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Influence of Substrate Stage Temperature and Rotation Rate on the Magneto-Optical Quality of RF-Sputtered Bi2.1Dy0.9Fe3.9Ga1.1O12 Garnet Thin Films
摘要： Highly bismuth-substituted iron garnet thin films are prepared on quartz substrates by using a radio frequency (RF) magnetron sputtering technique. We study the factors (process parameters associated with the RF magnetron sputter deposition technique) affecting the magneto-optical (MO) properties of ferrite garnet films of composition Bi2.1Dy0.9Fe3.9Ga1.1O12. All ?lms show high MO response across the visible range of wavelengths after being annealed. In particular, the effects of substrate stage temperature and rotation rate on the various properties of ?lms are studied. Experimental results reveal that the characteristics of garnet ?lms of this type can be tuned and optimized for use in various magnetic ?eld-driven nanophotonics and integrated optics devices, and that, at a substrate stage rotation rate near 16 revolutions per minute, the MO quality of the developed MO ?lms is the best, in comparison with ?lms deposited at other rotation rates. To the best of our knowledge, this is the ?rst report on the effects of deposition parameters on the properties of garnet ?lms of this stoichiometry.
关键词： magneto-photonics,Faraday rotation,MO garnets,substrate temperature,process parameters,RF magnetron sputtering
更新于2025-09-10 09:29:36
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Electrical and optical properties of metal-sandwiched ZnO/Ti/Cu/Ti/ZnO transparent conductive thin film
摘要： Metal-sandwiched zinc oxide (ZnO)/titanium (Ti)/copper (Cu)/Ti/ZnO thin film systems were fabricated using magnetron sputtering technology and then annealed using a rapid thermal annealing system at temperatures from 100 to 400°C. The influence of the Ti film thicknesses and annealing temperatures on the surface morphologies, sheet resistance and optical properties were studied. The surface morphologies change a little with the annealing temperature rises. The sheet resistances reduce with the Ti film thickness or annealing temperature increasing. Both the max transmittance and figure of merit reduce with the increase of Ti film thickness. The max transmittance increases with the temperature increasing from 100 to 300°C and then reduces. However, the figure of merit increases with the temperature increasing which indicates that the metal-sandwiched ZnO/Ti/Cu/Ti/ZnO thin film system annealed at 400°C has the optimal performance.
关键词： ZnO,optical properties,annealing,magnetron sputtering,Cu,electrical properties,transparent conductive thin film,Ti
更新于2025-09-10 09:29:36
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Study on the electrical, optical, structural, and morphological properties of highly transparent and conductive AZO thin films prepared near room temperature
摘要： A correlation study between the microstructural, electrical, optical, and morphological properties of the highly transparent and conductive Al-doped ZnO (AZO) films of varying thickness deposited by 3D confined DC magnetron sputtering is reported. Incorporating a high-density plasma environment as indicated by plasma diagnostic it was possible to fabricate AZO films of resistivity as low as ~ 5.2×10-4 Ωcm and the maximum transmittance ~ 89 % with well crystalline structured and smooth morphology at low-temperature. Correlation among the film properties reveals the possibility of filling the Zn atom in the Zn vacancy could be responsible for preparing AZO thin film with improved microstructure and high enrichment of carrier mobility and concentration.
关键词： AZO film,3-D confined magnetron sputtering,Transparent conducting oxide (TCO),Plasma processing
更新于2025-09-10 09:29:36
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Hydrogen gas sensing properties of WO3 sputter-deposited thin films enhanced by on-top deposited?CuO nanoclusters
摘要： Magnetron-based gas aggregation cluster source (GAS) was used to prepare high-purity CuO (cupric oxide) nanoclusters on top of sputter-deposited thin film of tungsten trioxide (WO3). The material was assembled as a conductometric hydrogen gas sensor and its response was tested and evaluated. It is demonstrated that addition of CuO clusters noticeably enhances the sensitivity of the pure WO3 thin film. With an increasing amount of CuO clusters the sensitivity of CuO/WO3 system rises further. When CuO clusters form a sufficiently thick and compact layer, the resistance response is reversed. Based on the sensorial behavior, conventional and near-ambient pressure X-Ray photoemission spectroscopies, and resistivity measurements, we propose that the sensing mechanism is based on the formation of nano-sized p-n junctions in between p-type CuO and n-type WO3. The advantages of the GAS technique for preparing sensorial and/or catalytically active materials are emphasized.
