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Device noise reduction for silicon nanowire field-effect-transistor based sensors by using a Schottky junction gate
摘要： The sensitivity of metal-oxide-semiconductor field-effect transistor (MOSFET) based nanoscale sensors is ultimately limited by noise induced by carrier trapping/detrapping processes at the gate oxide/semiconductor interfaces. We have designed a Schottky junction gated silicon nanowire field-effect transistor (SiNW-SJGFET) sensor, where the Schottky junction replaces the noisy oxide/semiconductor interface. Our sensor exhibits significantly reduced device noise, 2.1×10-9 V2μm2/Hz at 1 Hz, compared to reference devices with the oxide/semiconductor interface operated at both inversion and depletion modes. Further improvement can be anticipated by wrapping the nanowire by such a Schottky junction thereby eliminating all oxide/semiconductor interfaces. Hence, a combination of the low-noise SiNW-SJGFET device with a sensing surface of the Nernstian response limit holds promises for future high signal-to-noise ratio sensor applications.
关键词： Noise reduction,field-effect transistor,ion sensor,low frequency noise,schottky junction gate,silicon nanowire
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Analysis of 1/f Noise for Organic TFTs Considering Mobility Power-Law Parameter
摘要： Based on carrier number fluctuation model, 1/f noise is analyzed for organic thin-film transistors (TFTs) at low drain voltage. The carrier mobility is gate-voltage-dependent, and is described by a power-law function. The mobility power-law parameter α determines the relationship between drain current noise power spectral density (PSD) SIDS and drain current IDS, and it is found that SIDS /I 2 DS when α = 1. It is different from the well-known rule for the MOSFETs with the constant carrier mobility: When SIDS /I 2 DS , Hooge’s mobility fluctuation model dominates the 1/f noise.
关键词： carrier mobility,Thin-film transistor (TFT),analytical model,low frequency noise
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC) - Shenzhen, China (2018.11.4-2018.11.7)] 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC) - Investigation of Temperature-Dependent Electrical Behavior and Trap Effect in AlGaN/GaN HEMT
摘要： Temperature-dependent electrical behavior and trap effect in AlGaN/GaN high-electron mobility transistors (HEMT) were investigated at temperatures ranging from 25°C to 125°C. The experiment results show that transfer curves negatively shift and transconductance degrades with the increase in temperature at DC and pulsed conditions, meanwhile, gate leakage current increases significantly. Besides, the shift variation of pulsed transfer curves becomes larger at the elevated temperature and static bias states. This mechanism could be attributed to the enhancement of electron-assisted tunneling ability and easily escaping from the traps for trapped electrons at higher temperature. These traps were confirmed on the base of low frequency noise technique under different temperatures, and the extracted activation energy is 0.521eV for the present devices. The above results may provide useful guidance for design and application of the AlGaN/GaN HEMT.
关键词： Trap Effect,GaN,HEMT,Low Frequency Noise,Temperature
更新于2025-09-23 15:23:52
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[IEEE 2018 33rd Symposium on Microelectronics Technology and Devices (SBMicro) - Bento Gon?alves, Brazil (2018.8.27-2018.8.31)] 2018 33rd Symposium on Microelectronics Technology and Devices (SBMicro) - Low-Frequency Noise Investigation in Long-Channel Fully Depleted Inversion Mode n-type SOI Nanowire
摘要： This work presents a Low-Frequency Noise (LFN) investigation in fully depleted n-type Silicon-On-Insulator (SOI) nanowire transistors working in linear region with VDS=50mV. Long-channel devices of 1μm and 10μm are evaluated. A wide range of fin width is considered in the LFN analysis, from 15nm up to 105nm. The results showed a flicker noise (1/fγ) behavior with gate voltage and a decrease of normalized noise SID/IDS overdrive increase for frequencies bellow 500Hz. Above this frequency, that generation and recombination noise with 1/f2 decay overlaps the flicker noise, becoming the predominant noise source. The cut-off frequency increases with gate voltage overdrive while the gamma exponent decreases. Gamma reduces from 1.3 to 0.9 and from 0.95 to 0.65 for devices with channel length of 1μm and 10μm, respectively. A major noise variation of about one order of magnitude with gate voltage overdrive increase was observed in devices of 1μm long in comparison to channel length of 10μm. The devices showed weak noise dependence on fin width due to mobility decrease as nanowires become narrower.
关键词： fully depleted SOI,low-frequency noise,nanowire
更新于2025-09-23 15:21:21
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Coherence of a Driven Electron Spin Qubit Actively Decoupled from Quasistatic Noise
摘要： The coherence of electron spin qubits in semiconductor quantum dots suffers mostly from low-frequency noise. During the past decade, efforts have been devoted to mitigate such noise by material engineering, leading to substantial enhancement of the spin dephasing time for an idling qubit. However, the role of the environmental noise during spin manipulation, which determines the control fidelity, is less understood. We demonstrate an electron spin qubit whose coherence in the driven evolution is limited by high-frequency charge noise rather than the quasistatic noise inherent to any semiconductor device. We employ a feedback-control technique to actively suppress the latter, demonstrating a π-flip gate fidelity as high as 99.04 (cid:1) 0.23% in a gallium arsenide quantum dot. We show that the driven-evolution coherence is limited by the longitudinal noise at the Rabi frequency, whose spectrum resembles the 1=f noise observed in isotopically purified silicon qubits.
