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Space charge limited conduction in pulsed laser deposited BaTiO3/LaNiO3 hetero-junctions
摘要： We report the charge transport mechanism in BaTiO3 (BTO) thin film deposited on LaNiO3 (LNO) buffer layer using pulsed laser deposition technique thus, forming the metal – insulator – metal junction (Au/BTO/LNO). The temperature dependent Current density- Voltage (J-V) characteristics were measured, analyzed and compared with the La0.67Ca0.33MnO3 (LCMO) buffered BTO film (Au/BTO/LCMO). Although the mechanism was found to be space charge limited conduction (SCLC) as in case of BTO/LCMO but the absence of Ohmic region in Log J-Log V plot indicates higher injection rate. Various parameters such as trap density, activation energy, and ratio of free to trapped carriers (h) were extracted out from the fitted J-V plot and subsequently their temperature dependence was studied and compared with BTO/LCMO. Higher current density, lower activation energy, lower trap density and higher ratio of free to trapped carriers (h) were observed in BTO/LNO in contrast to BTO/LCMO. Furthermore, the lower activation energy indicates the presence of shallow trap level.
关键词： Non-volatile memories,Barium titanate,Metal-Insulator-Metal junction,Space charge limited conduction,Pulsed laser deposition
更新于2025-09-23 15:19:57
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Enhanced solar- photocatalytic activity for the simultaneous degradation and detoxification of multiple chlorophenols by embedding plasmonic Pt into TiO2/H3PW12O40 nanopore
摘要： A novel Pt-TiO2/H3PW12O40 film was fabricated, which showed a considerable nonselective degradation and detoxification efficiency towards multiple chlorophenols (CPs), owing to the enhanced yield and separation efficiency of photogenerated electrons and holes. Based on the Mott-Schottky analysis, the carrier density of as-prepared Pt-TiO2/H3PW12O40 film reached 9.72 × 1022 cm?1, which was higher than that of Pt-TiO2, TiO2/H3PW12O40, and TiO2. The outstanding properties were attributed to the SPR effect and the formation of electrons traps from Pt0 (which was well protected by the nanopores that were formed by Ti-O-W and Ti-O-P); and H3PW12O40 that can efficiently transport electrons via its self-generated redox cycle. Meanwhile, the Pt-TiO2/H3PW12O40 film considerably lowers ecological risks of multiple CPs because O2?, as the primary radicals, can largely avoid the generation of products with a quinoid structure. The degradation pathways of multiple CPs were similar to those of single CP because the same hydroxyl substitution intermediate products were detected during the degradation, all of which followed the first-order reaction kinetics. Moreover, the excellent recycling performance of the Pt-TiO2/H3PW12O40 film guaranteed the reduction in economic cost and risks of secondary pollution. Therefore, the Pt-TiO2/H3PW12O40 film showed a considerable application potential in the removal of organic contaminants in aqueous environments.
关键词： Acute toxicity,Schottky junction,SPR effect,Multiple CPs,Degradation pathway
更新于2025-09-23 15:19:57
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Passivating contacts and tandem concepts: Approaches for the highest silicon-based solar cell efficiencies
摘要： The efficiency of photovoltaic energy conversion is a decisive factor for low-cost electricity from renewable energies. In recent years, the efficiency of crystalline silicon solar cells in mass production has increased annually by about 0.5–0.6%abs per year. In order to maintain this development speed, new technologies must be developed and transferred to industrial production. After the transition from full area Al back surface field cells to passivated emitter and rear contact cells, passivating contacts are an important step to get as close as possible to the efficiency limit of single junction Si solar cells. The theoretical background and the two prominent technologies for passivating contacts are presented and discussed. After implementing passivating contacts, the fundamental limit of single junction Si solar cells of 29.4% is in reach. Multi-junction solar cells are the most promising option to achieve efficiencies greater than 30%. Tandem technologies based on crystalline silicon as bottom cells have the advantage that they are based on a mature technology established on a gigawatt scale and can partially use the existing production capacity. In addition, silicon has an ideal bandgap for the lower subcell of a tandem solar cell. The two most promising material candidates for the top cell, i.e., III/V and perovskites, will be discussed. The presented technology routes show that silicon is able to maintain its outstanding position in photovoltaics in the coming years.
