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Broadband photodetector based on 3D architect of MoS2-PANI hybrid structure for high photoresponsive properties
摘要： MoS2-PANI hybrid structure were synthesized by insitu polymerization of hydrothermally synthesized MoS2 nanosheets with PANI for its application in photodetectors. Field-Emission Scanning Electron Microscopy (FESEM), High-Resolution Transmission Electron Microscopy (HRTEM), X-Ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR) and UV-vis spectroscopy and were performed to characterize the synthesized sample. The optical sensor of MoS2-PANI nanosheets were fabricated and altogether studied using laser excitation wavelengths (λex): 635 nm (red), 785 nm (infra-red) and 1064 nm (near infra-red). The evaluated value of photoresponsivity of hybrid structure is quite high compared to the previously reported MoS2 nanosheets based optical sensor. At 785 nm, maximum photoresponsivity of 25 A/W is observed at fixed power density of 1.4 mW/mm2. The photoresponsive characteristics of MoS2-PANI hybrid structure were examined as a function of optical power density.
关键词： Photoresponsivity.,MoS2-PANI,Hydrothermal
更新于2025-11-21 11:01:37
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MoS2/silicon-on-insulator Heterojunction Field-Effect-Transistor for High-performance Photodetection
摘要： In this letter, we demonstrate a novel junction field effect transistor (JFET) by transferring MoS2 onto silicon-on-insulator (SOI) substrate to control the thin Si channel. By combining high light absorption coefficient in MoS2 with high internal gain in thin Si channel, the device can be used for photodetection and achieve high responsivity up to ~1.78×104 A/W, high detectivity over 3×1013 Jones, and short response time down to 1.44 ms. Furthermore, unlike conventional SOI photodetector which is only sensitive to UV light, the response spectrum of our proposed device peaks in visible/near-infrared region, which is interesting for imaging and optical communication applications.
关键词： SOI,High photoresponsivity,Van der Waals heterojunction,MoS2,Junction field effect transistor
更新于2025-09-23 15:22:29
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High-Performance p-BP/n-PdSe2 Near-Infrared Photodiode with Fast and Gate-Tunable Photoresponse
摘要： Van der Waals heterostructures composed of transition metal dichalcogenide (TMDs) materials have become a remarkable compact system that could offer an innovative architecture for advanced engineering in high-performance energy-harvesting and optoelectronic devices. Here, we report a novel van der Waals (vdW) TMDs heterojunction photo-diode composed of black phosphorus (p-BP) and palladium diselenide (n-PdSe2) which establish a high and tunable rectification and photoresponsivity. A high rectification up to ≈ 7.1 × 105 is achieved which is successfully tuned by employing the back gate voltage to the heterostructure devices. Besides, the device significantly shows the high and gate-controlled photoresponsivity of ?? = 9.6 × 105 ?? ?? ―1, 4.53 × 105 ???? ―1 and 1.63 × 105 ???? ―1 under the influence of light of different wavelengths (?? = 532, 1064 and 1310 nm) in visible and near-infrared regions respectively due to interlayer optical transition and low Schottky. The device also demonstrates extraordinary values of detectivity (?? = 5.8 × 1013 Jones) and external quantum efficiency (?????? ≈ 9.4 × 106), which are an order of magnitude higher than the currently reported values. The effective enhancement of photovoltaic characteristics in visible and infrared regions of this TMDs heterostructure based system has a huge potential in the field of optoelectronics to realize high-performance infrared photodetectors.
关键词： rectification,palladium diselenide,detectivity,photoresponsivity,transition metal dichalcogenide materials,near-infrared
更新于2025-09-23 15:21:01
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Wafer-Scale Fabrication of 2D PtS <sub/>2</sub> /PtSe <sub/>2</sub> Heterojunctions for Efficient and Broadband Photodetection
摘要： The fabrication of van der Waals heterostructures have mainly extends to two-dimensional materials that are exfoliated from their bulk counterparts, which is greatly limited by high-volume manufacturing. Here, we demonstrate multilayered PtS2/PtSe2 heterojunctions covering a large area on SiO2/Si substrate with a maximum size of 2" in diameter, offering throughputs that can meet the practical application demand. Theoretical simulation was carried out to understand the electronic properties of the PtS2/PtSe2 heterojunctions. Zero-bias photoresponse in the heterojunctions is observed under laser illumination of different wavelengths (405 to 2200 nm). The PtS2/PtSe2 heterojunctions exhibit broadband photoresponse, high quantum efficiency at infrared wavelengths with lower bounds for the external quantum efficiencies (EQE) being 1.2% at 1064 nm, 0.2% at 1550 nm and 0.05% at 2200 nm, and also relatively fast response time at the dozens of millisecond level. The large area, broadband 2D heterojunction photodetector demonstrated in this work further corroborating the great potential of 2D materials in the future low-energy optoelectronics.