关键词： gallium arsenide quantum dot,low-frequency noise,Rabi frequency,1=f noise,semiconductor quantum dots,π-flip gate fidelity,isotopically purified silicon qubits,feedback-control technique,high-frequency charge noise,electron spin qubits
更新于2025-09-19 17:13:59
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Room temperature low frequency noise in n <sup>+</sup> -InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes
摘要： Low frequency forward current noise as well as the photocurrent noise are studied in InAsSbP/InAs double heterostructure (DH) photodiodes, in the frequency range 1–104 Hz. The photocurrent noise in DH photodiodes is signi?cantly lower than in single heterostructure (SH) photodiodes. The forward current noise in a DH diode exhibiting the 1/f frequency dependence is also much lower than that in SH diodes. However, in some DH diodes, it is the generation-recombination mechanism that provides the dominant contribution to the forward current noise; in this case the noise level is signi?cantly higher. At suf?ciently high forward current densities, the noise decreases with current. The observed generation-recombination noise spectrum cannot be described within the conventional theory.
关键词： InAs photodiodes,low frequency noise,forward bias,photocurrent noise,Mid-IR photodetectors
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 4th Optoelectronics Global Conference (OGC) - Shenzhen, China (2019.9.3-2019.9.6)] 2019 IEEE 4th Optoelectronics Global Conference (OGC) - Quality Assessment of 980 nm GaAs Based Laser Diodes with Use of Low-Frequency Noise Measurements
摘要： Low-frequency noise has always been a fast and non-destructive tool to characterise the performance and quality of materials and electrical devices. In this paper, a non- destructive method of predicting reliability was introduced for 980 nm GaAs based semiconductor laser diodes. Measurement and analysis were carried out for the noise and transport characteristics of forward voltage biases. The results demonstrated a close relationship between LD quality and the characteristic parameters of low-frequency noise such as frequency exponent, noise intensity and amplitude.
关键词： low-frequency noise,frequency exponent,forward bias,laser diodes,GaAs substrate
更新于2025-09-16 10:30:52
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[IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Cooled Silicon-On-Insulator Diode Thermometer: Toward THz Passive Imaging
摘要： Terahertz passive imaging requires high sensitivity detectors, with Minimum Detectable Power (MDP) under the picowatt range. An antenna-coupled cooled microbolometer, incorporating a lateral PiN-like diode as thermometer, could represent a solution. In a first step, such diode performances have to be investigated, especially the temperature coefficient of current (TCC) and the low frequency noise. Prototypes were fabricated on Silicon-On-Insulator (SOI) 4” wafers with 50-nm active silicon layer. I-V and noise measurements down to 81K were useful to derive the electrical MDP of the future bolometer, already reaching 6.6 pW at 10 frames per second.
关键词： low frequency noise,microbolometer,Minimum Detectable Power,PiN diode,temperature coefficient of current,Silicon-On-Insulator,Terahertz passive imaging
更新于2025-09-12 10:27:22
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Effect of a Low-Frequency Noise Signal on the Supply Circuit of the Millimeter-Band Generator of Single-Frequency and Chaotic Oscillations Designed on an Avalanche Transit-Time Diode
摘要： The effect of a low-frequency noise signal on the supply circuit of a millimeter-band generator of single-frequency and chaotic oscillations designed on an avalanche transit-time diode has been experimentally investigated. Generation of noise oscillations under the action of a low-frequency narrowband (~3 MHz) noise signal on the supply circuit of an avalanche transit-time diode in a single-frequency self-oscillator based on a 7-millimeter-wave avalanche transit-time diode has been obtained for the first time and the possibility of control of the spectral characteristic of a 8-millimeter-band noise generator on an avalanche transit-time diode using such an impact has been demonstrated.
关键词： single-frequency oscillations,avalanche transit-time diode,millimeter-band generator,low-frequency noise signal,chaotic oscillations
更新于2025-09-10 09:29:36
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Low-frequency noise in irradiated graphene FETs
摘要： We present a quantitative analysis of the low-frequency noise in irradiated monolayer graphene. In this study, we repeatedly irradiate a back-gated graphene transistor with argon ions at 90 eV and measure its low-frequency noise and channel conductivity after each irradiation. Our results indicate that the noise amplitude decreases monotonically with the increasing density of vacancy defects. The combination of our low-frequency noise measurements and carrier transport studies reveals that the mobility fluctuation model can explain this observation and that the density of vacancy defects, the density of charged impurities, and the mean free path of charge carriers determine the noise amplitude.
关键词： mobility fluctuation model,low-frequency noise,charged impurities,irradiated graphene,vacancy defects,mean free path
更新于2025-09-10 09:29:36