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The effect of Zn3N2 phase decomposition on the properties of highly-doped ZnO: Al, N films
摘要： Study of Al-N simultaneous doping and thermal annealing influence on the properties of ZnO films is very important for achievement as p-type conductivity in the films as for improvement the performance of ZnO-based ultraviolet detectors. Highly-doped ZnO:Al,N films containing the Zn3N2 phase (ZnO:Al,N-Zn3N2) were grown on Si substrates by magnetron sputtering using a layer-by-layer growth technique. Our work presents a comparative study of the structure, optical and electronic properties of highly-doped as-grown and annealed ZnO:Al,N films. It was shown that the thermal annealing of ZnO:Al,N-Zn3N2 film at atmospheric conditions allows to decompose the Zn3N2 phase. The features of this phenomena on the properties of ZnO:Al,N films were investigated and discussed in detail by using X-ray diffraction, energy dispersive X-ray analysis, Raman scattering, photoluminescence, X-ray photoelectron spectroscopy and X-ray emission spectroscopy.
关键词： Radio-frequency magnetron sputtering,Zinc oxide,Nitrogen-aluminum doping,Photoluminescence,X-ray photoelectron spectroscopy,Thin films,X-ray diffraction,Raman scattering
更新于2025-09-23 15:21:01
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[Lecture Notes in Networks and Systems] Advances in Engineering Research and Application Volume 63 (Proceedings of the International Conference, ICERA 2018) || Comparison Between DC and HiPIMS Discharges. Application to Nickel Thin Films
摘要： The study deals with a comparison between Direct Current (DC) and High Power Impulse Magetron Sputtering (HiPIMS) processes. We have ?rst highlighted that the plasma of the DC discharge is composed mainly of gaseous species whereas the HiPIMS discharge leads to a plasma dominated by metal vapor and characterized by the presence of charged species of strong and low energy. For thin nickel (Ni) ?lms, we have found the the use of HiPIMS produce denser and better crystallized layers improving the uniformity of the coating on substrates with complex geometries.
关键词： Nickel thin ?lms,HiPIMS,Magnetron sputtering
更新于2025-09-23 15:21:01
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Sputtered cobalt doped CuO nano-structured thin films for photoconductive sensors
摘要： Pure and cobalt (Co) doped CuO thin films have been deposited by DC and AC reactive magnetron sputtering technique. The doping ratio has been controlled by the RF power of the AC sputtering unit. The sputtering power ranges from 0 to 50 W. The crystal structure of the films has been identified by X-ray diffraction. One of the peaks has been shifted toward the high diffraction angle. Energy dispersive analysis shows cationic deficiency of the pure and doped samples. Morphology of the films has been investigated by atomic force microscopy. Film roughness decrease with the increase of sputtering power. Spectrophotometry studies reveal that films darken with the increase of sputtering power. The current–voltage curves show Ohmic contacts and an enhancement in the conductivity with the increase of Co concentrations. Photoresponse measurements have shown that the film doped at 50 W is the best photodetector sensor.
关键词： photoconductive sensors,thin films,magnetron sputtering,Co doped CuO
更新于2025-09-23 15:21:01
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Preparation and characterization of lead zirconate titanate thin films grown by RF magnetron sputtering for pyroelectric infrared detector arrays
摘要： One of the challenges in fabricating pyroelectric infrared (PIR) detector arrays using microelectromechanical system (MEMS) technique lies in finding an optimal growth method of sensing thin films. In this study, lead zirconate titanate (PbZr0.3Ti0.7O3, PZT) thin films were successfully prepared on Pt/TiO2/Si3N4/SiO2/Si substrates by RF magnetron sputtering. The structure, morphology and electrical properties of the films annealed at different temperatures were investigated. PZT thin films deposited at a working pressure of 3.0 Pa with an Ar/O2 gas flow ratio of 80/20 and annealed at 700 °C exhibited smooth surface and excellent dielectric, ferroelectric and pyroelectric properties. The dielectric constant and the loss tangent of the films are 500 and 0.018 at 1 kHz, respectively. The remnant polarization (Pr) and the coercive field (Ec) of the films are 33 μC cm?2 and 42 kV cm?1, respectively. The pyroelectric coefficient of the films is 0.033 μC cm?2 K?1. The value of the figure of merit of detectivity (FD) of PZT thin films reaches up to 1.29 × 10?5 Pa?1/2, which indicates that the films have met the requirements for sensitive layers utilized in pyroelectric infrared detector arrays.