关键词： Hydrogen gas sensor,Gas aggregation cluster source,Magnetron sputtering,Tungsten oxide,Nanocomposites,Cupric oxide
更新于2025-09-10 09:29:36
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Effect of annealing treatment on transparent and conductive hydrated magnesium-carbon films
摘要： Transparent electronic technology has many urgent optoelectronic device applications. A key component of plasmonic materials in conventional semiconductors is the wide band gap of oxide thin films. Although transparent electronic materials have been developed for visible and near-infrared wavelengths, systems incorporating mid-infrared and far-infrared spectra are difficult to achieve. In this study, hydrated magnesium-carbon films, a new type of non-oxide transparent conductive thin films with a magnesium hydroxide structure, were generated using the three-step method. After annealing treatment, larger crystals in the thin films typically exhibited superior film resistivity, with conductivity values of approximately 8.63 × 10?3 Ω m. Due to the free electron concentration was not more than 1020 cm?3, the films demonstrated excellent optical properties, with plasma wavelength values of approximately 8 mm for infrared transmittance above 70%. After annealing, due to the Moss-Burstein (M-B) effect, the visible light transmittance was greater than 85% and the optical bandgap shifted towards the blue region. In addition, the influences of the sputtering power of the carbon target on the properties of hydrated magnesium-carbon film were also discussed in this paper.
关键词： Transparent conductive films,Electrical properties,Magnetron sputtering,Hydrated magnesium-carbon films
更新于2025-09-10 09:29:36
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Substrate Temperature Dependent Properties of Sputtered AlN:Er Thin Film for In-Situ Luminescence Sensing of Al/AlN Multilayer Coating Health
摘要： The integrity and reliability of surface protective coatings deposited on metal surface could be in-situ monitored via the attractive luminescence sensing technique. In this paper, we report the influence of substrate temperature on the properties of erbium (Er) doped aluminum nitride (AlN) film, which could be applied as a luminescent layer for monitoring the health of multilayered Al/AlN coating. The AlN:Er films were deposited via reactive radio-frequency magnetron sputtering, and the silicon substrate temperature was varied from non-intentional heating up to 400 ?C. The composition, morphology, crystalline structure, and dielectric function of the AlN:Er films deposited under these different substrate temperature conditions were studied. These properties of the AlN:Er films show strong correlation with the substrate temperature maintained during film fabrication. The obtained AlN:Er films, without further annealing, exhibited photoluminescence peaks of the Er3+ ions in the visible wavelength range and the strongest photoluminescence intensity was observed for the AlN:Er film deposited with the temperature of substrate kept at 300 ?C. The results demonstrated in this work offer guidance to optimize the substrate temperature for the deposition of AlN:Er film for future application of this sensing technique to thin metal components.
关键词： aluminum nitride,erbium doping,magnetron sputtering,luminescence sensing
更新于2025-09-10 09:29:36
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Influence of thermal annealing on structural and optical properties of RF-sputtered LiTaO <sub/>3</sub> thin films
摘要： Near stoichiometric ratio lithium tantalate (LiTaO3) thin film possesses unique performance advantages compared with bulk LiTaO3 single crystal in applying in thermal sensors and detectors. Here, LiTaO3 thin film is prepared on Pt/Ti/SiO2/Si(100) substrate by the method of RF magnetron sputtering. The authors conduct research on the structure and optical properties of LiTaO3 thin film under the conditions of annealing temperatures varying from 550 °C to 700 °C. Besides, the authors also study on optical constants of the LiTaO3 thin film which includes refractive indices, extinction coefficients and optical band gap energy by spectroscopic ellipsometry. The results show that optical band gap energy Eg will increase along with the grain size’s increase. Moreover, the results demonstrate that the best annealing temperature is 600 °C. Under the best annealing condition, the obtained refractive index, extinction coefficient k and optical band gap energy Eg is 2.05, 2×10?5 and 3.82 eV, respectively. These values are consistent with that of lithium tantalate single crystal. All results above mentioned proving that lithium tantalate (LiTaO3) thin film prepared by RF magnetron sputtering possesses a good crystallinity and ordered structure.
