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Facet-selective group-III incorporation in InGaAs Template Assisted Selective Epitaxy
摘要： InGaAs is a potential candidate for Si replacement in upcoming advanced technological nodes because of its excellent electron transport properties and relatively low interface defect density in dielectric gate stacks. Therefore, integrating InGaAs devices with the established Si platforms is highly important. Using template-assisted selective epitaxy (TASE), InGaAs nanowires can be monolithically integrated with high crystal quality, although the mechanisms of group III incorporation in this ternary material have not been thoroughly investigated. Here we present a detailed study of the compositional variations of InGaAs nanostructures epitaxially grown on Si(111) and Silicon-on-insulator substrates by TASE. We present a combination of XRD data and detailed EELS maps and find that the final Ga/In chemical composition depends strongly on both growth parameters and the growth facet type, leading to complex compositional sub-structures throughout the crystals. We can further conclude that the composition is governed by the facet-dependent chemical reaction rates at low temperature and low V/III ratio, while at higher temperature and V/III ratio, the incorporation is transport limited. In this case we see indications that the transport is a competition between Knudsen flow and surface diffusion.
关键词： TASE,nanowires,facet-selective incorporation,InGaAs,compositional variations
更新于2025-09-09 09:28:46
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In-doped Sb nanowires grown by MOCVD for high speed phase change memories
摘要： We investigated the Phase Change Memory (PCM) capabilities of In-doped Sb nanowires (NWs) with diameters of (20-40) nm, which were self-assembled by Metalorganic Chemical Vapor Deposition (MOCVD) via the vapor-liquid-solid (VLS) mechanism. The PCM behavior of the NWs was proved, and it was shown to have relatively low reset power consumption (~ 400 μW) and fast switching capabilities with respect to standard Ge-Sb-Te based devices. In particular, reversible set and reset switches by voltage pulses as short as 25 ns were demonstrated. The obtained results are useful for understanding the effects of downscaling in PCM devices and for the exploration of innovative PCM architectures and materials.
关键词： In-Sb,Nanowires,Phase change memories,XRD,TEM,MOCVD
更新于2025-09-09 09:28:46
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Se—assisted synthesis of WO <sub/>3?x</sub> nanowires and its intrinsic metallicity
摘要： One dimensional WO3?x nanowires were successfully synthesized by a chemical vapor deposition method under a catalysis effect of non-metal selenium at an atmosphere pressure. The morphology ad structural characteristics were investigated by scanning electron microscopy (SEM), atom force microscopy (AFM), and transmission electron microscopy (TEM). Furthermore, X-ray photoelectron spectrum analysis con?rms existence of the oxygen vacancies in WO3?x nanowires. Based on the above results, a possible growth mechanism was proposed. The oxygen vacancy induced metallic nature of WO3?x nanowires was also con?rmed by the single-nanowire electrical measurements.
关键词： oxygen vacancy,metallic,WO3?x nanowires,chemical vapor deposition
更新于2025-09-09 09:28:46
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An Ultrasensitive and Ultraselective Hydrogen Sensor Based on Defect-Dominated Electron Scattering in Pt Nanowire Arrays
摘要： The detection of hydrogen gas has attracted extensive attention due to its wide applications. Here, ultrathin Pt nanowires (3.5 nm) with abundant defects are fabricated by focused ion beam (FIB) for hydrogen detection. Different from the surface-dominated scattering in previous reports where the resistance of Pt decreases after hydrogenation, the Pt hydrogen sensor prepared by FIB is based on defect-dominated electron scattering owing to the abundant defects, i.e., the resistance is dominated by defect scattering, while H atoms will diffuse along the defects and thus enhance the electron scattering and resistance. Thanks to the small volume of H atoms (easy to diffuse along defects), the sensor is very sensitive and selective to hydrogen and exhibits fast response–recovery properties. Moreover, the sensitivity can be improved after the response–recovery loops, which may be ascribed to the generation of extra defects (further accelerating H atom diffusion). After response in pure H2 and recovery in air, the sensor has an ultralow limit of detection (for H2 in air) of 10 ppb. The results present a hydrogen sensor with superior sensitivity and selectivity, which would not only facilitate the development of metal hydrogen sensors, but also provide a feasible strategy for hydrogen detection.
