研究目的
To demonstrate the feasibility of employing a high performance gallium arsenide (GaAs) low-noise amplifier (LNA) for production-ready wireless backhaul point-to-point communication systems at E-band frequencies.
研究成果
The feasibility of low-noise amplification at E-band, using an ITAR-free industrial-grade technology, has been demonstrated. The proposed MMIC, realized with OMMIC’s space qualified 70 nm GaAs process, features an average NF of 2.3 dB with more than 20 dB gain at E-band. The process exhibits high yield and uniform behavior. A possible installation scenario has been validated, allowing the antennas to be placed at a distance greater than 1.3 km, therefore mitigating installation issues and deployment cost.
研究不足
The technology and design methodology are focused on achieving specific performance metrics (NF, gain, etc.) within the E-band frequency range, which may limit applicability to other frequency bands or applications requiring different performance characteristics.
1：Experimental Design and Method Selection:
The design flow is oriented towards obtaining very low NF (<3 dB) and limited ripple (<3 dBpp) over the wide operating bandwidth, associated to high gain (>20 dB) and prescribed port impedance matching (<?7 dB). A four stage topology was determined as being a suitable trade-off to simultaneously obtain the requested gain value without compromising stability requirements.
2：Sample Selection and Data Sources:
The technology selected is OMMIC’s foundry and in particular its D007IH process. The active device is a 70 nm channel length metamorphic-HEMT.
3：List of Experimental Equipment and Materials:
The characterization setup is composed of a MS4647B VNA matched with the 3739C broadband test set and two 3743A mmWave modules from 70 kHz up to 110 GHz. The MMIC is contacted by means of two RF and two DC probes fabricated by Picoprobe.
4：Experimental Procedures and Operational Workflow:
The inductive feedback was obtained by inserting a thin microstrip line acting as a series inductor in the considered frequency range. Quarter wavelength series and shunt stubs were employed for transistor biasing.
5：Data Analysis Methods:
The noise characterization setup is based on the cold-source method, with 50 Ω source termination, and uses full vector correction.
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