研究目的
To develop a novel RRAM structure with a double switching layer embedded with a 2D material to mimic both short-term plasticity (STP) and long-term potentiation (LTP) for neuromorphic computing applications.
研究成果
The proposed RRAM device with an embedded 2D material layer successfully demonstrates volatile switching characteristics, enabling emulation of both STP and LTP through simple pulse trains. This provides a promising approach for neuromorphic computing by mimicking brain-learning behaviors without complex pulse settings, with potential for future applications using different materials.
研究不足
The study is limited to specific materials (HfO2, MoS2, TiOx) and device structures; reliability issues with CMOS integration are mentioned but not deeply explored. The volatile characteristic may not be stable under all conditions, and further optimization of materials and processes is needed for broader applications.
1：Experimental Design and Method Selection:
The study involves designing and fabricating a RRAM device with a double switching layer structure, incorporating a 2D material (MoS2) as a separation layer to achieve volatile switching characteristics for emulating STP and LTP. DC and pulse measurements are used to characterize the device's electrical properties and neuromorphic behaviors.
2：Sample Selection and Data Sources:
Devices are fabricated with specific materials and dimensions, and measurements are performed on these fabricated samples to collect data on resistance states and current responses.
3：List of Experimental Equipment and Materials:
Equipment includes sputtering system for TiN bottom electrode, ALD for HfO2 deposition, CVD for monolayer MoS2, PDMS for transfer, e-gun evaporator for Ti and Au deposition, Cascade/Agilent B1500A for DC measurement, and Keithley s4200A for pulse measurement. Materials include TiN, HfO2, MoS2, Ti, Au, and PDMS.
4：Experimental Procedures and Operational Workflow:
Fabrication starts with sputtering TiN as bottom electrode, followed by ALD HfO2 deposition. CVD-grown monolayer MoS2 is transferred using PDMS. Ti and Au are deposited by e-gun evaporator with a shadow mask. DC measurements involve voltage sweeps to observe set processes and read currents. Pulse measurements use specific pulse widths, voltages, and periods to assess STP and LTP emulation.
5：Data Analysis Methods:
Data from DC and pulse measurements are analyzed to observe volatile characteristics, resistance state changes, and the effects of pulse repetitions and frequencies on STP and LTP behaviors.
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