关键词： platinum nanowires,hydrogen sensors,diffusion,defects,resistance
更新于2025-09-09 09:28:46
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Study on the Oxidation of Copper Nanowire Network Electrodes for Skin Mounttable Flexible, Stretchable and Wearable Electronics Applications
摘要： Copper nanowires (Cu NWs) are suitable material as an electrode for flexible, stretchable and wearable devices due to their excellent mechanical properties, high transparency, good conductivity, and low cost, but oxidation problem limits their practical use and application. In order to use Cu NWs as an electrode for advanced flexible, stretchable and wearable devices attached directly to the skin, the influence of the body temperature on the oxidation of Cu NWs needs to be investigated. In this paper, the oxidation behavior of Cu NWs at high temperature (more than 80 °C) as well as body temperature is studied which has been remained largely questionable to date, and an effective encapsulation method is proposed to prevent the oxidation of Cu NWs electrode in the range of body temperatures.
关键词： Copper nanowires,x-ray diffraction,encapsulation,oxidation,wearable electronics
更新于2025-09-09 09:28:46
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Nonlinear coherent perfect photon absorber in asymmetrical atom–nanowires coupling system
摘要： Coherent perfect absorption provides a method of light-controlling-light and has practical applications in optical communications. Recently, a cavity-based nonlinear perfect photon absorption extends the coherent perfect absorber (CPA) beyond the linear regime. As nanowire-based system is a more competitive candidate for full-optical device, we introduce a nonlinear CPA in the single two-level atom–nanowires coupling system in this work. Nonlinear input–output relations are derived analytically, and three contributions of atomic saturation nonlinearity are explicit. The consociation of optical nonlinearity and destructive interference makes it feasible to fabricate a nonlinear monoatomic CPA. Our results also indicate that a nonlinear system may work linearly even when the incoming lights are not weak any more. Our findings show promising applications in full-optical devices.
关键词： single-atom system,nonlinear coherent perfect absorber,atom–nanowires coupling
更新于2025-09-09 09:28:46
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Formation Mechanisms of InGaAs Nanowires Produced by a Solid-Source Two-Step Chemical Vapor Deposition
摘要： The morphologies and microstructures of Au-catalyzed InGaAs nanowires (NWs) prepared by a two-step solid-source chemical vapor deposition (CVD) method were systematically investigated using scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The detailed structural characterization and statistical analysis reveal that two specific morphologies are dominant in InGaAs NWs, a zigzag surface morphology and a smooth surface morphology. The zigzag morphology results from the periodic existence of twining structures, and the smooth morphology results from a lack of twining structures. HRTEM images and energy-dispersive X-ray spectroscopy (EDX) indicate that the catalyst heads have two structures, Au4In and AuIn2, which produce InGaAs NWs in a cubic phase crystalline form. The growth mechanism of the InGaAs NWs begins with Au nanoparticles melting into small spheres. In atoms are diffused into the Au spheres to form an Au-In alloy. When the concentration of In inside the alloy reaches its saturation point, the In precipitate reacts with Ga and As atoms to form InGaAs at the interface between the catalyst and substrate. Once the InGaAs compound forms, additional precipitation and reactions only occur at the interface of the InGaAs and the catalyst. These results provide a fundamental understanding of the InGaAs NW growth process which is critical to the formation of high-quality InGaAs NWs for various device applications.
