- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Slot-Die-Printed Two-Dimensional ZrS <sub/>3</sub> Charge Transport Layer for Perovskite Light-Emitting Diodes
摘要： Liquid phase exfoliation of zirconium trisulfide (ZrS3) was used to produce stable and ready-to-use inks for solution processed semiconductor thin film deposition. Ribbon-like layered crystals of ZrS3 were produced by chemical vapor transport method and were then exfoliated in three different solvents: dimethyl formamide, ethanol and isopropyl alcohol. The resulting ZrS3 dispersions were compared for stability and the ability to form continuous films on top of perovskite layer in light-emitting diodes with ITO/PEDOT:PSS/MAPbBr3/2D-ZrS3/LiF/Al structure. Film deposition was performed by using either spray or slot-die coating methods. Slot-die coating route proved to produce better and more uniform films with respect to spray-coating. We found that 2D ZrS3 electron injection layer (EIL) stabilized the interface between the perovskite and LiF/Al cathode, reducing the turn-on voltage to 2.8 V and showing a luminance that does not degrade during voltage sweep. On the opposite, EIL-free devices show electroluminescence on the first voltage sweep that reduces almost to zero in the subsequent sweeps. Combining physical device simulation and Density Functional Theory calculation, we are able to explain these results in terms of lowering of electron injection barrier at the cathode.
关键词： perovskite light emitting diodes,slot-die printing,2D materials,exfoliation,transition metal trichalcogenides,ZrS3
更新于2025-09-11 14:15:04
-
Large-area near-infrared perovskite light-emitting diodes
摘要： The performance of perovskite light-emitting diodes (PeLEDs) has progressed rapidly in recent years, with electroluminescence efficiency now reaching 20%. However, devices, so far, have featured small areas and usually show notable variation in device-to-device performance. Here, we show that the origin of suboptimal device performance stems from inadequate hole injection, and that the use of a hole-transporting polymer with a shallower ionization potential can improve device charge balance, efficiency and reproducibility. Using an ITO/ZnO/PEIE/FAPbI3/poly-TPD/MoO3/Al device structure, we report a 799 nm near-infrared PeLED that operates with an external quantum efficiency (EQE) of 20.2%, at a current density of 57 mA cm?2 and a radiance of 57 W sr?1 m?2. The standard deviation in the device EQE is only 1.2%, demonstrating high reproducibility. Large-area devices measuring 900 mm2 operate with a high EQE of 12.1%, and are shown to suit medical applications such as subcutaneous deep-tissue illumination and heart rate monitoring.
关键词： near-infrared,hole injection,medical applications,perovskite light-emitting diodes,large-area
更新于2025-09-11 14:15:04
-
Effects of n-butyl amine incorporation on the performance of perovskite light emitting diodes
摘要： The efficiency of perovskite light emitting diodes (PeLEDs) is crucially limited by leakage current and nonradiative recombination. Here we introduce n-butyl amine (BA) to modulate the growth of perovskite films as well as improve the performance of PeLEDs, and investigate in details the effects of BA incorporation on the structural, optical, and electrical characteristics of perovskite films. The results indicate that BA would terminate the grain surface and inhibit crystal growth, leading to increased radiative recombination. However, BA overload would make the films loose and recreate shunt paths. The electrical detriment of BA overload outweighs its optical benefit. As a result, optimal PeLEDs can be obtained only with moderate BA incorporation.
关键词： optical and electrical characteristics,butyl amine,crystal growth,bulky organic cations,perovskite light emitting diodes
更新于2025-09-04 15:30:14