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MAPbI3 nanowires prepared by a facile Vapor Transfer Method for simple photodetector
摘要： MAPbI3 nanowires have become one of the promising materials for optoelectronic devices. Herein, a simple template-free vapor transfer approach to synthesize MAPbI3 nanowires on various substrates for optoelectronic device developed. High crystalline MAPbI3 nanowires were realized via methyl-ammonium iodide (MAI) vapor transfer treatment with PbI2 nanowires. PbI2 nanowires were prepared by a self-assembled procedure where PbI2 film was recrystallized and converted to nanowires structure with the exposure of dimethylacetamide (DMAC) vapor. On top of that, the density of MAPbI3 nanowires could be modulated by simply tuning the thickness of PbI2 film. The as-fabricated MAPbI3 nanowires photodetector exhibits a satisfying responsivity of 0.115 A W-1 @3V while the rise time is less than 0.63 s and the decay time is less than 0.73 s. The study presents a bright future of MAPbI3 nanowires for optoelectronic application.
关键词： vapor transfer method,organic mixed halide perovskite,nanowires,nanocrystalline materials,photodetector,sensors
更新于2025-09-11 14:15:04
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Electrochemiluminescent immunoassay for neuron specific enolase by using amino-modified reduced graphene oxide loaded with N-doped carbon quantum dots
摘要： An ultrasensitive electrochemiluminescence based sandwich immunoassay is presented for determination of neuron specific enolase. The method uses silver-cysteine nanowires as the capture probe and a composite made of amino-modified reduced graphene oxide and nitrogen-doped carbon quantum dots as the signal probe. It was synthesized by covalent coupling of amino-modified reduced graphene oxide to the carboxy groups of nitrogen-doped carbon quantum dots. The nanowires possess a large specific surface and abundant functional groups which facilitate immobilizing the primary antibody (Ab1). The amino-modified reduced graphene oxide is employed as a carrier for loading a large number of the quantum dots and secondary antibody (Ab2). This increases the electrochemiluminescence intensity of quantum dots. Response to neuron specific enolase is linear in the 0.55 fg·mL?1 to 5.5 ng·mL?1 concentration range. It has a detection limit of 0.18 fg·mL?1 (at S/N = 3). The relative standard deviation (for n = 6) is less than 2.9%. The assay is highly sensitive, reproducible, selective and stable.
关键词： Silver-cysteine nanowires,Sensor,Neuron specific enolase,Carbon quantum dots,Graphene oxide
更新于2025-09-11 14:15:04
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Promising Hybrid Graphene-Silver Nanowire Composite Electrode for Flexible Organic Light-Emitting Diodes
摘要： Thanks to its high transparency, high carrier mobility, and thermal conductivity, graphene is often used as transparent conductive electrode (TCE) in optoelectronic devices. However, the low carrier concentration and high resistance caused by vacancy defects, grain boundaries, and superposed folds in typical graphene films limit its application. In this study, we propose a method to increase both the conductivity and carrier concentration in single-layer graphene (SLG) by blending it with silver nanowires (AgNWs). AgNWs provide connections between grain boundaries of graphene to improve charge-carrier transport. The AgNWs in this study can reduce the resistance of SLG from 650 Ω/? to 27 Ω/? yet still maintain a transmittance of 86.7% (at 550 nm). Flexible organic light-emitting diode, with a maximum 15000 cd m?2 luminance was successfully fabricated using such graphene and AgNWs composite transparent electrodes.
关键词： Silver nanowires,Graphene,Transparent conductive electrode,Optoelectronic devices,Flexible OLED
更新于2025-09-11 14:15:04
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Influence of Quantum Dot Characteristics on the Performance of Hybrid SET-FET Circuits
摘要： Quantum dots (QDs) can be used as conductive islands to build-up single-electron transistors (SETs). The characteristics of the QDs define the functional performance of the SETs. In consequence, analyzing the influence of the variations of QD dimensions on the performance of hybrid SET-FET circuits is of high relevance. We employ a self-developed SET compact model which is calibrated to 3-D quantum-mechanics-based simulations in order to obtain realistic model parameters. A method to improve the circuit behavior, i.e., to increase the output current, is proposed. It is concluded that the variation of the QD size presents the largest influence on the overall circuit behavior.
