[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Impact of SiC MOSFET on PV Inverter

摘要： This paper investigates the possibility of improving power density of three-phase grid inverter by adopting SiC MOSFET. Static and dynamic characteristics of trench gate SiC MOSFET, planar gate SiC MOSFET and Si IGBT are compared. The efficiency performance of planar gate SiC MOSFET inverter, trench gate SiC MOSFET inverter and Si IGBT inverter are estimated and compared with increased switching frequency. Finally, these results are verified with 10 kW inverter prototypes.