关键词： HRTEM,Morphology,Formation mechanism,InGaAs nanowires,Microstructures
更新于2025-09-09 09:28:46
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Coupling Layer-by-Layer Assembly and Multilayer Transfer to Fabricate Flexible Transparent Film Heater
摘要： Flexible transparent film heaters (f-TFH) were prepared on a polysulfone (PSU) film with a multilayer transfer of silver nanowires (AgNWs) coated on glass substrates via layer-by-layer (LBL) deposition. First, as-received AgNWs were functionalized with carboxylic acid (AgNW-COOH) and amine (AgNW-NH2) moieties to obtain negatively and positively charged nanowires, respectively. Second, functionalized AgNWs were sequentially coated on a glass substrate via the LBL deposition, which was followed by subjecting the multilayer film to annealing at 125 °C for 30 min to improve the electrical conductivity. Third, the multilayer was transferred from the glass substrate to the polymer film by coating and detaching the PSU. The multilayer film provided optical transmission of 84% and sheet resistance of 12 ?/□ with 5 bilayer sample, which is comparable to indium tin oxide (ITO) film. The f-TFH reached maximum temperature of 128 °C at 7 V with a response time of 45 s. Moreover, it exhibited good defrosting capability by applying 7 V for 20 s. Cyclic bending test results indicated that the sheet resistance of the flexible multilayer film does not demonstrate any change until 300 cycles, while adhesion test 3-M tapes exhibited no sheet resistance change even after 20 peel cycles showing the superior performance of the multilayer film. In addition, the film showed stable heating performance at 128 °C for 5 h.
关键词： Flexible transparent film heater,layer-by-layer deposition,silver nanowires,surface modification,multilayer transfer
更新于2025-09-09 09:28:46
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Self-Assembly Synthesis of Silver Nanowires/Graphene Nanocomposite and Its Effects on the Performance of Electrically Conductive Adhesive
摘要： Among recent advances in electronic packaging technologies, electrically conductive adhesives (ECAs) attract most researchers’ attention, as they are environment-friendly and simple to apply. ECAs also have a lower operating temperature and volume resistivity compared with conventional electronic conductive adhesives. In ECAs, the conducting ?llers play a signi?cant role in improving conductivity and strength. In this work, as ?ller additives, the silver nanowires/ graphene nanocomposites (AgNWs-GNs) were successfully fabricated via a facile self-assembly method. The characteristics of the as-prepared nanocomposites were evaluated by FTIR (Fourier Transform infrared spectroscopy), XRD (X-ray Diffraction), XPS (X-ray photoelectron spectroscopy), TEM (Transmission electron microscope) and Raman tests, demonstrating a successful synthesis process. Different amounts of AgNWs-GNs were used as additives in micron ?ake silver ?ller, and the effects of AgNWs-GNs on the properties of ECAs were studied. The results suggested that the as-synthesized composites can signi?cantly improve the electrical conductivity and shear strength of ECAs. With 0.8% AgNWs/GNs (AgNWs to GO (Graphite oxide) mass ratio is 4:1), the ECAs have the lowest volume resistivity of 9.31 × 10?5 ?·cm (95.4% lower than the blank sample without ?llers), while with 0.6% AgNWs/GNs (AgNWs to GO mass ratio is 6:1), the ECAs reach the highest shear strength of 14.3 MPa (68.2% higher than the blank sample).
关键词： electrically conductive adhesive,volume resistivity,graphene,silver nanowires
更新于2025-09-09 09:28:46
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Strain-tunable quantum integrated photonics
摘要： Semiconductor quantum dots are crucial parts of the photonic quantum technology toolbox, as they show excellent single photon emission properties in addition to their potential as solid state qubits. Recently, there has been an increasing effort to deterministically integrate single semiconductor quantum dots into complex photonic circuits. Despite rapid progress in the field, it remains challenging to manipulate the optical properties of waveguide-integrated quantum emitters, in a deterministic, reversible, and non-intrusive manner. Here we demonstrate a new class of hybrid quantum photonic circuits combining III-V semiconductors, silicon nitride, and piezoelectric crystals. Using a combination of bottom-up, top-down, and nanomanipulation techniques, we realize strain tuning of a selected, waveguide-integrated, quantum emitter and a planar integrated optical resonator. Our findings are an important step toward realizing reconfigurable quantum integrated photonics, with full control over the quantum sources and the photonic circuit.
关键词： ring resonator,nanowires,strain tuning,quantum dot,single photon,quantum integrated photonics
更新于2025-09-09 09:28:46