关键词： RF magnetron sputtering,Pyroelectric infrared detector arrays,PZT thin films
更新于2025-09-23 15:21:01
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Temporal evolution of spatial optical emission characteristics by inductively-coupled impulse sputtering (ICIS) using high power-burst 155kHz-ICP
摘要： A copper target was negatively-biased and was sputtered by bombardment of argon ion species produced 155 kHz-inductively-coupled plasma (ICP) in a burst-pulse mode for a duration of 800 μs. This system was called ICIS (Inductively-coupled impulse sputtering). The plasma density was on the order of 1019 m-3 in the ICP region. The target current density and the power density were about 0.8 A/cm2 and about 0.3 kW/cm2, respectively. Temporal evolution of the optical emission of the plasma species was discussed. The observed species were argon ions, excited argon and excited copper. The entire region consisted of the ICP, a bulk plasma and a target plasma. Argon ions produced in the ICP were transported by an ambipolar diffusion toward the target and excited argon and excited copper species were mainly produced in the target plasma. A plateau emission by argon ions and spike emission by energetic electrons which were originated from secondary electrons were seen. Gas rarefaction of argon gas also influenced the temporary evolution particularly near at the target. This was discussed using a carbon target.
关键词： Inductively-coupled impulse sputtering,glow discharge,Inductively-coupled plasma,High power impulse magnetron sputtering,HiPIMS,ICIS
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Impact of Deposition of ITO on Tunnel Oxide Passivating Poly-Si Contact
摘要： In this study, we investigate the impact of the deposition of indium tin oxide (ITO) via DC magnetron sputtering on tunnel oxide passivating poly-Si contacts. Before ITO deposition to the tunnel SiOx passivating n+ poly-Si rear-contact on the cell structure with an SiNx/Al2O3 passivating boron emitter, the implied open-circuit voltage (iVoc) and implied fill factor (iFF) were measured to be 694±10 mV and 83±0.6%, respectively. After ITO sputtering and curing annealing, the iVoc and iFF were almost fully recovered, resulting in the iVoc of 685±11 mV and iFF of 81.9±0.8%. The characteristic of fully recovered effective lifetime is attributed to unique sputtering conditions employing a very low power density at room temperature and curing.
关键词： silicon solar cell,indium tin oxide,transparent conducting oxide,DC magnetron sputtering,tunnel oxide,perovskite,tandem solar cell
更新于2025-09-23 15:19:57
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Room-temperature Sputtered NiOx for hysteresis-free and stable inverted Cs-FA mixed-cation perovskite solar cells
摘要： In this research, a room-temperature sputtering technology for fabricating high performance NiOx film was developed, which was applicable for inverted cesium (Cs)-formamidinium (FA) mixed-cation perovskite solar cells (PSCs). The Ni3t/Ni2t ratio in sputtered NiOx film was effectively adjusted by controlling Ar pressure while sputtering. NiOx films with appropriate Ni3t/Ni2t ratio exhibit uniform surface morphology, high transmittance, and better energy level match with the perovskite layer. By using this sputtered NiOx film as hole transporting layer, short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF) and power conversion efficiency (PCE) of a champion inverted PSC were 19.25 mA/cm2, 1.05 V, 0.80 and 16.23%, respectively. Also, these devices remained 90.6% of their initial PCE after light soaking at a surrounding temperature of 50°C for more than 600 h.