关键词： van der Waals heterostructures,self-driving operation,quantum efficiency,broadband photodetection,photoresponsivity,wafer-scale fabrication
更新于2025-09-23 15:21:01
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Phasea??Controlled Synthesis of Monolayer W <sub/>1a??</sub><i> <sub/>x</sub></i> Re <i> <sub/>x</sub></i> S <sub/>2</sub> Alloy with Improved Photoresponse Performance
摘要： Tuning bandgap and phases in the ternary 2D transition metal dichalcogenides (TMDs) alloys has opened up unexpected opportunities to engineer optoelectronic properties and explore potential applications. In this work, a salt-assisted chemical deposition vapor (CVD) growth strategy is reported for the creation of high-quality monolayer W1?xRexS2 alloys to fulfill a readily phase control from 1H to DT by changing the ratio of Re and W precursors. The structures and chemical compositions of doping alloys are confirmed by combining atomic resolution scanning transmission electron microscopy-annular dark field imaging with energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy, matching well with the calculated results. The field-effect transistors (FETs) devices fabricated based on 1H-W0.9Re0.1S2 monolayer exhibit a n-type semiconducting behavior with the mobility of 0.4 cm2 V?1 s?1. More importantly, the FETs show high-performance responsivity with a value of 17 μA W?1 in air, which is superior to that of monolayer CVD-grown WS2. This work paves the way toward synthesizing monolayer ternary alloys with controlled phases for potential optoelectronic applications.
关键词： W1?xRexS2 alloys,phase transition,ternary TMDs,chemical vapor deposition,photoresponsivity
更新于2025-09-23 15:19:57
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Dip coated TiO2 based metal-semiconductor-metal ultraviolet photodetector for UV A monitoring
摘要： Metal-Semiconductor-Metal ultraviolet photodetector was fabricated by painting silver contacts on dip coated TiO2 thin films. The number of deposition cycles have influence on physiochemical properties and UV sensing properties. The UV photodetector properties were studied by illuminating devices with light intensity of 1.8 μW/cm2 and 5 V bias. The fabricated devices show ohmic I–V characteristics. The maximum photocurrent of 0.64 μA is obtained at 365 nm for film deposited at 8 cycles. The highest photoresponsivity obtained for C8 sample under UV illumination of 365 nm is 2.15 A/W at 5 V bias. The fast rise and fall times obtained for fabricated device are 17 s and 19 s. The optical switching characteristics show good reproducibility and stability.
关键词： Photoresponsivity,Dip coating,MSM UV photodetector,Titanium dioxide
更新于2025-09-23 15:19:57
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NIR polymers and phototransistors
摘要： A novel bisthiophene-fused diketopyrrolopyrrole unit (4,11-bis(2-octyldodecyl)-7H,14H-thieno[30,20:7,8]indolizino[2,1-a]thieno[3,2-g]indolizine-7,14-dione, BTI) has been designed as an electron acceptor and used to copolymerize with thiophene and bithiophene as electron donors to construct two D–A conjugated polymers, P1 and P2 via Stille coupling, respectively. The two polymers showed excellent thermal stability, broad light absorption and a narrow energy band gap. P1 and P2 were used to fabricate organic field-effect transistors (OFETs) to evaluate their charge transport characteristics. P2 showed much better hole transport performance with a mobility of 0.1 cm2 V?1 s?1. Near-infrared (NIR) phototransistors were also fabricated by using the two polymers blended with PC71BM as the active layer. With illumination of 35 mW cm?2 at a wavelength of 850 nm, the photocurrent/dark-current ratio (P) and photoresponsivity (R) of the phototransistor based on P1/PC71BM were 3.6 × 104 and 270 A W?1, respectively. For P2/PC71BM, P was 2.5 × 104 and R reached 2420 A W?1.
