研究目的
Investigating the possibility of improving power density of three-phase grid inverter by adopting SiC MOSFET.
研究成果
The rated power efficiency advantage of planar SiC inverter over Si IGBT inverter increases with switching frequency, attributed to lower switching loss of planar gate SiC MOSFET. Trench SiC inverter shows efficiency advantage over planar SiC inverter due to lower on-state resistance. Efficiency Stiffness of Si IGBT inverter is worse than SiC inverters. Power densities of SiC inverters can be enhanced with higher switching frequency.
研究不足
Further study is needed on how power device types and their switching frequencies will affect DC side capacitors and EMI filter size.
1：Experimental Design and Method Selection:
The study compares static and dynamic characteristics of trench gate SiC MOSFET, planar gate SiC MOSFET, and Si IGBT. Efficiency performance of inverters using these devices is estimated and compared with increased switching frequencies.
2：Sample Selection and Data Sources:
Three 10 kW PV inverter prototypes (trench SiC inverter, planar SiC inverter, and Si IGBT inverter) are built and tested.
3：List of Experimental Equipment and Materials:
Includes 1200V/35A planar gate SiC MOSFET half bridge module, 1200V/50A trench gate SiC MOSFET half bridge module from FUJI Electric, and 1200V/40A Si IGBT IKW40N120H3 from Infineon.
4：Experimental Procedures and Operational Workflow:
Efficiency measurement testbed setup includes DC input emulated by three-phase grid, voltage regulator, isolation transformer, and diode rectifier. The AC output of the tested PV inverter is connected to grid. Power analyzer PM6000 from Voltech is used for measurements.
5：Data Analysis Methods:
Efficiency curves and loss distributions are analyzed under various switching frequencies.
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