关键词： perovskites,multi-junction solar cells,III/V,photovoltaic energy conversion,passivating contacts,tandem technologies,crystalline silicon solar cells
更新于2025-09-23 15:19:57
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A study on triple-junction GaInP2/InGaAs/Ge space grade solar cells irradiated by 24.5??MeV high-energy protons
摘要： This paper was reported high-energy proton exposure effects on triple-junction GaInP2/InGaAs/Ge space grade solar cells. In order to explore the degradation of solar cells in hard radiation environments detailed and systematic analysis were performed, and the results were presented. The irradiation process was carried out using 24.5 MeV protons with doses ranging from 0 to 170 Gy. The degradation of output parameters of solar cells was studied as a function of damaged dose using light current–voltage measurements. The current–voltage characteristics indicated that the short circuit current was degraded less than the open circuit voltage because the base sub-cell of GaAs was significantly damaged. To analyze the effects of radiation-induced displacement damage on cell performance SRIM simulation was performed. Capacitance and conductance measurements were done to knowledge about the carrier concentration and interface trap density. A decrease in carrier concentration and a small increase in interface trap density were observed.
关键词： Conductance method,Triple-junction,GaInP2/GaAs solar cells,Proton irradiation
更新于2025-09-23 15:19:57
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Comparative study of conventional and inverted P3HT: PCBM organic solar cell
摘要： This work is a comprehensive comparative study between conventional and inverted bulk hetero-junction (BHJ) Organic Solar Cell (OSC and IOSC) using GPVDM software. Contrary to conventional OSCs with a low work-function cathode located on the top, IOSC is characterized by a bottom transparent conductive oxide cathode. The calculated current-voltage characteristic (J-V) is used to extract the main electrical outputs (figures of merit) of the solar cell: the short circuit current (Jsc), the open circuit voltage (Voc), the fill factor (FF) and the efficiency (η). The effect of a number of physical parameters is studied including thickness of the different layers and materials used as electron (hole) transport layer, ETL (HTL). In addition, different top and bottom electrodes are suggested with mono and multi-thin layer. A comparison between the effect of all these factors in OSC and IOSC is also performed and it was found that IOSC using multi-thin layer ATZ (AZO/TiOx/ZnO) as bottom contact gives the best efficiency of 5.46% in comparison with 5.02% obtained for the conventional OSC with ZnO/TiOx/ZnO contact.
关键词： Organic solar cells,Inverted structure,Bulk hetero-junction,GPVDM Software,Multi-thin layer electrodes
更新于2025-09-23 15:19:57
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Two-Dimensional Quantum Transport in Free-Standing InSb Nanosheets
摘要： Low-dimensional narrow band gap III?V compound semiconductors, such as InAs and InSb, have attracted much attention as one of promising platforms for studying Majorana zero modes and non-Abelian statistics relevant for topological quantum computation. So far, most of experimental studies were performed on hybrid devices based on one-dimensional semiconductor nanowires. In order to build complex topological circuits toward scalable quantum computing, exploring high-mobility two-dimensional (2D) III?V compound electron system with strong spin?orbit coupling is highly desirable. Here, we study quantum transport in high-mobility InSb nanosheet grown by molecular-beam epitaxy. The observations of Shubnikov-de Hass oscillations and quantum Hall states, together with the angular dependence of magnetotransport measurements, provide the evidence for the 2D nature of electronic states in InSb nanosheet. The presence of strong spin?orbit coupling in the InSb nanosheet is veri?ed by the low-?eld magnetotransport measurements, characterized by weak antilocalization e?ect. Finally, we demonstrate the realization of high-quality InSb nanosheet?superconductor junctions with transparent interface. Our results not only advance the study of 2D quantum transport but also open up opportunities for developing hybrid topological devices based on 2D semiconducting nanosheets with strong spin?orbit coupling.
