研究目的
To study the use of Ar plasma treatment to form low-resistance amorphous zinc tin oxide (a-ZTO) films, optimize the treatment parameters, and investigate thermal stability with SiOx coverage layers.
研究成果
Ar plasma treatment effectively reduces the resistivity of a-ZTO films, with optimal conditions at 100 W RIE power and 60 s treatment time. PECVD-SiOx coverage layers improve thermal stability, allowing only a one-order magnitude increase in resistance after annealing at 230°C. This method is cost-effective and feasible for TFT fabrication, but high-temperature annealing should be avoided.
研究不足
The thermal stability of Ar-plasma treated films is poor without passivation, deteriorating significantly above 250°C annealing. The method may not be suitable for high-temperature processes, and optimization is needed for different film thicknesses or materials.
1：Experimental Design and Method Selection:
The study involves using Ar plasma treatment to reduce the resistivity of a-ZTO films, with optimization of treatment time and RIE operating power. Thermal stability is assessed with and without PECVD-SiOx coverage layers.
2：Sample Selection and Data Sources:
40-nm-thick a-ZTO films deposited on 2-inch glass wafers using RF magnetron sputtering at room temperature with Ar/O2 gas mixture (48:2 flow ratio). Films are annealed at 400°C in O2 for 1h before plasma treatment.
3：List of Experimental Equipment and Materials:
RF magnetron sputtering system for film deposition, RIE and PECVD systems for Ar plasma generation, HMS-3000 Hall Measurement System for sheet resistance measurement, PECVD for SiOx deposition, sputtering for Mo contact pads, dry etching and lift-off for patterning.
4：Experimental Procedures and Operational Workflow:
a) Deposit a-ZTO film, anneal, expose to Ar plasma at varying powers and times, measure sheet resistance, anneal at 230°C in air for 0.5h. b) Deposit SiOx coverage layers with different SiH4/N2O ratios using PECVD, pattern, deposit Mo contacts, anneal at different temperatures, measure sheet resistance.
5：5h. b) Deposit SiOx coverage layers with different SiH4/N2O ratios using PECVD, pattern, deposit Mo contacts, anneal at different temperatures, measure sheet resistance.
Data Analysis Methods:
5. Data Analysis Methods: Sheet resistance is measured using the HMS-3000 system; data is analyzed to determine optimal treatment conditions and thermal stability effects.
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