- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
2D electric-double-layer phototransistor for photoelectronic and spatiotemporal hybrid neuromorphic integration
摘要： The hardware implementation of neuromorphic computing has attracted growing interest as a promising candidate for confronting the bottleneck of traditional von Neumann computers. However, most previous reports are focused on emulating the synaptic behaviors by a mono-mode using an electric-driving or photo-driving approach, resulting in a big challenge to synchronously handle the natural photoelectric information. Herein, we report a multifunctional photoelectronic hybrid-integrated synaptic device based on the electric-double-layer (EDL) MoS2 phototransistor. Interestingly, the electric MoS2 synapse exhibits a potentiation filtering effect, while the photonic counterpart can implement both potentiation and depression filtering effects. Most importantly, for the first time, photoelectronic and spatio-temporal four-dimensional (4D) hybrid integration was successfully demonstrated by the synergic interplay between photonic and electric stimuli within a single MoS2 synapse. An energy band model is proposed to further understand such a photoelectronic and spatio-temporal 4D hybrid coupling mechanism. These results might provide an alternative solution for the size-scaling and intellectualization campaign of the post-Moore era, and for more sophisticated photoelectronic hybrid computing in the emerging neuromorphic nanoelectronics.
关键词： neuromorphic computing,electric-double-layer,synaptic device,MoS2 phototransistor,photoelectronic hybrid integration
更新于2025-11-25 10:30:42
-
Dual-Functional Long-Term Plasticity Emulated in IGZO-Based Photoelectric Neuromorphic Transistors
摘要： Indium–gallium–zinc-oxide (IGZO) photoelectric neuromorphic transistors with low-temperature atomic layer deposited Al2O3 gate dielectrics are fabricated. Dual-functional long-term plasticity, including long-term depression (LTD) and long-term potentiation (LTP), is emulated. The emulation of LTD is achieved by applying high-electrical pulse trains on the gate electrode. The LTP emulation is realized by applying light pulse trains on the IGZO channel layer. The operation mechanisms of the LTD and the LTP are discussed based on the electron/hole trapping in the Al2O3 gate dielectrics and the persistent photoconductivity of the IGZO channel layer.
关键词： Neuromorphic transistors,long-term plasticity,atomic layer deposition
更新于2025-11-25 10:30:42
-
Enhanced finite size and interface mixing effects in iridium manganese ultra thin films
摘要： The finite size and temperature dependent properties of antiferromagnets are of critical importance to a wide range of spintronic and neuromorphic computing devices. Here we present atomistic simulations of IrMn, one of the most technologically important antiferromagnets, in both the ordered (L12) and disordered (γ) phases. We have found that antiferromagnetic IrMn3 films show a stronger finite size dependence of the Néel temperature than an equivalent ferromagnet due to the existence of spin frustration. We also find that the disordered γ-IrMn3 phase shows a dramatic reduction in the Néel temperature to less than room temperature for films less than 1 nm thick. Interfacial intermixing of the IrMn3 with a non-magnetic Cu capping layer further reduces the Néel temperature for a given film thickness, with a stronger influence on the disordered γ-IrMn3 phase compared to the ordered L12-IrMn3 phase. Our results suggest a larger antiferromagnetic film thickness is required for devices operating at or above room temperature compared to an equivalent ferromagnet, particularly for sputtered films with a high degree of interfacial intermixing.
关键词： Néel temperature,antiferromagnets,neuromorphic computing,IrMn,spintronic devices,finite size effects
更新于2025-09-23 15:21:21
-
[IEEE 2019 11th International Symposium on Image and Signal Processing and Analysis (ISPA) - Dubrovnik, Croatia (2019.9.23-2019.9.25)] 2019 11th International Symposium on Image and Signal Processing and Analysis (ISPA) - Acknowledgements
摘要： Phase-change materials and devices have received much attention as a potential route to the realization of various types of unconventional computing paradigms. In this letter, we present non-von Neumann arithmetic processing that exploits the accumulative property of phase-change memory (PCM) cells. Using PCM cells with integrated FET access devices, we perform a detailed study of accumulation-based computation. We also demonstrate efficient factorization using PCM cells, a technique that could pave the way for massively parallelized computations.
关键词： neuromorphic computing,Phase-change materials,non-von Neumann,arithmetic computing
更新于2025-09-23 15:21:01
-
Numerical Implementation of Wavelength-Dependent Photonic Spike Timing Dependent Plasticity Based on VCSOA
摘要： We propose to realize photonic spike timing dependent plasticity (STDP) by using a vertical-cavity semiconductor optical amplifier (VCSOA) subject to dual optical pulse injections. The computational model of the photonic STDP is presented for the first time based on the well-known Fabry–Pérot approach. Through numerical simulations, the dependences of photonic STDP on the bias current of VCSOA and the input powers are analyzed carefully. Besides, the effect of the initial wavelength detuning on the photonic STDP is also explored. It is found that, the current scheme requires much lower bias current and input power to obtain controllable STDP curve when compared with the previously reported photonic STDP circuits; the initial wavelength detuning is an effectively controllable parameter to realize wavelength-dependent photonic STDP. The computational model of the photonic STDP based on a VCSOA is interesting and valuable for numerically simulating of large-scale photonic spiking neural network, and provides a guideline to design low power consumption photonic neuromorphic systems.