关键词： spin?orbit interaction,quantum Hall effect,InSb nanosheet,two-dimensional transport,Josephson junction
更新于2025-09-23 15:19:57
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[ACM Press the 14th IEEE/ACM International Symposium - Athens, Greece (2018.07.17-2018.07.19)] Proceedings of the 14th IEEE/ACM International Symposium on Nanoscale Architectures - NANOARCH '18 - Programmable Molecular-Nanoparticle Multi-junction Networks for Logic Operations
摘要： We propose and investigate a nanoscale multi-junction network architecture that can be configured on-flight to perform Boolean logic functions at room temperature. The device exploits the electronic properties of randomly deposited molecule-interconnected metal nanoparticles, which act collectively as strongly nonlinear single-electron transistors. Disorder is being incorporated in the modeling of their electrical behavior and the collective response of interacting nano-components is being rationalized. The non-optimized energy consumption of the synaptic grid for a "then-if" logical computation is in the range of few aJ.
关键词： percolation,nonlinear single electron transistors,multi-junction networks,botton-up designless networks,nanoelectrodes,Molecular-Nanoparticle hybrids,Boolean logic operations
更新于2025-09-19 17:15:36
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RETRACTED: A diode based on a chemically-doped SWCNT
摘要： Carbon nanotube p-n junction diodes are expected to be the building block of next generation integrated circuits. A p-i-n junction diode was prepared from a SWCNT with one end p-type doped, the other end n-type doped and the middle segment undoped. The p-type doping was performed using triethyloxonium hexachloroantimonate to form an air stable charge transfer complex (SWCNT+ -SbCl6-) while polyethylene imine was used as an electron donor for the n-type doping. The device showed an excellent performance with a high rectification ratio of 10^3 and a low reverse saturation current of 23 pA.
关键词： p-i-n junction diode,Rectification characteristic,Locally chemical doping,SWCNT
更新于2025-09-19 17:15:36
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Perspective on construction of heterojunction photocatalysts and the complete utilization of photogenerated charge carriers
摘要： Semiconductor photocatalysis has received tremendous attention as a promising way for solving the worldwide energy and environment issues. Many efforts have been devoted to developing distinctive morphology and various semiconductor-based composite photocatalysts for enhancing photocatalytic activity in recent years. However, it is still a great challenge and imperative to profoundly understand the transfer mechanisms and to realize complete utilization of photoexcited charge carriers. This perspective for the first time highlights the inner impetus of the photogenerated charge carrier migration (band-band and Z-scheme transfers) over composite photocatalysts. The notion of relative p-n junction for photocatalysis and the corresponding design principle of Z-scheme photocatalysts are introduced first. Then, simultaneous utilization of photogenerated electrons and holes for photocatalytic selective redox syntheses in one reaction system is recommended. The proposed reaction systems have characteristics of the environmentally friendly, atom economy, synergistic effect and high efficiency. Finally, the challenges and opportunities of photocatalysis are outlined and a perspective is given. We hope that the perspective review could give an inspiration for the fundamental research and guide the research direction of photocatalysis.
关键词： Z-scheme,Inner impetus,Photocatalytic redox,Heterojunction photocatalyst,Relative p-n junction
更新于2025-09-19 17:15:36
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[IEEE 2018 5th NAFOSTED Conference on Information and Computer Science (NICS) - Ho Chi Minh, Vietnam (2018.11.23-2018.11.24)] 2018 5th NAFOSTED Conference on Information and Computer Science (NICS) - Reconfigurable Mode Converter Using Two Silicon Y-Junction Couplers for Mode Division Multiplexing Network
摘要： Mode converters are one of the most fundamental and indispensable components in the mode division multiplexing system. We design a new mode converter that is capable of converting between mode TE0 to TE1/TE2 or TE1 to TE1/TE2 with the performance achieved in both cases over 99% at the wavelength 1550nm. Not only conversion efficiency is high but also the effect of the unwanted modes is very small, it is always below 0.03dB. In addition, with outstanding advantages of the proposed structure such as large manufacturing tolerances and compact size will be good candidate for applications in on-chip MDM network.
关键词： Y-junction,mode converter,WDM
更新于2025-09-19 17:15:36