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Resistive switching behavior and mechanism in flexible TiO2@Cf memristor crossbars
摘要： Fiber-based memristors are expected to be one of the most ideal candidates to the future wearable nonvolatile devices. In this work, Carbon fibers coated with rutile TiO2 nanorods (TiO2 NRs) were prepared via hydrothermal method, which were denoted as TiO2@Cf. Flexible TiO2@Cf memristor crossbar was facilely assembled on a polyimide (PI) film. This device exhibited bi-directional threshold switching behavior and a maximum ON/OFF ratio of 105. In addition, the conductance of the memristors can be continuously adjusted by consecutive sweep cycles of bias voltages. The devices also exhibit excellent endurance over 1500 cycles with a negligible shift. The carriers transport and resistance switching of the TiO2@Cf memristor crossbar were explained by the Fowler-Nordheim tunneling model. The oxygen vacancies (OV) in TiO2 drifted to the interface of TiO2/Cf by an applied electric field, thereby reducing the depletion region and enhancing the current. This work provides a profound understanding of the resistive switching behavior and the related mechanism in flexible TiO2@Cf memristor crossbars, and paves a new way for potential applications for memristors in artificial synapses and flexible devices.
关键词： Artificial synapses,Oxygen vacancies,Memristor crossbars,Flexible devices,Carbon fibers
更新于2025-11-14 17:03:37
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An optically-gated transistor comprised of amorphous M+Ge2Se3 (M=Cu, Sn) for accessing and continuously programming a memristor
摘要： We demonstrate that a device comprised of sputtered amorphous chalcogenide Ge2Se3/M+Ge2Se3 (M = Sn or Cu) alternating layers, functions as an optically-gated transistor (OGT) and can be used as an access transistor for a memristor memory element. This transistor has only two electrically connected terminals (source and drain), with the gate being optically controlled, thus allowing the transistor to operate only in the presence of light (385 – 1200 nm). The switching speed of the OGTs is less than 15 μs. The OGT is demonstrated in series with a Ge2Se3+W memristor, where we show that by altering the light intensity on the OGT gate, the memristor can be programmed to a continuous range of non-volatile memory states using the saturation current of the OGT as a programming compliance current. By having a continuous range of non-volatile states, one memory cell can potentially achieve 2n levels. This high density, combined with optical programmability, enables hybrid electronic/photonic memory.
关键词： access transistor,chalcogenide,resistive RAM,optoelectronic,selector,amorphous,memristor
更新于2025-09-23 15:23:52
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Morphological regulation of all-inorganic perovskites for multilevel resistive switching
摘要： Enormous attention has been paid to all-inorganic cesium lead halide perovskites in various photoelectronic fields for their remarkable performances. However, comparing to their analogue organic-inorganic hybrid perovskites, the film morphology of such all-inorganic lead halide perovskites is difficult to control due to the low solubility of cesium salt. Here, we propose a new fabrication routine to control the film morphology of CsPbBr3. A series of CsPbBr3 thin films with big grains (≈800 nm) were successfully prepared. The memristors based on such CsPbBr3 thin films take on typical bipolar resistive switching behavior and remarkable characteristics such as high Ron/Roff ratio (≈105), very low working voltage (≈ ± 1 V), and long data retention (≥104 s). Furthermore, through modulating the film morphology, memristors with multilevel resistive switching behavior can be easily prepared. These advantages demonstrate that the all-inorganic cesium lead halide memristors possess great potential for future application.