关键词： optical constants,lithium tantalate thin film,RF magnetron sputtering,optical band gap Eg
更新于2025-09-10 09:29:36
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Thermal Treatments and Photoluminescence Properties of ZnO and ZnO:Yb Films Grown by Magnetron Sputtering
摘要： This work is on ZnO and ZnO:Yb (0.3 at%) films prepared on (100) Si substrates by magnetron sputtering and deals with their structural and photoluminescence evolutions upon annealing at different temperatures from 873 to 1173 K during 1 h under N2 atmosphere. The microstructural characterizations reveal that, for both sample series, annealing treatment improves the crystallinity of ZnO of the upper part of the films. However, (002) textured ZnO columnar growth is only observed for ZnO films. For annealing temperatures higher than 973 K, rare earth and Si diffusions toward the film/substrate interface are observed resulting in the appearance of a zinc silicate phase for ZnO films and a composite material made of nanoscale ZnO grains surrounded by an amorphous phase for ZnO:Yb films. In addition, photoluminescence measurements show that Yb doping in ZnO results in a lower integrated photoluminescence intensity compared to that of ZnO films and the photoluminescence response in the visible spectral range is also modified most probably due to the presence of dopant. Furthermore, the PL intensity at 980 nm originating from electronic transitions between 2F5/2 and 2F7/2 levels of Yb3+ ion increased with temperature. At last, the evolutions of the PL emissions with temperature from the ZnO defects are discussed.
关键词： ZnO,thin film,magnetron sputtering,Yb doping
更新于2025-09-09 09:28:46
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High Ferroelectricities and High Curie Temperature of BiInO <sub/>3</sub> PbTiO <sub/>3</sub> Thin Films Deposited by RF Magnetron Sputtering Method
摘要： Properties of ferroelectric ??BiInO3-(1 ? ??)PbTiO3 (??BI-(1 ? ??)PT) thin films deposited on (101) SrRuO3/(200) Pt/(200) MgO substrates by rf magnetron sputtering method and effects of deposition conditions are investigated. The structures of the ??BI-(1???)PT films are characterized by x-ray diffraction and scanning electron microscopy. The results indicate that the thin films are grown with mainly (001) orientation. The chemical compositions of the films are analyzed by scanning electron probe and the results indicate that the loss phenomena of Pb and Bi elements depend on the pressure and temperature during the sputtering process. The sputtering parameters including target composition, substrate temperature, and gas pressure are adjusted to obtain optimum sputtering conditions. To decrease leakage currents, 2 mol% La2O3 is doped in the targets. The ?? –?? hysteresis loops show that the optimized ??BI-(1 ? ??)PT (?? = 0.24) film has high ferroelectricities with remnant polarization 2??r = 80 ??C/cm2 and coercive electric field 2??c = 300 kV/cm. The Curie temperature is about 640°C. The results show that the films have optimum performance and will have wide applications.
关键词： ferroelectric,rf magnetron sputtering,BiInO3-PbTiO3,thin films,Curie temperature
更新于2025-09-09 09:28:46
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Ion irradiation effects on Sb-rich GaSb films
摘要： Here we show the formation of amorphous, non-stoichiometric GaSb films by magnetron sputtering and the ion irradiation effects on the films. GaSb films in the 20–300 nm thickness range were deposited by magnetron sputtering on SiO2/Si substrates at room temperature and subsequently irradiated with 17 MeV Au+7 ions at different fluences. Structural, compositional, and morphological characterizations were performed by means of x-ray diffraction, Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, scanning electron microscopy and x-ray absorption fine structure analyses. We could verify that, throughout the above-mentioned thickness range, films were amorphous, with excess Sb to the ratio 1:2 (Ga:Sb). The initially compact films attained a foam-like structure after irradiation, with significant swelling that is dependent on the initial film thickness: the thicker the film, the more it swelled. The excess Sb attained different oxidation states depending on film thickness and this influenced the final density of the films, thus influencing the swelling. The local atomic structure around Ga atoms was also investigated, revealing a decrease in Ga–Sb scattering contribution with increasing irradiation fluence, at the same time as the increase in Ga–O scattering for irradiation fluence above 1×1014 at/cm2 (inclusive).
关键词： XPS,XAFS,RBS,GaSb films,ion irradiation,XRD,magnetron sputtering
更新于2025-09-09 09:28:46