关键词： variability,single-electron transistor (SET),quantum dot (QD),Nanowires
更新于2025-09-11 14:15:04
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[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Orientation controlled GaSb nanowires: from growth to application
摘要： In recent years, high-mobility GaSb nanowires have received tremendous attention for high-performance p-type transistors; however, due to the difficulty in achieving thin, uniform and orientation-controlled nanowires (NWs), there is limited report until now addressing their orientation-dependent properties in this important one-dimensional material system, where all these are essential information for the deployment of applications. Using various GaSb NWs CMOS-compatible Pd catalysts, we demonstrated the formation of high-mobility (cid:1766)111(cid:1767)-oriented GaSb nanowires (NWs) via vapor-solid-solid (VSS) growth by the newly developed surfactant-assisted chemical vapor deposition through a complementary experimental and theoretical approach. In contrast to NWs formed by the conventional vapor-liquid-solid (VLS) mechanism, cylindrical-shaped Pd5Ga4 catalytic seeds were present in solid catalysts, our Pd-catalyzed VSS-NWs. As stoichiometric Pd5Ga4 was found to have the lowest crystal surface energy and thus giving rise to a minimal surface diffusion as well as an optimal in-plane interface interface for efficient orientation at epitaxial NW nucleation. Over 95% high crystalline quality NWs were grown in (cid:1766)111(cid:1767) orientation for a wide diameter range of between 10 and 70 nm. Back-gated the field-effect Pd-catalyzed GaSb NWs exhibit a superior peak hole mobility of ～330 cm2 V-1 s-1, close to the mobility limit for a NW channel diameter of ～30 nm with a free carrier concentration of ～1018 cm-3. This suggests that the NWs have excellent homogeneity in phase purity, growth orientation, electrical characteristics. Contact printing process was also used to fabricate large-scale assembly of Pd-catalyzed GaSb NW parallel arrays, confirming the potential constructions and applications of these high-performance electronic devices.
关键词： vapor-solid-solid growth,GaSb nanowires,high-mobility,CMOS-compatible,orientation-controlled
更新于2025-09-11 14:15:04
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Synthesis of orthogonally assembled 3D cross-stacked metal oxide semiconducting nanowires
摘要： Assemblies of metal oxide nanowires in 3D stacks can enable the realization of nanodevices with tailored conductivity, porous structure and a high surface area. Current fabrication methods require complicated multistep procedures that involve the initial preparation of nanowires followed by manual assembly or transfer printing, and thus lack synthesis flexibility and controllability. Here we report a general synthetic orthogonal assembly approach to controllably construct 3D multilayer-crossed metal oxide nanowire arrays. Taking tungsten oxide semiconducting nanowires as an example, we show the spontaneous orthogonal packing of composite nanorods of poly(ethylene oxide)-block-polystyrene and silicotungstic acid; the following calcination gives rise to 3D cross-stacked nanowire arrays of Si-doped metastable ε-phase WO3. This nanowire stack framework was also tested as a gas detector for the selective sensing of acetone. By using other polyoxometallates, this fabrication method for woodpile-like 3D nanostructures can also be generalized to different doped metal oxide nanowires, which provides a way to manipulate their physical properties for various applications.
关键词： gas sensing,metal oxide nanowires,nanodevices,3D stacks,orthogonal assembly
更新于2025-09-11 14:15:04
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Flexible organic photovoltaics based on water-processed silver nanowire electrodes
摘要： A key feature of organic electronic devices is their mechanical flexibility. However, the performance of flexible organic optoelectronic devices still lags behind the performance of devices on rigid substrates. This is due, in particular, to the lack of flexible transparent electrodes that simultaneously offer low resistance, high transparency and a smooth surface. Here, we report flexible transparent electrodes created using water-processed silver nanowires and a polyelectrolyte. Due to ionic electrostatic charge repulsion, the nanowires form grid-like structures in a single step, leading to smooth, flexible electrodes that have a sheet resistance of around 10 Ω □?1 and a transmittance of around 92% (excluding the substrate). To illustrate the potential of the approach in organic electronics, we use the flexible electrodes to create organic photovoltaic devices. The devices are tested with different types of donors and acceptors, and exhibit performance comparable to devices based on commercial rigid electrodes. Furthermore, flexible single-junction and tandem devices achieve power conversion efficiencies of 13.1% and 16.5%, respectively.
