P-1.3: The conductivity modulation of amorphous zinc tin oxide thin film by Ar plasma treatment

摘要： We propose a method to form low-resistance amorphous zinc tin oxide thin film (a-ZTO) by Ar plasma. The results show that the Ar plasma treatment can effectively decrease the resistivity of the a-ZTO. The ZTO film treated with Ar plasma at suitable time and moderate operating power, exhibits a low sheet resistance of 2.3 kΩ/□. With the help of PECVD-SiOx coverage layer, the sheet resistance of Ar-plasma treated ZTO is enhanced and increases only one order of magnitude after annealing at 230 ℃. As a result, an optimized Ar plasma treatment for fabrication of low-resistance a-ZTO film is presented.