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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • electron-transparent membranes
  • micropump
  • field emission electron source
  • ion source
  • ion mobility spectrometry
应用领域
  • Optoelectronic Information Science and Engineering
机构单位
  • Wroclaw University of Science and Technology
209 条数据
?? 中文（中国） ▾

  • 24.1: <i>Invited Paper:</i> Flexible Oxide TFTs for Bendable and flexible displays

    摘要： We review in this talk the highly stable, high performance E/S a-IGZO TFT on plastic substrate by using split active and S/D electrodes. The TFTs exhibit high mobility of 74 cm2/Vs and extremely stable behavior under bias-stress and mechanical stress. The TFT process is same as conventional one with only design change. Therefore, this technology can be used for the manufacturing of flexible and bendable AMOLED on plastic substrate

    关键词： thin-film transistor (TFT),high mobility,Oxide,split

    更新于2025-09-10 09:29:36

  • Optical properties of p-type SnOx thin films deposited by DC reactive sputtering

    摘要： Refractive index (n), extinction coefficient (k), effective complex dielectric function (ε) and band gap energy (Eg) of p-type SnOx thin films from 0.75 to 4 eV are studied. 25 nm thick films were deposited by direct current (DC) magnetron sputtering in reactive argon and oxygen atmosphere at different relative oxygen partial pressure (OPP) followed by a post annealing treatment at 250 °C in air atmosphere for 30 min. The relative high Hall effect mobility (μ) of the SnOx was attributed to the dominant SnO phase in films grown at 15% OPP. Films deposited at 5 and 11% OPP showed incomplete Sn oxidation resulting in a mixture of Sn and SnO phases with lower hole mobility. Optical transmittance (T) and reflectance (R) are described by assuming a model where the p-type SnOx films are defined by a dispersion formula based on a generalization of the Lorentz oscillator model. The roughness of the films (r) was modeled by a Bruggeman effective medium approximation (BEMA). From the optical analysis, k in the visible spectral region show high values for films with phase mixture, while films with single SnO phase presented negligible values. Films with single SnO phase have low n, this latter result from the lower compact microstructure of these films. Also, energies associated to direct and indirect transitions of the Brillouin zone of the SnOx films were identified from the evaluated ε. Finally, the increase in the values of Eg energy was related to the increase in the SnO phase.

    关键词： p-type SnOx,optical properties,Hall effect mobility,thin films,DC reactive sputtering

    更新于2025-09-10 09:29:36

  • Impact of alkyl chain branching positions on molecular packing and electron transport of dimeric perylenediimide derivatives

    摘要： Side chains play a critical role in tuning intermolecular interaction and charge transport in organic semiconductors. Here, we have systematically investigated the impact of branching positions of the alkyl side chains on the molecular packing and electron transport properties of a series of bay-linked dimeric perylenediimide (PDI) derivatives by atomistic molecular dynamics simulations in combination with charge transfer rate theory and kinetic Monte Carlo simulations. The results show that despite of different branching positions of the alkyl chains, π –π stacking is effectively inhibited for all the dimeric PDI derivatives. As the branching position moves away from the PDI backbone, the appearance of the alkyl atoms around the PDI backbone will first decrease and then increase. Correspondingly, the short contacts between the PDI moieties are first enhanced and then reduced. In particular, when the branching position is at the third carbon atom, the intermolecular connectivity becomes the most effective and the electron mobility is significantly increased by 2 times.

    关键词： Electron mobility,Branching position,Perylenediimide,Molecular packing

    更新于2025-09-10 09:29:36

  • Advances in Chemical Mechanical Planarization (CMP) || CMP processing of high mobility?channel materials