关键词： Memristor,Morphological regulation,Multilevel resistive switching,All-inorganic perovskite
更新于2025-09-23 15:23:52
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A Hybrid Optical/Electric Memristor for Light-Based Logic and Communication
摘要： Light-based information processing has the potential to increase speed, security and scalability of electronics if issues in the device complexity could be resolved. We here demonstrate an integrated nano-electronic device that can combine, store, and manipulate optical and electronic information. Employing a mechanically flexible and multilayered structure, a device is realized that shows memristive behavior. Illumination is shown to control the device operation in several unique ways. First, the device produces photocurrent that allows us to read out the device state in a self-powered manner. More importantly, a varying light intensity modulates the switching transition in a proportional manner that is akin to a neuron with variable plasticity and which can be taught and queried using either light or electrical inputs. This behavior enables a multi-level light-controlled logic and teaching schemes that can be applied to light-based communication devices and provides a route towards ubiquitous and low-cost sensors for future internet of things applications.
关键词： light-based communication,memory,hybrid optoelectronics,light fidelity,memristor
更新于2025-09-23 15:23:52
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Utilizing embedded ultra-small Pt nanoparticles as charge trapping layer in flashristor memory cells
摘要： In this study, a methodology for producing highly controlled and uniformly dispersed metal nanoparticles were developed by atomic layer deposition (ALD) technique. All-ALD grown thin film flash memory (TFFM) cells and their applications were demonstrated with ultra-small platinum nanoparticles (Pt-NPs) as charge trapping layer and control tunnel oxide layer. The ultra-small Pt-NPs possessed sizes ranging from 2.3 to 2.6 nm and particle densities of about 2.5 × 1013 cm–b. The effect of Pt-NPs embedded on the storage layer for charging was investigated. The charging effect of ultra-small Pt-NPs the storage layer was observed using the electrical characteristics of TFFM. The Pt-NPs were observed by a high-resolution scanning electron microscopy (HR-SEM). The memory effect was manifested by hysteresis in the IDS-VDS and IDS-VGS curves. The charge storage capacity of the TFFM cells demonstrated that ALD-grown Pt-NPs in conjunction with ZnO layer can be considered as a promising candidate for memory devices. Moreover, ZnO TFFM showed a ION/IOFF ratio of up to 52 orders of magnitude ?a/b – Vgs curve. Fabricated TFFMs exhibited clear pinch-off and show n-type field effect transistor (FET) behavior. The role of atomic-scale controlled Pt-NPs for improvement of devices were also discussed and they indicated that ALD-grown Pt-NPs can be utilized in nanoscale electronic devices as alternative quantum dot structures.
关键词： ZnO,Thin film flash memory,Pt nanoparticle,Atomic layer deposition,Memristor
更新于2025-09-23 15:21:21
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Fluorinated graphene nanoparticles with 1-3 nm electrically active graphene quantum dots
摘要： A new perspective approach to how to create a new and locally nanostructured graphene-based material is reported on. We studied the electric and structural properties for the partially fluorinated graphene (FG) films obtained from a FG-suspension and nanostructured by high-energy Xe ions. Local shock heating in ion tracks is suggested to be the main driving force of the changes. It was found that ion irradiation leads to the formation of locally thermal expanded FG and its cracking into nanosized nanoparticles with embedded small (~1.5-3 nm) graphene quantum dots, which band gap was estimated as 1-1.5 eV, into them. A further developed approach was applied to correction of the functional properties of the printed FG-based crossbar memristors. Dielectric FG films with small quantum dots may offer prospects in graphene-based electronics due to their stability and promising properties.
关键词： memristor,molecular dynamics simulation,nanostructuring,swift ion irradiation,fluorinated graphene,graphene quantum dots
更新于2025-09-23 15:21:01
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Passive Filters for Nonvolatile Storage Based on Capacitive-Coupled Memristive Effects in Nanolayered Organic-Inorganic Heterojunction Devices
摘要： It is well known that the reprogrammable device is one of the important needs for circuit design. In this paper, nanolayered TiO2 and maple leaves (ML) are combined to form a functional layer (TiO2-ML) inside memristive devices, which demonstrate both the capacitive effect and the non-volatile storage capability. When the voltage increases from zero, the device firstly enters a capacitive-coupled memristive state at low voltage before switch to normal memristive state at a higher voltage. The existence of the capacitive behavior results in a non-zero-crossing I-V characteristic different from the zero-crossing curve observed in normal memristive device. Utilizing this capacitive-coupled memristive behavior, we design a low power passive filter with applications towards reprogrammable analog circuit designs, paving a path towards multifunctional nanodevice in future.
