendering index of 86.4, correlated color temperature of 4860 K, and CIE of (0.353, 0.389) are achieved in the WOLEDs with light extraction structures.
关键词： organic light emitting diodes,high refractive index,light extraction efficiency,nanoimprint lithography,light scattering layers
更新于2025-09-23 15:19:57
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(Ba,Sr)LaZnTaO6:Mn4+ far red emission phosphors for plant growth LEDs: structure and photoluminescence properties
摘要： It is necessary to develop novel high-efficient red or far-red-emitting in order to facilitate the phosphor-converted light-emitting diodes (pc-LEDs) for plant growth. This work reports a series of novel far-red emitting (Ba,Sr)LaZnTaO6:xMn4+ phosphors with double perovskite structure synthesized by traditional high-temperature solid-state reaction (SSR) process. The crystal structure and morphology of (Ba,Sr)LaZnTaO6 are investigated by high-resolution TEM, SEM, and XRD Rietveld refinement. The photoluminescece properties are systematically explored and analyzed by diffuse reflection (DR) spectra, photoluminescence emission (PL) and excitation (PLE) spectra, decay curves and temperature-dependent spectra. Mn4+ ions occupy Ta5+ sites located at [TaO6] octahedral emitting red light with peak at 698 nm in BaLaZnTaO6:Mn4+ and 695 nm in SrLaZnTaO6:Mn4+ under n-UV and blue light excitation. The critical quenching concentration of Mn4+ was determined to be 0.008. The concentration quenching mechanism could be a dipole-dipole interaction between Mn4+ ions. In addtion, the PL intensity of (Ba,Sr)LaZnTaO6:xMn4+ phosphors decrease with increasing temperature. The SrLaZnTaO6:xMn4+ sample has better thermal stability than BaLaZnTaO6:xMn4+. Interestingly, (Ba,Sr)LaZnTaO6:0.008Mn4+ exhibits outstanding internal quantum efficiency (IQE ≥ 80 %). Fianally, the fabricated of LEDs are combined with SrLaZnTaO6:0.008Mn4+ phosphors combined with 460 nm InGaN chips, which emit blue and red light. Based on above properties, the rare-earth-free (Ba,Sr)LaZnTaO6:xMn4+ phosphors have great potentials to be serviced as far-red emitting phosphors in high-power plant growth LEDS.
关键词： double perovskite structure,phosphor-converted light-emitting diodes,internal quantum efficiency,far-red emitting,plant growth,Mn4+,thermal stability,photoluminescence,solid-state reaction
更新于2025-09-23 15:19:57