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Interfacial Contact is Required for Metal-Assisted Plasma Etching of Silicon
摘要： For decades, fabrication of semiconductor devices has utilized well-established etching techniques to create complex nanostructures in silicon. The most common dry process is reactive ion etching which fabricates nanostructures through the selective removal of unmasked silicon. Generalized enhancements of etching have been reported with mask-enhanced etching with Al, Cr, Cu, and Ag masks, but there is a lack of reports exploring the ability of metallic films to catalytically enhance the local etching of silicon in plasmas. Here, metal-assisted plasma etching (MAPE) is performed using patterned nanometers-thick gold films to catalyze the etching of silicon in an SF6/O2 mixed plasma, selectively increasing the rate of etching by over 1000%. The catalytic enhancement of etching requires direct Si-metal interfacial contact, similar to metal-assisted chemical etching (MACE), but is different in terms of the etching mechanism. The mechanism of MAPE is explored by characterizing the degree of enhancement as a function of Au catalyst configuration and relative oxygen feed concentration, along with the catalytic activities of other common MACE metals including Ag, Pt, and Cu.
关键词： nanofabrication,MACE,silicon processing,reactive ion etching,metal assisted etching
更新于2025-09-23 15:23:52
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Resonance reflection of light by ordered silicon nanopillar arrays with the vertical p-n junction
摘要： Silicon nanopillar (Si NP) arrays with the axial p-n junction were formed and investigated. A method to fabricate Si NP ordered arrays by means of electron beam lithography using the negative electron resist and reactive ion etching is presented. The effect of strong resonance light scattering – change of the color of separate Si NPs - was demonstrated. One or several minima were registered in the measured reflection spectra. Thereat, the position of reflection minimum was changed with a change in Si NP diameter. A shift of the minimum position towards the longer wavelength spectral region with an increase in Si NP diameter was observed. A shift of the position of minima to the shorter wavelength spectral region with a decrease in Si NP pitch in microarrays with the same Si NP diameter was observed. The quantitative divergence in the position of reflection minima in Si NPs with calculated dependencies for Mie resonances was found. High photosensitivity of Si NP arrays with axial p-n junction to visible and near IR light was discovered. So, these structures may be used for selective photonic sensors.
关键词： reflectance spectra,silicon nanopillars,electrophysical properties,reactive ion etching,electron beam lithography
更新于2025-09-23 15:23:52
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Process for fabricating microactuator membranes of piezoelectric inkjet print head using multi-step deep reactive ion etching process
摘要： As part of an effort to develop piezoelectric inkjet print head (PIPH), a process for fabricating its Si-cups and actuator membranes of multi-layered structures was investigated. The manufacture of this device was enabled by the use of deep reactive ion etching (DRIE). Based on that, multi-step DRIE process was proposed to etch the multi-layered actuator membranes on silicon on insulator wafers. Due to the appropriate parameters of the etching process, undesirable effects, such as Si grasses, notching effect of Si-cups and the bowing formation on the sidewalls, were also avoided. The way to eliminate the over-etching of SiO2 membranes by controlling the appropriate platen power and process duration simultaneously was also presented. High quality PIPH actuator membranes were ?nally obtained, making great contributes to the successful inkjet test.
关键词： multi-layered actuator membranes,deep reactive ion etching,piezoelectric inkjet print head,silicon on insulator wafers,over-etching
更新于2025-09-23 15:21:21
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Silicon Nitride MOMS Oscillator for Room Temperature Quantum Optomechanics
摘要： Optomechanical SiN nano-oscillators in high-finesse Fabry–Perot cavities can be used to investigate the interaction between mechanical and optical degree of freedom for ultra-sensitive metrology and fundamental quantum mechanical studies. In this paper, we present a nano-oscillator made of a high-stress round-shaped SiN membrane with an integrated on-chip 3-D acoustic shield properly designed to reduce mechanical losses. This oscillator works in the range of 200 kHz to 5 MHz and features a mechanical quality factor of Q ≈ 107 and a Q-frequency product in excess of 6.2 × 1012 Hz at room temperature, fulfilling the minimum requirement for quantum ground-state cooling of the oscillator in an optomechanical cavity. The device is obtained by MEMS deep reactive-ion etching (DRIE) bulk micromachining with a two-side silicon processing on a silicon-on-insulator wafer. The microfabrication process is quite flexible such that additional layers could be deposited over the SiN membrane before the DRIE steps, if required for a sensing application. Therefore, such oscillator is a promising candidate for quantum sensing applications in the context of the emerging field of quantum technologies.
关键词： reactive ion etching,MOMS oscillator,quantum optomechanics,SiN thin membrane
更新于2025-09-23 15:21:21
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Reactive ion etching of single crystal diamond by inductively coupled plasma: State of the art and catalog of recipes
摘要： Significant technology advances in the growth of single crystal diamond (SCD) have over the past decade led to commercial offerings of high quality SCD substrates, typically available in the form of well specified plates of several square millimeters in size [1]. At the same time, the cost of such plates has considerably decreased [2], which has triggered important research and development efforts aiming to exploit the exceptional optical [3], thermal [4] and mechanical properties [5] of SCD for a variety of applications in electronics [6], photonics [7–10], optics and opto-mechanics [11] and quantum technologies [12].