关键词： phototransistors,photoresponsivity,organic field-effect transistors,diketopyrrolopyrrole,NIR polymers,charge transport
更新于2025-09-19 17:15:36
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Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors
摘要： In this study, indium gallium zinc oxide (InGaZnO [IGZO]) active layer capped with an ultrathin p-type stannous oxide (SnO) is demonstrated to be a thin film transistor (TFT) for color scanning and photosensing device applications. Typically, the sole IGZO-based TFT is blind to visible light and hard to be developed for visible light sensing. The combination of IGZO and SnO layers can extend the light detection spectrum into visible light wavelengths and ameliorate the photosensing characteristics. The optical responsivity and signal to noise ratio can even be enhanced from 1.05 × 10?2 to 398.02 A W?1 and from 2.1 × 101 to 6.8 × 105 with at least four orders of magnitude, respectively. With the detailed material analysis and physical model discussed, it suggests that the large amount of additional light-excited carrier generated in the capping layer is the key factor for the significant improvement. Furthermore, the phenomenon of persistent photoconductivity can be effectively suppressed by its natural recombination under the heterojunction structure without applying charge-pumping method. The electrical uniformity of the sensor device is also highly potential for the next-generation displays integrating the photosensing functions.
关键词： detection spectrum,thin film transistors,in-cell photosensors,ultrathin light-absorbing layers,photoresponsivity
更新于2025-09-19 17:15:36
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Hydrothermally-Grown TiO2 Thin Film-Based Metal–Semiconductor–Metal UV Photodetector
摘要： A metal–semiconductor–metal (MSM) ultraviolet photodetector has been fabricated by using hydrothermally-grown TiO2 thin films. Ag paint was used as a contact electrode which showed the good ohmic contact between the metal–semiconductor junctions. The effect of deposition time on the structural, morphological and photodetector properties have been studied. The prepared TiO2 thin films are polycrystalline and show a rutile crystal structure with the preferred orientation along the (110) plane. The MSM UV photodetector was illuminated under a UV lamp with an intensity of 1.8 lW/cm2 and at 5-V bias. The photocurrent of the device increased linearly with the applied voltage. The maximum photocurrent of 3.96 lA was obtained for the film deposited at 5 h and maximum spectral photoresponsivity was 13.29 A/W. The device showed a fast optical switching behavior. The high responsivity and fast photoresponse shows that fabricated TiO2 detectors are good candidates for ultraviolet photodetectors.
关键词： MSM UV photodetector,Titanium dioxide,photoresponsivity,hydrothermal method
更新于2025-09-19 17:13:59
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High‐Performance Flexible Broadband Photodetectors Based on 2D Hafnium Selenosulfide Nanosheets
摘要： 2D transition-metal dichalcogenides have attracted significant interest in recent years due to their multiple degrees of freedom, allowing for tuning their physical properties via band engineering and dimensionality adjustment. The study of ternary 2D hafnium selenosulfide HfSSe (HSS) high-quality single crystals grown with the chemical vapor transport (CVT) technique is reported. An as-grown HSS single crystal exhibits excellent phototransistor performance from the visible to the near-infrared with outstanding stability. A giant photoresponsivity (≈6.4 × 104 A W?1 at 488 nm) and high specific detectivity (≈1014 Jones) are exhibited by a device fabricated by exfoliating single-crystal HSS of nano-thickness on a rigid Si/SiO2 substrate. The application of HSS single crystal is extended to yield a sensible flexible photodetector of photoresponsivity up to ≈1.3 A W?1 at 980 nm. The photoresponsivity of CVT-grown HSS single crystal is significantly larger than those fabricated with other existing Hf-based chalcogenides. The results suggest that the layered multi-elemental 2D chalcogenide single crystals hold great promise for future wearable electronics and integrated optoelectronic circuits.
关键词： crystal growth,photoresponsivity,transition metal dichalcogenides,flexible optoelectronics,specific detectivity
更新于2025-09-19 17:13:59