关键词： dual optical pulse injections,Vertical-cavity semiconductor optical amplifier,photonic neuromorphic systems,photonic spike timing dependent plasticity,lower power consumption
更新于2025-09-23 15:21:01
-
[IEEE 2019 IEEE Conference on Antenna Measurements & Applications (CAMA) - Kuta, Bali, Indonesia (2019.10.23-2019.10.25)] 2019 IEEE Conference on Antenna Measurements & Applications (CAMA) - 60GHz Substrate Integrated Waveguide Balun
摘要： Phase-change materials and devices have received much attention as a potential route to the realization of various types of unconventional computing paradigms. In this letter, we present non-von Neumann arithmetic processing that exploits the accumulative property of phase-change memory (PCM) cells. Using PCM cells with integrated FET access devices, we perform a detailed study of accumulation-based computation. We also demonstrate efficient factorization using PCM cells, a technique that could pave the way for massively parallelized computations.
关键词： neuromorphic computing,non-von Neumann,Phase-change materials,arithmetic computing
更新于2025-09-23 15:19:57
-
[IEEE 2019 IEEE SENSORS - Montreal, QC, Canada (2019.10.27-2019.10.30)] 2019 IEEE SENSORS - A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector
摘要： Phase-change materials and devices have received much attention as a potential route to the realization of various types of unconventional computing paradigms. In this letter, we present non-von Neumann arithmetic processing that exploits the accumulative property of phase-change memory (PCM) cells. Using PCM cells with integrated FET access devices, we perform a detailed study of accumulation-based computation. We also demonstrate efficient factorization using PCM cells, a technique that could pave the way for massively parallelized computations.
关键词： neuromorphic computing,non-von Neumann,Phase-change materials,arithmetic computing
更新于2025-09-23 15:19:57
-
[IEEE 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) - Portland, OR, USA (2018.10.14-2018.10.17)] 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) - An RRAM with a 2D Material Embedded Double Switching Layer for Neuromorphic Computing
摘要： Resistive random-access memory (RRAM) has shown great potential for neuromorphic engineering, due to its ability of emulating neural network and simple structure. To mimic the brain-learning behavior, two types of neural actions, short-term plasticity (STP) and long-term potentiation (LTP), should be imitated perfectly. In this work, we propose a unique RRAM cell with a double switching layer, in which a 2D material is embedded as a separation layer. Within a proper voltage range of stress, the mobile oxygen ions are blocked by the single atomic layer, and hence the subsequent relaxation of oxygen ions leads to a volatile switching characteristic. Owing to this volatile characteristic, the proposed device can mimic neural actions, STP and LTP, by a simple pulse train with different repetitions and frequencies without the complicated pulse settings of spike-timing-dependent plasticity (STDP). For various future brain-inspired applications, different switching materials with different bind energies and relaxation times of oxygen ions can be utilized.
关键词： LTP,2D materials,neuromorphic engineering,RRAM,STP,transition-metal-oxide,volatile
更新于2025-09-19 17:15:36
-
All Optical Integrate and Fire Neuromorphic Node based on Single Section Quantum Dot Laser
摘要： In this work we provide numerical results concerning an all-optical inhibitory integrate and fire neuron based on a single section quantum-dot InAs/GaAs laser. The numerical model employs a detailed multi-population approach that accommodates electron-hole dynamics and can efficiently describe waveband transitions from both the ground and excited energy state. The underlying physical mechanism of waveband switching in an inhibitory neuron is unveiled and is attributed to hole-electron’s transport time asymmetries. A detailed dynamical analysis allowed the identification of suitable optical injection regimes so as to trigger highly sought neuro-computational behaviors such as rate encoding and neural spikes with picosecond temporal resolution.
关键词： Cognitive computing,neural-networks,semiconductor lasers,neuromorphic,integrate-and fire neuron,quantum-dots,excitability,optical injection,photonic neuron
更新于2025-09-19 17:13:59
-
[IEEE 2019 4th Scientific International Conference Najaf (SICN) - Al-Najef, Iraq (2019.4.29-2019.4.30)] 2019 4th Scientific International Conference Najaf (SICN) - Simulation of Solar Cell and sinusoidal pulse width modulation Inverter Using MATLAB and Proteus
摘要： Resistive switching memory (RRAM) has been proposed as an artificial synapse in neuromorphic circuits due to its tunable resistance, low power operation, and scalability. For the development of high-density neuromorphic circuits, it is essential to validate the state-of-the-art bistable RRAM and to introduce small-area building blocks serving as artificial synapses. This paper introduces a new synaptic circuit consisting of a one-transistor/one-resistor structure, where the resistive element is a HfO2 RRAM with bipolar switching. The spike-timing-dependent plasticity is demonstrated in both the deterministic and stochastic regimes of the RRAM. Finally, a fully connected neuromorphic network is simulated showing online unsupervised pattern learning and recognition for various voltages of the POST spike. The results support bistable RRAM for high-performance artificial synapses in neuromorphic circuits.
关键词： memristive device,neuromorphic network,pattern learning,Artificial synapse,resistive switching memory (RRAM)
更新于2025-09-19 17:13:59