关键词： Single Crystal Diamond,State of the Art,Reactive Ion Etching,Catalog of Recipes,Inductively Coupled Plasma
更新于2025-09-23 15:21:01
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Micro‐/Nanopillars for Micro‐ and Nanotechnologies Using Inductively Coupled Plasmas
摘要： Herein, the plasma etching mask transfer of the resistance of e-beam resists, both negative and positive, as well as nanoparticle masks and hard masks are investigated. Various microscale and nanoscale features are exposed under plasma etching chemistries and are examined through both Bosch and pseudo-Bosch processes using an inductive-coupled plasma-deep reactive ion etching (ICP-DRIE) system. The selection of masks transfer proposed in this work provides better flexibility and cost-effective processing. The etch profile depending on plasma etching process and feature size is studied and highlighted. In particular, nanopillars are etched to a length of 10 μm and a diameter of 280 nm with a good aspect ratio (>30) yielding a selectivity of better than 100:1 and a satisfactory vertical profile.
关键词： plasma etching,micropillars,high aspect ratio,inductive-coupled plasma-deep reactive ion etching,nanopillars,selectivity
更新于2025-09-19 17:13:59
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An Investigation of Processes for Glass Micromachining
摘要： This paper presents processes for glass micromachining, including sandblast, wet etching, reactive ion etching (RIE), and glass reflow techniques. The advantages as well as disadvantages of each method are presented and discussed in light of the experiments. Sandblast and wet etching techniques are simple processes but face difficulties in small and high-aspect-ratio structures. A sandblasted 2 cm × 2 cm Tempax glass wafer with an etching depth of approximately 150 μm is demonstrated. The Tempax glass structure with an etching depth and sides of approximately 20 μm was observed via the wet etching process. The most important aspect of this work was to develop RIE and glass reflow techniques. The current challenges of these methods are addressed here. Deep Tempax glass pillars having a smooth surface, vertical shapes, and a high aspect ratio of 10 with 1-μm-diameter glass pillars, a 2-μm pitch, and a 10-μm etched depth were achieved via the RIE technique. Through-silicon wafer interconnects, embedded inside the Tempax glass, are successfully demonstrated via the glass reflow technique. Glass reflow into large cavities (larger than 100 μm), a micro-trench (0.8-μm wide trench), and a micro-capillary (1-μm diameter) are investigated. An additional optimization of process flow was performed for glass penetration into micro-scale patterns.
关键词： reactive ion etching,wet etching,sandblast,glass reflow process,glass micromachining
更新于2025-09-10 09:29:36
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Pancharatnam–Berry Optical Elements for Spin and Orbital Angular Momentum Division Demultiplexing
摘要： A Pancharatnam–Berry optical element is designed, fabricated, and optically characterized for the demultiplexing of beams with different polarization and orbital angular momentum states at the telecom wavelength of 1310 nm. The geometric phase control is achieved by fabricating properly-oriented subwavelength gratings on a silicon substrate, inducing a spatially-variant form birefringence. The digital grating pattern is transferred to the silicon substrate with a two-step nanofabrication protocol, using inductively coupled plasma reactive ion etching to transfer the resist pattern generated with high-resolution electron beam lithography. The optical characterization of the sample confirms the expected capability to sort circularly polarized optical beams with different handedness and orbital angular momentum. Encompassing optical element design and silicon photonics, the designed silicon metasurface paves the way to innovative devices for total angular momentum mode division multiplexing with unprecedented levels of integration.
关键词： subwavelength gratings,electron beam lithography,metasurfaces,silicon,orbital angular momentum,reactive ion etching,mode division multiplexing,polarization division multiplexing,Pancharatnam–Berry optical elements
更新于2025-09-10 09:29:36
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Gallium Oxide || Dry etching of Ga2O3
摘要： There is generally a need to pattern Ga2O3 when fabricating devices such as UV solar blind photodetectors, various types of transistors, as well as sensors [1, 2]. The patterning is carried out by etching the semiconductor, using dielectric or photoresist masks to protect the active areas. There are two basic classes of etch processes, those carried out in the liquid phase (known as wet etching) and those performed in the gas phase (called dry etching, especially when a plasma is used to provide the reactive species for etching) [3]. Etch processes may be classified by their rate, selectivity, uniformity, directionality (isotropy or anisotropy), surface quality, and reproducibility [3]. All etching processes involve three basic events: (i) movement of the etching species to the surface to be etched, (ii) chemical reaction to form a compound that is soluble in the surrounding medium, and (iii) movement of the by-products away from the etched region, allowing fresh etchant to reach the surface. Both (i) and (iii) usually are referred to as diffusion, although convection may be present. The slowest of these processes primarily determines the etch rate, which may be diffusion or chemical-reaction limited.
关键词： reactive ion etching,inductively coupled plasma,Ga2O3,plasma etching,dry etching
更新于2025-09-09 09:28:46
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STRUCTURING OF DIAMOND FILMS USING MICROSPHERE LITHOGRAPHY
摘要： In this study, the structuring of micro- and nanocrystalline diamond thin films is demonstrated. The diamond films are structured using the technique of microsphere lithography followed by reactive ion etching. Specifically, this paper presents a four-step fabrication process: diamond deposition (microwave plasma assisted chemical vapor deposition), mask preparation (by the standard Langmuir-Blodgett method), mask modification and diamond etching. A self-assembled monolayer of monodisperse polystyrene (PS) microspheres with close-packed ordering is used as the primary template. Then the PS microspheres and the diamond films are processed in capacitively coupled radiofrequency plasma using various plasma chemistries. This fabrication method illustrates the preparation of large arrays of periodic and homogeneous hillock-like structures. The surface morphology of the processed diamond films is characterized by scanning electron microscopy and with the use of an atomic force microscope. The potential applications of these diamond structures in various fields of nanotechnology are also briefly discussed.
关键词： polystyrene microspheres,nanostructuring,scanning electron microscopy,reactive ion etching,diamond thin films
更新于2025-09-09 09:28:46