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1.6-kV 1.5-kA GaAs Avalanche Semiconductor Switch Triggered by 4 ??J Laser Diode
摘要： A current of 1.54 kA was obtained under a bias voltage of only 1.6 kV by employing a single photoconductive semiconductor switch (PCSS) excited by a laser diode (LD) with energy of 4 μJ. In this work, an opposed contact structure PCSS was used instead of a lateral structure one. We show that a avalanche multiplication rate of PCSS as high as 258 has been obtained. The effects of the electric field strength and of the capacitance on the current waveform were investigated. Moreover, the damping degree was calculated in combination with the current waveform. The calculation indicates that the current attenuation degree increases upon the increase of the capacitance for a fixed value of the electric field strength, whereas the current attenuation degree decreases upon the increase of electric field strength for a fixed charging capacitance. The results obtained in this work show that, by employing opposed contact structure PCSSs in combination with a relatively low bias voltage and laser pulse energy, high-current and long pulse power devices based on inexpensive and compact sources can be produced.
关键词： Photoconductive semiconductor switches (PCSS),laser diode (LD),nonlinear mode
更新于2025-09-16 10:30:52
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Research on Time Jitter of GaAs Photoconductive Semiconductor Switches in the Negative Differential Mobility Region
摘要： Time jitter of GaAs photoconductive semiconductor switches (PCSS) is investigated at an optical excitation of 1053 nm wavelength and 500 ps pulse duration. The experimental results indicate that the time jitter of the GaAs PCSS exhibits a nonmonotonic variation in negative differential mobility (NDM) region. All of these time jitters are lower than the 4% of the rise time of the switching waveform. The optimum time jitter of ~15 ps is achieved at the onset of the NDM region. The theoretical relationship between the optical excitation parameters, the bias electric field and the time jitter of the GaAs PCSS are built up. The nonmonotonic behavior of the time jitter with electric field is attributed to the instability of the relative fluctuation of drift velocity caused by inter-valley transition of carriers in GaAs.
关键词： inter-valley transition of carriers,photoconductive semiconductor switches,gallium arsenide (GaAs),negative differential mobility (NDM),time jitter
更新于2025-09-04 15:30:14