关键词： capacitive effect,memristor,organic-inorganic,heterojunction,passive filter
更新于2025-09-23 15:21:01
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Memory characteristics of microcavity dielectric barrier discharge
摘要： The nonlinear resistance characteristics of microcavity dielectric barrier discharge are mainly studied in the paper. A simulation model of microcavity dielectric barrier discharge is herein built to study the relationship between voltage and current in the process of discharge, and thus its I–V characteristic curve can be obtained. The I–V characteristics of the memristor are analyzed and compared with the I–V characteristics of the dielectric barrier discharge; it can be found that the I–V characteristics of the microcavity dielectric barrier discharge are similar to the characteristics of the memristor by analyzing them. The memory characteristics of microcavity dielectric barrier discharge are further analyzed.
关键词： memristor,memory characteristics,microcavity dielectric barrier discharge,I–V characteristic
更新于2025-09-23 15:21:01
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Ambipolar Memristive Phenomenon in Large-Scale, Few-Layered αMoO <sub/>3</sub> Recrystallized Films
摘要： Studies of two-dimensional (2D) oxide materials are not common, primarily because of the difficulty in obtaining crystal sizes large enough to fabricate devices structures from exfoliation of bulk crystals. Among the layered oxide materials, alpha molybdenum trioxide (αMoO3) is of particular interest because of its wide bandgap and high hole mobility. Here the growth of highly uniform, large-scale, ambipolar, few-layered αMoO3 that is appropriate for nanofabrication is reported. Crystal grain sizes on the order of 5 μm are observed across samples as large as 10 × 10 mm2 with hexagonal grain boundaries and surface roughness of less than 500 pm rms. Exact [010] crystal orientation, characteristic of the layered atomic structure αMoO3, is observed. The measured bandgap energy is ≈2.8 eV. Carrier mobilities in polycrystalline films are and 2.28 cm2 V?1 s?1 (hole) and 3.18 cm2 V?1 s?1 (electron) at room temperature in air. Simple field-effect device structures are characterized by ambipolar carrier transport producing memristive device characteristics, which is attributed to a polarization field produced by the strong coupling between electron and phonons in these crystals.
关键词： ambipolar,2D materials,molybdenum oxides,memristor
更新于2025-09-23 15:21:01
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[IEEE 2019 Workshop on Recent Advances in Photonics (WRAP) - Guwahati, India (2019.12.13-2019.12.14)] 2019 Workshop on Recent Advances in Photonics (WRAP) - Characteristics of transient underwater acoustic signal from laser-induced plasma formation
摘要： Diverse models have been proposed over the past years to explain the exhibiting behavior of memristors, the fourth fundamental circuit element. The models varied in complexity ranging from a description of physical mechanisms to a more generalized mathematical modeling. Nonetheless, stochasticity, a widespread observed phenomenon, has been immensely overlooked from the modeling perspective. This inherent variability within the operation of the memristor is a vital feature for the integration of this nonlinear device into the stochastic electronics realm of study. In this paper, experimentally observed innate stochasticity is modeled in a circuit compatible format. The model proposed is generic and could be incorporated into variants of threshold-based memristor models in which apparent variations in the output hysteresis convey the switching threshold shift. Further application as a noise injection alternative paves the way for novel approaches in the fields of neuromorphic engineering circuits design. On the other hand, extra caution needs to be paid to variability intolerant digital designs based on nondeterministic memristor logic.
关键词： neuromorphics,threshold-based devices,Memristor,stochasticity,memristor model,stochastic electronics
更新于2025-09-23 15:19:57