    摘要： Due to the approaching physical limits for further shrinking and scaling, an alternative way to keep the pace for performance increases of future complementary metal-oxide semiconductor (CMOS) devices is the introduction of high mobility channel materials. The implementation of these alternative materials is targeted for the technology nodes from 10 nm onward. In order to achieve low power and high performance logic devices, the scaling supply voltage (Vdd) has to be optimized. This can be achieved by using materials that have a very high mobility such as Ge (for p-type metal-oxide semiconductors (pMOS)) and IIIeV (for n-type metal-oxide semiconductors (nMOS)) (Skotnicki and Boeuf, 2010). For the fabrication of working devices, gate leakage through the buffer layer needs to be minimized, for example, through doping the buffer layer or by removing the leakage path altogether in a gate-all-around approach. Mobility can be maximized, for example, by deliberate material doping as well as by adjusting the strain and defectivity of the channel layer. The most promising material candidates are Ge for pMOS devices and InGaAs for nMOS devices. The reason for this is the high hole mobility of Ge and the high electron mobility of InGaAs. The hole mobility of a bulk Ge layer is approximately four times and the electron mobility of a bulk InGaAs layer is approximately six times higher when compared to the mobilities of a bulk Si layer. High performance for Ge-based pMOS devices has been demonstrated on a Si platform (Mitard et al., 2009). But in current CMOS devices the Si layer takes advantage of straining methods, which results in higher mobilities; so for the implementation of Ge the application of strain needs also to be considered. However, for InGaAs nMOS devices strain does not improve performance, which could be viewed as an advantage because straining devices becomes harder with more scaling.

    关键词： SiGe,CMP,IIIeV,Ge,CMOS,high mobility channel materials

    更新于2025-09-10 09:29:36

  • Extremely reduced dielectric confinement in two-dimensional hybrid perovskites with large polar organics

    摘要： Two dimensional inorganic–organic hybrid perovskites (2D perovskites) suffer from not only quantum confinement, but also dielectric confinement, hindering their application perspective in devices involving the conversion of an optical input into current. In this report, we theoretically predict that an extremely low exciton binding energy can be achieved in 2D perovskites by using high dielectric-constant organic components. We demonstrate that in (HOCH2CH2NH3)2PbI4, whose organic material has a high dielectric constant of 37, the dielectric confinement is largely reduced, and the exciton binding energy is 20-times smaller than that in conventional 2D perovskites. As a result, the photo-induced excitons can be thermally dissociated efficiently at room temperature, as clearly indicated from femtosecond transient absorption measurements. In addition, the mobility is largely improved due to the strong screening effect on charge impurities. Such low dielectric-confined 2D perovskites show excellent carrier extraction efficiency, and outstanding humidity resistance compared to conventional 2D perovskites.

    关键词： dielectric confinement,humidity resistance,carrier mobility,exciton binding energy,2D perovskites

    更新于2025-09-10 09:29:36

  • High-mobility indirect excitons in wide single quantum well

    摘要： Indirect excitons (IXs) are bound pairs of electrons and holes confined in spatially separated layers. We present wide single quantum well (WSQW) heterostructures with high IX mobility, spectrally narrow IX emission, voltage-controllable IX energy, and long and voltage-controllable IX lifetime. This set of properties shows that WSQW heterostructures provide an advanced platform both for studying basic properties of IXs in low-disorder environments and for the development of high-mobility excitonic devices.

    关键词： spectrally narrow emission,indirect excitons,voltage-controllable energy,wide single quantum well,long lifetime,high mobility

    更新于2025-09-10 09:29:36

  • Enhancement in surface mobility and quantum transport of Bi2?xSbxTe3?ySey topological insulator by controlling the crystal growth conditions

    摘要： Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods on the synthesis of single crystal stoichiometric BiSbTeSe2 (BSTS). Three types of BSTS samples are prepared using three different methods, namely melting growth (MG), Bridgman growth (BG) and two-step melting-Bridgman growth (MBG). Our results show that the crystal quality of the BSTS depend strongly on the growth method. Crystal structure and composition analyses suggest a better homogeneity and highly-ordered crystal structure in BSTS grown by MBG method. This correlates well to sample electrical transport properties, where a substantial improvement in surface mobility is observed in MBG BSTS devices. The enhancement in crystal quality and mobility allow the observation of well-developed quantum Hall effect at low magnetic field.

