研究目的
Investigating the time jitter of GaAs photoconductive semiconductor switches (PCSS) in the negative differential mobility (NDM) region to understand its behavior and optimize its performance.
研究成果
The time jitter of the GaAs PCSS exhibits a nonmonotonic behavior in the NDM region, with the optimal time jitter of ~15 ps achieved at the onset of the NDM region. The study provides a comprehensive analysis of the factors influencing the time jitter, including optical excitation parameters and bias electric field, contributing to the optimization of PCSS performance.
研究不足
The study is limited to the behavior of time jitter in the NDM region under specific optical excitation conditions. The thermal effect of the carriers at higher electric fields may influence the results.
1：Experimental Design and Method Selection:
The study involves triggering two identical GaAs PCSS with the same laser beam simultaneously to measure time jitter.
2：Sample Selection and Data Sources:
Semi-insulating (SI) GaAs film with a thickness of
3：6 mm was used. List of Experimental Equipment and Materials:
Nd-YLF solid-state laser with 1053 nm wavelength and 500 ps pulse duration,
4：5 GHz oscilloscope (Lecroy 725Zi). Experimental Procedures and Operational Workflow:
The bias voltage was scanned from
5：0 kV to 0 kV with a step of 5 kV. The optical excitation on each GaAs PCSS was fixed at 50 μJ. Data Analysis Methods:
The time jitter was calculated using statistical methods to analyze the standard deviation of the time difference between the triggering and the breakdown of the PCSS.
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