研究目的
Investigating the impact of the deposition of indium tin oxide (ITO) via DC magnetron sputtering on tunnel oxide passivating poly-Si contacts.
研究成果
The deposition of ITO via DC magnetron sputtering at very low power density and room temperature minimally impacts the passivation quality of tunnel oxide passivating poly-Si contacts, with almost full recovery of iVoc and iFF after curing annealing.
研究不足
The study is limited to the specific conditions of ITO deposition and annealing, and the impact on tunnel oxide passivating poly-Si contacts. Further research is needed to generalize the findings to other materials and conditions.
1：Experimental Design and Method Selection:
The study involved the deposition of ITO via DC magnetron sputtering on tunnel oxide passivating poly-Si contacts.
2：Sample Selection and Data Sources:
High-resistivity planar Fz p-type Si wafer and commercially available n-type Cz wafer were used.
3：List of Experimental Equipment and Materials:
DC magnetron sputtering system, ITO target, ultra-high purity argon.
4：Experimental Procedures and Operational Workflow:
ITO was deposited at room temperature with very low DC power density, followed by thermal annealing.
5：Data Analysis Methods:
Quasi-steady-state photoconductance (QSSPC) technique was used to measure the effective minority carrier lifetime.
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