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Analysis of Field Degradation Rates Observed in All-India Survey of Photovoltaic Module Reliability 2018
摘要： The analysis of performance degradation in photovoltaic (PV) modules with c-Si technologies as observed in the All-India Survey of PV Module Reliability 2018 is presented in this article. The degradation rates are correlated with the module age, system size, mounting configuration, and climate of deployment. Key failure modes responsible for the higher degradation rates seen in certain sites are identified using visual, infrared, and electroluminescence imaging. Potential-induced degradation is found to be the key mechanism responsible for higher degradation rates seen in Young sites. Also, deployment in hot climates and rooftops is seen to accelerate degradation. Multipoint analysis of degradation rates is presented at sites inspected in prior All-India Surveys.
关键词： potential-induced degradation (PID),All-India Survey,solar photovoltaic (PV),light-induced degradation (LID),field survey,silicon,reliability,degradation
更新于2025-09-12 10:27:22
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Direct Examination of the Deactivation of the Boron–Oxygen Center in Cz-Si Solar Cells Under Regeneration Conditions via Electroluminescence
摘要： We examine the regeneration kinetics of the boron–oxygen defect in boron-doped p-type Czochralski-grown silicon (Cz-Si) solar cells as a function of the excess carrier concentration Δn at the regeneration conditions, i.e., at elevated temperature (140 °C). To perform the regeneration, we apply different forward-bias voltages (Vappl) to solar cells in darkness and measure directly the emitted electroluminescence (EL) signal at different time steps during the regeneration of the cell. Measuring the EL signal emitted by the solar cell during regeneration, we are able to directly determine Δn during regeneration for each applied voltage. In addition to the EL signal, we measure the electric current flowing through the solar cell during the regeneration process. This current is proportional to the overall recombination rate in the cell and, hence, reflects the changing bulk recombination during the regeneration process. From the measured time-dependent cell current, we determine the deactivation rate constant Rde of the boron–oxygen defect. Our experimental results unambiguously show that Rde increases proportionally with Δn during the regeneration process.
关键词： Boron–oxygen defect,injection,regeneration,electroluminescence (EL),carrier,passivated emitter and rear cells (PERCs),Czochralski-grown silicon,light-induced degradation (LID)
更新于2025-09-12 10:27:22