关键词： silver nanowires,flexible electronics,transparent electrodes,organic photovoltaics
更新于2025-09-11 14:15:04
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Proximity-induced supercurrent through topological insulator based nanowires for quantum computation studies
摘要： Proximity-induced superconducting energy gap in the surface states of topological insulators has been predicted to host the much wanted Majorana fermions for fault-tolerant quantum computation. Recent theoretically proposed architectures for topological quantum computation via Majoranas are based on large networks of Kitaev’s one-dimensional quantum wires, which pose a huge experimental challenge in terms of scalability of the current single nanowire based devices. Here, we address this problem by realizing robust superconductivity in junctions of fabricated topological insulator (Bi2Se3) nanowires proximity-coupled to conventional s-wave superconducting (W) electrodes. Milling technique possesses great potential in fabrication of any desired shapes and structures at nanoscale level, and therefore can be effectively utilized to scale-up the existing single nanowire based design into nanowire based network architectures. We demonstrate the dominant role of ballistic topological surface states in propagating the long-range proximity induced superconducting order with high IcRN product in long Bi2Se3 junctions. Large upper critical magnetic fields exceeding the Chandrasekhar-Clogston limit suggests the existence of robust superconducting order with spin-triplet cooper pairing. An unconventional inverse dependence of IcRN product on the width of the nanowire junction was also observed.
关键词： Topological insulators,Quantum computation,Nanowires,Majorana fermions,Ballistic topological surface states,Proximity-induced superconductivity,Spin-triplet cooper pairing
更新于2025-09-11 14:15:04
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Magnetic Field Effect of Near-Field Radiative Heat Transfer for SiC Nanowires/Plates
摘要： The SiC micro/nano-scale structure has advantages for enhancing nonreciprocal absorptance for photovoltaic use due to the magneto optical effect. In this work, we demonstrate the near-?eld radiative transfer between two aligned SiC nanowires/plates under different magnetic ?eld intensities, in which Lorentz-Drude equations of the dielectric constant tensor are proposed to describe the dielectric constant as a magnetic ?eld applied on the SiC structure. The magnetic ?eld strength is quali?ed in this study. Using local effective medium theory and the ?uctuation-dissipation theorem, we evaluate the near-?eld radiation between SiC nanowires with different ?lling ratios and gap distances under an external magnetic ?eld. Compared to the near-?eld heat ?ux between two SiC plates, the one between SiC nanowires can be enhanced with magnetic ?eld intensity, a high ?lling ratio, and a small gap distance. The electric ?eld intensity is also presented for understanding light coupling, propagation, and absorption nature of SiC grating under variable incidence angles and magnetic ?eld strengths. This relative study is useful for thermal radiative design in optical instruments.
关键词： near-?eld radiation,SiC nanowires,magnetic ?eld effect
更新于2025-09-11 14:12:44
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On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays
摘要： The field of semiconductor nanowires (NWs) has become one of the most active and mature research areas. However, progress in this field has been limited, due to the difficulty in controlling the density, orientation, and placement of the individual NWs, parameters important for mass producing nanodevices. The work presented herein describes a novel nanosynthesis strategy for ultrathin self-aligned silicon carbide (SiC) NW arrays (≤ 20 nm width, 130 nm height and 200–600 nm variable periodicity), with high quality (~2 ? surface roughness, ~2.4 eV optical bandgap) and reproducibility at predetermined locations, using fabrication protocols compatible with silicon microelectronics. Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopic ellipsometry, atomic force microscopy, X-ray diffractometry, and transmission electron microscopy studies show nanosynthesis of high-quality polycrystalline cubic 3C-SiC materials (average 5 nm grain size) with tailored properties. An extension of the nanofabrication process is presented for integrating technologically important erbium ions as emission centers at telecom C-band wavelengths. This integration allows for deterministic positioning of the ions and engineering of the ions’ spontaneous emission properties through the resulting NW-based photonic structures, both of which are critical to practical device fabrication for quantum information applications. This holistic approach can enable the development of new scalable SiC nanostructured materials for use in a plethora of emerging applications, such as NW-based sensing, single-photon sources, quantum LEDs, and quantum photonics.
关键词： silicon carbide,telecom wavelengths,nanofabrication,self-aligned nanowires,ultrathin nanowires,quantum photonics
更新于2025-09-10 09:29:36