研究目的
Investigating the low-temperature growth of n++-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light-emitting diodes.
研究成果
The study demonstrates that low-resistivity GaN tunnel junctions can be achieved on blue LEDs through low-temperature MOCVD growth of n++-GaN layers, with further improvements possible by incorporating InGaN interlayers. This approach eliminates the need for post-growth Mg activation and paves the way for large-scale production of nitride-based tunnel junction LEDs.
研究不足
The study is limited by the potential for hydrogen passivation of Mg-doped layers during n++-GaN overgrowth and the need for optimization of the InGaN interlayer thickness and composition to balance electrical properties and optical losses.
1：Experimental Design and Method Selection:
The study involved the deposition of Si-doped n++-GaN layers on LED epiwafers using metalorganic chemical vapor deposition (MOCVD) at low temperatures to prevent Mg-passivation by hydrogen.
2：Sample Selection and Data Sources:
Commercial 455 nm LED epiwafers were used as substrates.
3：List of Experimental Equipment and Materials:
An Aixtron 200/4 RF-S reactor was used for MOCVD growth, with precursors including triethylgallium (TEGa), NH3, silane, and N
4：Experimental Procedures and Operational Workflow:
The n++-GaN layers were grown at temperatures ranging from 540 to 770 °C, with various silane flows, and at a pressure of 200 mbar.
5：Data Analysis Methods:
Room-temperature Hall effect measurements were conducted to determine carrier density, mobility, and resistivity.
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