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Bandwidth Extension of Planar Microstrip-to-Waveguide Transition by Controlling Transmission Modes Through Via-Hole Positioning in Millimeter-Wave Band
摘要： This paper presents a design technique to achieve a broadband planar microstrip-to-waveguide transition in a millimeter-wave (mmWave) band. In the conventional planar microstrip-to-waveguide transition, via holes are located around the rectangular waveguide and microstrip line to prevent power leakage due to the generation of a multi-transmission mode. Therefore, a single-transmission mode is dominant at the input port of the transition, with a narrow bandwidth of the single resonance. In the broadband planar microstrip-to-waveguide transition, via-hole positioning is utilized to add inductance to constrain the predominance of the single-transmission mode at the input port of the transition. The double-resonant frequency yielded by excitation of the grounded coplanar waveguide transmission mode and parallel plate transmission mode is obtained by controlling the positions of holes adjacent to the microstrip line. Moreover, to simplify the structure and meet the requirement of high assembly accuracy in fabrication, two holes adjacent to the microstrip line are maintained, but the remaining holes are replaced by a choke structure that performs the equivalent function to the via-hole arrangement. The influences of the multi-transmission mode and choke structure on the characteristics are investigated by electromagnetic analysis, and the feasibility is confirmed by experiments in this work. A double-resonant frequency and a broad bandwidth of 10.6 GHz (13.8%) are obtained. The measured results of the broadband planar microstrip-to-waveguide transition using via-hole positioning show an insertion loss of 0.41 dB at the center frequency of 76.5 GHz.
关键词： Microwave and millimeter-wave circuits,broadband,waveguide transition,multi-transmission mode,microstrip transition
更新于2025-09-16 10:30:52
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Design of a MMIC low-noise amplifier in industrial gallium arsenide technology for E-band 5G transceivers
摘要： The technology, design procedure and measurements of an E-band (71-86 GHz) high performance gallium arsenide (GaAs) low-noise amplifier (LNA) are presented. The latter provides a gain in excess of 20 dB, an average in-band noise figure (NF) of 2.3 dB, absorbing 60 mW DC bias power. A European space-qualified technology (OMMIC’s GaAs 70 nm process) has been selected to demonstrate the feasibility of employing the proposed LNA for production-ready wireless backhaul point-to-point communication systems. A possible installation scenario has been depicted, in order to verify the maximum distance at which TX and RX antennas can be placed and employing the proposed LNA as first amplifying stage of the receiver chain.
关键词： LNA,GaAs,E-band,MMIC,millimeter wave circuits
更新于2025-09-10 09:29:36
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[IEEE 2018 15th European Radar Conference (EuRAD) - Madrid, Spain (2018.9.26-2018.9.28)] 2018 15th European Radar Conference (EuRAD) - An Integrated Coherent Startup 79-GHz Pulse Oscillator for a Sequential Sampling Pulse Radar
摘要： An approach to achieve a coherent startup condition, as it is required for the operation of a sequential sampling pulse radar, with a differential 79-GHz VCO is presented. The proposed VCO is fabricated in a 250-GHz fT SiGe BiCMOS technology. Theoretical boundaries and results from simulations are verified by measurements. The measured phase jitter of the VCO was less than 1.17 ps rms across the entire tuning range from 77 GHz to 83 GHz.
关键词： MMICs,Voltage-controlled oscillators,Pulse modulation,Pulsed circuits,Microwave integrated oscillators,Millimeter wave circuits,Oscillators
更新于2025-09-04 15:30:14