    关键词： two-step melting-Bridgman growth,three-dimensional topological insulators,surface mobility,quantum Hall effect,Bridgman growth,melting growth,BiSbTeSe2

    更新于2025-09-10 09:29:36

  • Theoretical study of charge-transport and optical properties of indeno[1,2- <i>b</i> ]fluorene-6,12-dione-based semiconducting materials

    摘要： The conducting and optical properties of a series of indeno[1,2-b]fluorene-6,12-dione (IFD)-based molecules have been systematically studied and the influences of butyl, butylthio and dibutylamino substituents on the reorganization energies, intermolecular electronic couplings and charge-injection barriers of IFD have been discussed. The quantum-chemical calculations combined with electron-transfer theory reveal that the incorporation of sulfur-linked side chains decreases reorganization energy associated with hole transfer and optimizes intermolecular π–π stacking, which results in excellent ambipolar charge-transport properties (μh = 1.15 cm2 V?1 s?1 and μe = 0.08 cm2 V?1 s?1); in comparison, addition of dibutylamino side chains increases intermolecular steric interactions and hinders perfect intermolecular π–π stacking, which results in the weak electronic couplings and finally causes the low intrinsic hole mobility (μh = 0.01 cm2 V?1 s?1). Furthermore, electronic spectra of butyl-IFD, butylthio-IFD and dibutylamino-IFD were simulated and compared with the reported experimental data. Calculations demonstrate that IFD-based molecules possess potential for developing novel infrared and near-infrared probe materials via suitable chemical modifications.

    关键词： intrinsic electron mobility,structure–function relationship,indeno[1,2-b]fluorene-6,12-dione-based molecules,density functional theory (DFT),intrinsic hole mobility,electronic spectra

    更新于2025-09-09 09:28:46

  • Full W-Band GaN Power Amplifier MMICs Using a Novel Type of Broadband Radial Stub

    摘要： In this paper, we describe the design of the first reported full W-band (75–110 GHz) power amplifier (PA) monolithic microwave integrated circuits (MMICs) based on gallium nitride technology. The discussed MMICs come in two versions. Over a bandwidth (BW) of 70–110 GHz, the three-stage PA can deliver, on average, 25.6 dBm with a power-added efficiency (PAE) of 6.5%, while the four-stage PA is able to generate 27 dBm with a PAE of 6.1%. A peak output power of 28.6 dBm is achieved at 80 GHz with a PAE of 8.6%, which corresponds to a power density of 2.6 W/mm. The significant BW was achieved partially by incorporating a novel type of broadband radial stub into the design, which can provide nearly a twofold rejection-BW improvement over the conventional version. To the best of our knowledge, no other solid-state circuit can deliver such power levels over the complete W-band.

    关键词： monolithic microwave integrated circuit (MMIC),Broadband,power amplifier (PA),high-electron-mobility transistor (HEMT),W-band (75–110 GHz),radial stub,gallium nitride,millimeter-waves (mm-waves)

    更新于2025-09-09 09:28:46

  • Engineering SrSnO <sub/>3</sub> Phases and Electron Mobility at Room Temperature Using Epitaxial Strain

    摘要： High-speed electronics require epitaxial films with exceptionally high carrier mobility at room temperature. Alkaline-earth stannates with high room-temperature mobility show outstanding prospects for oxide electronics operating at ambient temperatures. However, despite significant progress over the last few years, mobility in stannate films has been limited by dislocations due to the inability to grow fully coherent films. Here, we demonstrate the growth of coherent, strain-engineered phases of epitaxial SrSnO3 (SSO) films using a radical-based molecular beam epitaxy approach. Compressive strain stabilized the high-symmetry tetragonal phase of SSO at room temperature (RT), which, in bulk, exists only at temperatures between 1062 K and 1295 K. We achieved a mobility enhancement of over 300% in doped films compared with the low temperature orthorhombic polymorph. Using comprehensive temperature-dependent synchrotron-based X-ray measurements, electronic transport and first principles calculations, crystal and electronic structures of SSO films were investigated as a function of strain. We argue that strain-engineered films of stannate will enable high mobility oxide electronics operating at RT with the added advantage of being optically transparent.

    关键词： phase transition,Hybrid molecular beam epitaxy,half-order diffraction,strain engineering,density functional theory,high mobility,Octahedral rotations

    更新于2025-09-09 09:28:46