关键词： Stability,Room-temperature,Magnetron sputtering,Cs-FA mixed-cation perovskite,NiOx HTL
更新于2025-09-23 15:19:57
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Tunable indium tin oxide thin film as saturable absorber for generation of passively Q-switched pulse erbium-doped fiber laser
摘要： A tunable Q-switched pulse erbium-doped ?ber (EDF) laser using indium tin oxide (ITO) thin-?lm-based saturable absorber (SA) is proposed and demonstrated. The SA is formed by depositing an ITO layer using DC magnetron sputtering on the ?ber ferrule, which can be easily fabricated in less than 200 s with thickness of 17.80 nm. The proposed tunable Q-switched pulse EDF laser is operated from 1540.0 to 1570.0 nm, covering a total wavelength of 30.0 nm. The generated output pulses displayed a repetition rate range between 21.70 and 94.34 kHz. The shortest pulse width retrieved is 3.22 ls at the maximum pump power of 378.6 mW, while the maximum pulse energy recorded is 30.29 nJ. To the best of the authors’ knowledge, this appears to be the ?rst proposed tunable passively Q-switched pulse EDF laser using ITO that serves as SA, which can promote ITO ?lm in the application of ultrafast photonics.
关键词： DC magnetron sputtering,Saturable absorber,Indium tin oxide,Q-switching ?ber laser
更新于2025-09-23 15:19:57
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Selective laser ablation and patterning on Ag thin films with width and depth control
摘要： Silver (Ag) films were deposited on glass substrates by radio frequency (RF) magnetron sputtering and then ablated by a 532 nm nanosecond pulsed laser. The effects of laser fluence and defocusing amount on the width and depth of laser-ablated grooves on 100- and 600-nm-thick Ag films were systematically investigated under single- and multi-scan ablation. The results suggested that the Ag films could be successfully removed from the substrate owing to laser-induced thermoelastic force or vaporization. It was confirmed that laser fluence and defocusing amount played very important roles in controlling the width and depth of the laser-ablated grooves. In the present work, grooves with widths ranging from 53 to 196 μm and depths ranging from 56 to 196 nm were obtained on 100-nm-thick Ag films by single-scan laser ablation, and laser ablation or removal with controllable depths was realized on 600-nm-thick Ag films by adopting single- or multi-scan (i.e., scanning numbers of 1–6). Furthermore, square spiral Ag patterns were successfully obtained by single- and multi-scan laser ablation and showed good electrical conductivity in a simple circuit. This work may have great potential applications in various fields that demand width and depth control of laser ablation/removal.
关键词： Width and depth control,Laser ablation,Ag thin films,RF magnetron sputtering,Nanosecond pulsed laser
更新于2025-09-23 15:19:57
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Effects of substrate-controlled-orientation on the electrical performance of sputtered BaTiO <sub/>3</sub> thin films
摘要： In this work, the relationships between bottom electrode/substrate configuration, crystalline microstructure, and electrical performances of BaTiO3 (BTO) thin films were investigated. The films were fabricated via RF magnetron sputtering on (Sr0.5La0.5)CoO3 (LSCO) buffered (110)-, (111)-SrTiO3 (STO) and SrRuO3 (SRO) buffered (110)-, (111)-MgO (MGO) substrates. The x-ray diffractometer results show that the LSCO/STO substrate resulted in films with high-quality epitaxial orientation, whereas the SRO/MGO substrate resulted in films having a strong (110) texture. The electrode/substrate configurations were designed to control the crystalline microstructure, which in turn affects the electrical performances of the films. The electrical performances were studied by employing a metal/ferroelectric/metal model. The J-V characteristics show obvious asymmetry with bias, which is mainly due to the varying transport state of oxygen vacancies. BTO films grown on LSCO/STO substrates exhibit large dielectric frequency dispersion, while those grown on SRO/MGO substrates display a nearly frequency independent response. All electrical parameters of these films were strongly affected by the polarization-tilting angle and the preferred orientation degree. Epitaxial and textured (110)-oriented films show higher permittivity but lower loss tangent, free-carrier concentration, built-in voltage, and leakage current density as compared to the epitaxial (111)-oriented film.
关键词： dielectric properties,electrical performance,substrate-controlled-orientation,BaTiO3 thin films,RF magnetron sputtering
更新于2025-09-23 15:19:57